Showing items 1051-1075 of 2347236 (93890 Page(s) Totally)
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| 淡江大學 |
1997-11-29 |
1.2V low-power dynamic complementary-pass-transistor logic
|
鄭國興; Cheng, Kuo-hsing; Chen, Jian-hung |
| 國立交通大學 |
2014-12-08T15:19:21Z |
1.2V sub-nanoampere A/D converter
|
Rachmuth, G; Yang, YS; Poon, CS |
| 國立虎尾科技大學 |
2011 |
1.2伏特十位元低功率連續逼近式類比數位轉換器
|
陳俊甫 |
| 國立虎尾科技大學 |
2015 |
1.2伏特十位元連續逼近式類比數位轉換器設計與製作
|
陳得勤 |
| 國立臺灣大學 |
2004-02 |
1.3 /spl mu/m GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy
|
Liu, P.W.; Liao, G.H.; Lin, H.H. |
| 國立臺灣大學 |
2003-10 |
1.3 /spl mu/m ln(Ga)As/GaAs quantum-dot lasers and their dynamic properties
|
Mao, M.H.; Wu, T.Y.; Chang, F.Y.; Lin, H.H. |
| 國立東華大學 |
2003-09 |
1.3 micron single lateral mode lasers based on InAs QDs and InGaAsN quantum wells
|
祁錦雲; Jim-Yong Chi; A.R.Kovsh; D.A.Livshits; N.A.Maleev; A.E.Zhukov; V.M.Ustinov; J.S.Wang; R.S.Hsiao; G.Lin; J.Y.Chi; N.N.Ledentsov |
| 國立中山大學 |
1988 |
1.3 mm Cobalt-Doped Current Blocking Layers Grown by MOCVD
|
W.H. Cheng;J. Pooladdej;S.Y. Huang;K.D. Buehring;A. Appelbaum;D. Wolf;D. Renner |
| 國立中山大學 |
1992-07 |
1.3 mm InGaAsP Fabry-Perot Lasers with Reduced Pulse Jitter and Power Penalty
|
W.H. Cheng; J.M. Dugan;J.C. Miller; D. Renner;T.C. McDermott; C.B. Su |
| 國立成功大學 |
2004-07-25 |
1.3 mu m InAs quantum dot resonant cavity light emitting diodes
|
Su, Yan-Kuin; Yu, H. C.; Chang, Shoou-Jinn; Lee, C. T.; Wang, J. S.; Kovsh, A. R.; Wu, Y. T.; Lin, K. F.; Huang, C. Y. |
| 國立交通大學 |
2014-12-08T15:18:11Z |
1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection
|
Peng, PC; Chang, YH; Kuo, HC; Tsai, WK; Lin, G; Lin, CT; Yu, HC; Yang, HP; Hsiao, RS; Lin, KF; Chi, JY; Chi, S; Wang, SC |
| 國立成功大學 |
2009 |
1.3 mu m Strain-Compensated InGaAsP Planar Buried Heterostructure Laser Diodes with a TO-Can Package for Optical Fiber Communications
|
Tsai, Chia-Lung; Chou, Yi-Lun; Wang, Y. S.; Chang, Shoou-Jinn; Wu, Meng-Chyi; Lin, W. |
| 國立虎尾科技大學 |
2007 |
1.3 μm Ga0.11In0.89As0.24P0.76/Ga0.27In0.73As0.67P0.33 compressive-strain multiple quantum well with n-type modulation-doped GaInP intermediate-barrier laser diodes
|
Lei, Po-Hsun |
| 國立臺灣大學 |
2004-02-05 |
1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy
|
Liu, P.W.; Liao, G.H.; Lin, H.H. |
| 國立臺灣大學 |
2004 |
1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy
|
Liu, P.-W.; Liao, G.-H.; Lin, H.-H. |
| 臺大學術典藏 |
2018-09-10T04:33:07Z |
1.3 μm In(Ga)As/GaAs quantum-dot lasers and their dynamic properties
|
Mao, M.-H.; Wu, T.-Y.; Chang, F.-Y.; Lin, H.-H.; MING-HUA MAO |
| 國立東華大學 |
2003-12 |
1.3 μm InAs-InGaAs quantum dot VCSELs on GaAs substrates with all-semiconductor DBRs
|
祁錦雲; Jim-Yong Chi; J. S. Wang; N. A. Maleev; A. R. Kovsh; R. S. Hsiao; C. M. Lai; L. Wei; J. F. Chen; J. A. Lott; N. N. Ledentsov; V. M. Ustinov; J. Y. Chi |
| 國立東華大學 |
2005 |
1.3 μm Quantum Dot Vertical Cavity Surface Emitting Laser with External Light Injection
|
祁錦雲; Jim-Yong Chi; P. C. Peng; Y. H. Chang; H. C. Kuo; W. K. Tsai; Gray Lin;C. T. Lin; H. C. Yu; H. P. Yang; R. S. Hsiao; K. F. Lin;S. Chi; S. C. Wang |
| 國立東華大學 |
2003-12 |
1.3 m InGaAsN Edge Emitting Lasers with Near-Circular Beam Divergence
|
祁錦雲; Jim-Yong Chi; G. Lin; I. F. Chen;J. S. Wang; R. S. Hsiao; L. Wei;J. Y. Chi; D. A. Livshits; A. R. Kovsh;V. M. Ustinov |
| 國立東華大學 |
2002-12 |
1.3 m lasers based on InAs/GaAs quantum dots with high optical gain
|
祁錦雲; Jim-Yong Chi; R. Kovsh; N. A. Maleev; A. E. Zhukov; S. S. Mikhrin; D. A. Livshits; Y. M. Shernyakov; A . 11 V. Sakharov; M. V. Maximov; V. M. Ustinov; Zh. I. Alferov; J. S. Wang; R. S. Shiao; L. Wei; Y. T. Wu; G. Lin; J. Y. Chi; N. N. Ledentsov; D. Bimberg |
| 元智大學 |
2006-11 |
1.3-mu m amplifier-free all-optical 2R regenerator using two-mode injection-locked distributed feedback laser diode
|
祁甡; Chien HC; Lee CC |
| 國立交通大學 |
2014-12-08T15:17:42Z |
1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
|
Yu, HC; Wang, JS; Su, YK; Chang, SJ; Lai, FI; Chang, YH; Kuo, HC; Sung, CP; Yang, HPD; Lin, KF; Wang, JM; Chi, JY; Hsiao, RS; Mikhrin, S |
| 國立成功大學 |
2006-01 |
1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
|
Yu, H. C.; Wang, J. S.; Su, Yan-Kuin; Chang, Shoou-Jinn; Lai, Fang-I; Chang, Ya-Hsien; Kuo, Hao-Chung; Sung, C. P.; Yang, Hung-Pin D.; Lin, K. F.; Wang, J. M.; Chi, Jim-Yong; Hsiao, R. S.; Mikhrin, S. |
| 國立成功大學 |
2012-06 |
1.3-mu m InGaAsP planar buried heterostructure laser diodes with AllnAs electron stopper layer
|
Tsai, Chia-Lung; Yen, Chih-Ta; Chou, Cheng-Yi; Chang, S. J.; Wu, Meng-Chyi |
| 國立東華大學 |
2006 |
1.3-um InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
|
祁錦雲; Jim-Yong Chi; Yu, H.C.; Wang, J.S.; Su, Y.K.; Chang, S.J.; Lai, F.I.; Chang, Y.H.; Kuo, H.C.; Sung, C.P.; Yang, H.P.D.; Lin, K.F.; Wang, J.M.; Hsiao, R.S.; Mikhrin, S. |
Showing items 1051-1075 of 2347236 (93890 Page(s) Totally)
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