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Showing items 227646-227670 of 2348617 (93945 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:28:27Z |
Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
|
Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Chang, Geng-Wei; Liu, Guan-Ru; Chen, Min-Chen; Huang, Hui-Chun; Liu, Shih-Kun; Tai, Ya-Hsiang; Gan, Der-Shin; Yang, Ya-Liang; Young, Tai-Fa; Tseng, Bae-Heng; Chen, Kai-Huang; Tsai, Ming-Jinn; Ye, Cong; Wang, Hao; Sze, Simon M. |
| 國立成功大學 |
2012-12 |
Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
|
Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Chang, Geng-Wei; Liu, Guan-Ru; Chen, Min-Chen; Huang, Hui-Chun; Liu, Shih-Kun; Tai, Ya-Hsiang; Gan, Der-Shin; Yang, Ya-Liang; Young, Tai-Fa; Tseng, Bae-Heng; Chen, Kai-Huang; Tsai, Ming-Jinn; Ye, Cong; Wang, Hao; Sze, Simon M. |
| 國立成功大學 |
2016-09 |
Bipolar Resistive Switching Behavior in Sol-Gel MgTiNiOx Memory Device
|
Chang, Yu-Chi; Lee, Ke-Jing; Lee, Cheng-Jung; Wang, Li-Wen; Wang, Yeong-Her |
| 國立成功大學 |
2018 |
Bipolar Resistive Switching Characteristics in Flexible Pt/MZT/Al Memory and Ni/NbO2/Ni Selector Structure
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Lee;Ke-Jing;Chang;Yu-Chi;Lee;Cheng-Jung;Wang;Li-Wen;Wang;Yeong-Her |
| 國立東華大學 |
2007-11 |
Bipolar resistive switching characteristics in SrZrO3-based films for RRAM applications
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林群傑; Lin, Chun-Chieh; Lin, Chih-Yang ; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:24:05Z |
Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications
|
Fan, Yang-Shun; Liu, Po-Tsun; Teng, Li-Feng; Hsu, Ching-Hui |
| 國立交通大學 |
2014-12-08T15:28:06Z |
Bipolar resistive switching characteristics of Gd2O3 thin film structure
|
Chang, K. M.; Tzeng, W. H.; Liu, K. C.; Chan, Y. C.; Kuo, C. C. |
| 義守大學 |
2011-05 |
Bipolar resistive switching characteristics of Gd2O3 thin film structure
|
Kow-Ming Chang;Wen-Hsien Tzeng;Kou-Chen Liu;Yi-Chun Chan;Chun-Chih Kuo |
| 國立成功大學 |
2016 |
Bipolar Resistive Switching Characteristics of TaO2 RRAM
|
Hsieh, Wei-Kang; Chang, Shoou-Jinn |
| 國立交通大學 |
2014-12-08T15:07:53Z |
Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory
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Chen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chen, Shih-Ching; Hu, Chih-Wei; Tsai, Chih-Tsung; Sze, Simon M. |
| 國立交通大學 |
2019-10-05T00:08:42Z |
Bipolar resistive switching characteristics of tungsten-doped indium-zinc oxide conductive-bridging random access memory
|
Gan, Kai-Jhih; Liu, Po-Tsun; Lin, Sheng-Jie; Ruan, Dun-Bao; Chien, Ta-Chun; Chiu, Yu-Chuan; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:43:58Z |
Bipolar resistive switching effect in Gd(2)O(3) films for transparent memory application
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Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih |
| 義守大學 |
2011-07 |
Bipolar resistive switching effect in Gd2O3 films for transparent memory application
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Kou-Chen Liu;Wen-Hsien Tzeng;Kow-Ming Chang;Yi-Chun Chan;Chun-Chih Kuo |
| 國立交通大學 |
2019-04-02T05:59:00Z |
Bipolar resistive switching effect in Gd2O3 films for transparent memory application
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Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih |
| 國立臺灣科技大學 |
2014 |
Bipolar resistive switching in transparent AZO/SiOx/ITO devices
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Yang, P.-J.;Jou, S.;Chiu, C.-C. |
| 國立交通大學 |
2014-12-08T15:29:28Z |
Bipolar resistive switching of chromium oxide for resistive random access memory
|
Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Shih-Yang; Chen, Chi-Wen; Chen, Shih-Ching; Sze, S. M.; Tsai, Ming-Jinn; Kao, Ming-Jer; Huang, Fon-Shan Yeh |
| 臺大學術典藏 |
2007-06 |
Bipolar spin switch using Aharonov-Bohm ring with embedded double quantum dots
|
Chen, Kuo-Wei; Liu, Ming-Hao; Chen, Son-Hsien; Chang, Ching-Ray; Chen, Kuo-Wei; Liu, Ming-Hao; Chen, Son-Hsien; Chang, Ching-Ray |
| 國立臺灣大學 |
2007-06 |
Bipolar spin switch using Aharonov-Bohm ring with embedded double quantum dots
|
Chen, Kuo-Wei; Liu, Ming-Hao; Chen, Son-Hsien; Chang, Ching-Ray |
| 國立交通大學 |
2014-12-08T15:29:30Z |
Bipolar switching characteristics of low-power Geo resistive memory
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Cheng, C. H.; Chen, P. C.; Liu, S. L.; Wu, T. L.; Hsu, H. H.; Chin, Albert; Yeh, F. S. |
| 南台科技大學 |
2017-05 |
Bipolar switching properties and electrical conduction mechanism of manganese oxide RRAM devices
|
Kai-Huang Chen; Ming-Cheng Kao; Shou-Jen Huang; Cheng-Ying Li; Chien-Min Cheng; Sean Wu; Zong-Hsun Wu |
| 朝陽科技大學 |
2025-12-26 |
Bipolar Switching Properties and Electrical Conduction Mechanism of Silicon Carbide Thin-film Resistive Random-access Memory Devices
|
Chen, Kai-Huang; Kao, Ming-Cheng; Wang, Yao-Chin; Chen, Hsin-Chin; Kao, Chin-Chueh Huang; 高銘政 |
| 朝陽科技大學 |
2025-04-14 |
Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices
|
Wang, Yao-Chin; Chen, Kai-Huang; Kao, Ming-Cheng; Chen, Hsin-Chin; Cheng, Chien-Min; Huang, Hong-Xiang; Huang, Kai-Chi; 高銘政 |
| 南台科技大學 |
2023-01 |
Bipolar Switching Properties of GdOx:SiO2 Thin Film Resistive Random Access Memory Using Co-Sputtering Technology
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Kai-Huang Chen;Chien-Min Cheng;Na-Fu Wang;Jia-Cheng Zhou;Mei-Li Chen |
| 南台科技大學 |
2023-02 |
Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories
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Kai-Huang Chen;Chien-Min Cheng;Mei-Li Chen;Yi-Yun Pan |
| 國立交通大學 |
2015-07-21T11:21:13Z |
Bipolar tri-state resistive switching characteristics in Ti/CeOx/Pt memory device
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Ismail, M.; Abbas, M. W.; Rana, A. M.; Talib, I.; Ahmed, E.; Nadeem, M. Y.; Tsai, T. L.; Chand, U.; Shah, N. A.; Hussain, M.; Aziz, A.; Bhatti, M. T. |
Showing items 227646-227670 of 2348617 (93945 Page(s) Totally)
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