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| 國立臺灣科技大學 |
2010 |
Fully probabilistic framework for evaluating excavation-induced damage potential of adjacent buildings
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Juang C.H.; Schuster M.; Ou C.-Y; Phoon K.K. |
| 國立臺灣科技大學 |
2011 |
Fully Probabilistic Framework for Evaluating Excavation-Induced Damage Potential of Adjacent Buildings
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Juang, C.H.;Schuster, M.;Ou, C.Y.;Phoon, K.K. |
| 國立交通大學 |
2014-12-08T15:42:20Z |
Fully process-compatible layout design on bond pad to improve wire bond reliability in CMOS ICs
|
Ker, MD; Peng, JJ |
| 國立高雄應用科技大學 |
2012-01-03 |
Fully quantitative characterization of CMOS–MEMS polysilicon/titanium thermopile infrared sensors
|
Chung-Nan Chen |
| 國立交通大學 |
2014-12-08T15:33:39Z |
Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate
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Hsu, Hsiao-Hsuan; Chang, Chun-Yen; Cheng, Chun-Hu; Yu, Shu-Hung; Su, Ching-Yuan; Su, Chung-Yen |
| 國立交通大學 |
2014-12-08T15:40:03Z |
Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs
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Yu, DS; Wu, CH; Huang, CH; Chin, A; Chen, WJ; Zhu, CX; Li, MF; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:26:18Z |
Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs
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Huang, CH; Yu, DS; Chin, A; Wu, CH; Chen, WJ; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:40:57Z |
Fully silicided NiSi gate on La2O3 MOSFETs
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Lin, CY; Ma, MW; Chin, A; Yeo, YC; Zhu, CX; Li, MF; Kwong, DL |
| 國立成功大學 |
2019-07 |
Fully sintered alumina with a higher Vickers hardness prepared using a gel-casting process
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Lee;Kuo-Yang;Chen;Chih-Cheng;Hsiang;Hsing-I;Yen;Fu-Su;Huang;Chi-Yuen |
| 臺大學術典藏 |
2019-12-27T06:48:19Z |
Fully solution-processed, transparent organic power-generating polarizer
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Chou, W.-Y.; Hsu, F.-C.; Chen, Y.-F.; Chou, W.-Y.; YANG-FANG CHEN et al. |
顯示項目 439871-439880 / 2346788 (共234679頁)
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