| 大葉大學 |
2011 |
GaN Epilayer Grown on Ga2O3 Sacrificial Layer for Chemical Lift-Off Application
|
Wuu, Dong-Sing;Tsai, Tsung-Yen;Horng, Ray-Hua;Ou, Sin-Liang;Hung, Ming-Tsung;Hsueh, Hsu-Hung |
| 國立成功大學 |
2011-02 |
GaN Epitaxial Layers Prepared on Nano-Patterned Si(001) Substrate
|
Huang, C. C.; Chang, S. J.; Kuo, C. H.; Ko, C. H.; Wann, Clement H.; Cheng, Y. C.; Lin, W. J. |
| 國立臺灣科技大學 |
2013 |
GaN FET應用於高頻化錯相式降壓型功率因數修正器之研製
|
張家鏵 |
| 臺大學術典藏 |
2022-08-09T03:51:02Z |
GaN growth by nitrogen ECR-CVD method
|
Chen K.H.; Chao C.H.; Chuang T.J.; Yang Y.J.; Chen L.C.; Chen C.K.; Huang Y.F.; Yang C.H.; Lin H.Y.; Chang I.M.; Chen Y.F.; Chen K.H.; Chen L.C.; LI-CHYONG CHEN |
| 國立交通大學 |
2014-12-08T15:11:14Z |
GaN growth on Si(111) using simultaneous AlN/alpha-Si(3)N(4) buffer structure
|
Chang, Jet Rung; Yang, Tsung Hsi; Ku, Jui Tai; Shen, Shih Guo; Chen, Yi Cheng; Wong, Yuen Yee; Chang, Chun Yen |
| 國立交通大學 |
2019-04-02T06:01:07Z |
GaN growth on Si(111) using simultaneous AlN/alpha-Si3N4 buffer structure
|
Chang, Jet Rung; Yang, Tsung Hsi; Ku, Jui Tai; Shen, Shih Guo; Chen, Yi Cheng; Wong, Yuen Yee; Chang, Chun Yen |
| 國立交通大學 |
2014-12-16T06:15:27Z |
GaN HEMT with Nitrogen-Rich Tungsten Nitride Schottky Gate and Method of Forming the Same
|
Chang, Edward Yi; Lu, Chung-Yu |
| 國立交通大學 |
2014-12-12T01:36:05Z |
GaN HEMT 打線接合構裝技術之研究
|
戴光助; Tai, Kuang-Chu; 成維華; Chieng,Wei-Hua |
| 國立交通大學 |
2014-12-08T15:33:13Z |
GaN HEMTs Power Module Package Design and Performance Evaluation
|
Ho, Chung-Hsiang; Chou, Po-Chien; Cheng, Stone |
| 國立交通大學 |
2019-04-02T06:04:21Z |
GaN HEMTs Power Module Package Design and Performance Evaluation
|
Ho, Chung-Hsiang; Chou, Po-Chien; Cheng, Stone |
| 元智大學 |
2018-11-16 |
GaN HEMT射頻功率放大器快速雛型設計法及其在第五代行動通訊sub-6GHz微型基地台之應用
|
廖晟淯; 吳澤彥; 程冠潛; Chien-Chang Huang |
| 國立交通大學 |
2015-12-02T02:59:34Z |
GaN High-Electron-Mobility Transistor with WNx/Cu Gate for High-Power Applications
|
Hsieh, Ting-En; Lin, Yueh-Chin; Li, Fang-Ming; Shi, Wang-Cheng; Huang, Yu-Xiang; Lan, Wei-Cheng; Chin, Ping-Chieh; Chang, Edward Yi |
| 國立高雄師範大學 |
2009 |
GaN hydrogen sensor with a Pd-SiO2 mixture forming sensing nanoparticles
|
Jung-Hui Tsai;Shao-Yen ChiuHsuan-Wei HuangKun-Chieh LiangTze-Hsuan HuangKang-Ping LiuJung-Hui TsaiWen-Shiung Lour; 蔡榮輝 |
| 國立臺灣海洋大學 |
2009 |
GaN hydrogen sensor with a Pd-SiO2 mixture forming sensing nanoparticles
|
S. Y. Chiu;H. W. Huang;K. C. Liang;T. H. Huang;K. P. Liu;J. H. Tsai;W. S. Lour |
| 國立臺灣海洋大學 |
2009-02 |
GaN hydrogen sensor with Pd-SiO2 mixture forming sensing nanoparticles
|
S.Y. Chiu;H.W. Huang;K.C. Liang;T.H. Huang; K.P. Liu;J.H. Tsai;W.S. Lour |
| 南台科技大學 |
2018-06 |
GaN intermediate band solar cells with Mn-doped absorption layer
|
Ming-Lun Lee;Feng-Wen Huang;Po-Cheng Chen;Jinn-Kong Sheu |
| 國立成功大學 |
2018-06-5 |
GaN intermediate band solar cells with Mn-doped absorption layer
|
Lee;Ming-Lun;Huang;Feng-Wen;Chen;Po-Cheng;Sheu;Jinn-Kong |
| 國立交通大學 |
2016-03-28T00:04:28Z |
GaN Layers on Si (111) from Nanocolumns to Nanorods by Plasma-Assisted Molecular Beam Epitaxy
|
Yu, Ing-Song; Liang, Wen-Han; Yang, Dian-Long; Yang, Chung-Pei; Chang, Chun-Pu; Lin, Chun-Ting; Chen, Chun-Chi |
| 國立交通大學 |
2017-04-21T06:55:51Z |
GaN Layers on Si (111) from Nanocolumns to Nanorods by Plasma-Assisted Molecular Beam Epitaxy
|
Yu, Ing-Song; Liang, Wen-Han; Yang, Dian-Long; Yang, Chung-Pei; Chang, Chun-Pu; Lin, Chun-Ting; Chen, Chun-Chi |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN metal oxide semiconductor field effect transistors
|
Ren, F; Pearton, SJ; Abernathy, CR; Baca, A; Cheng, P; Shul, RJ; Chu, SNG; Hong, M; Schurman, MJ; Lothian, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:56Z |
GaN metal oxide semiconductor field effect transistors
|
Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Schurman, M.J.; Lothian, J.R.; MINGHWEI HONG |
| 南台科技大學 |
2003 |
GaN Metal Semiconductor Interface and Its Applications in GaN and InGaN Metal Semiconductor Metal Photodetectors
|
Y. Z. Chiou; Y. K. Su; S. J. Chang; C. H. Chen |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al 2 O 3 as a template followed by atomic layer deposition growth
|
Chang, YH;Chiu, HC;Chang, WH;Kwo, J;Tsai, CC;Hong, JM;Hong, M; Chang, YH; Chiu, HC; Chang, WH; Kwo, J; Tsai, CC; Hong, JM; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:37Z |
GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth
|
Chang, Y.H.;Chiu, H.C.;Chang, W.H.;Kwo, J.;Tsai, C.C.;Hong, J.M.;Hong, M.; Chang, Y.H.; Chiu, H.C.; Chang, W.H.; Kwo, J.; Tsai, C.C.; Hong, J.M.; Hong, M.; MINGHWEI HONG |
| 國立成功大學 |
2003-04 |
GaN metal-semiconductor interface and its applications in GaN and InGaN metal-semiconductor-metal photodetectors
|
Chiou, Yu-Zung; Su, Yan-Kuin; Chang, Shoou-Jinn; Chen, Chin-Hsiang |
