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Institution	Date	Title	Author
國立成功大學	2008-04	GaN p-i-n photodetectors with an LT-GaN interlayer	Lin, J. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Lan, W. H.; Huang, K. C.; Chen, W. R.; Lan, C. H.; Huang, C. C.; Lin, W. J.; Cheng, Y. C.
國立成功大學	2002-12	GaN p-n junction diode formed by Si ion implantation into p-GaN	Lee, M. L.; Sheu, Jinn-Kong; Yeh, L. S.; Tsai, M. S.; Kao, C. J.; Tun, Chun-Ju; Chang, Shoou-Jinn; Chi, Gou-Chung
南台科技大學	2004	GaN Photodetectors with Transparent Indium Tin Oxide Electrodes	唐經洲; Jing-Jou Tang;邱裕中; Yu-Zung Chiou
南台科技大學	2004-03	GaN Photodetectors with Transparent Indium Tin Oxide Electrodes	Yu-Zung Chiou; Jing-Jou Tang
臺大學術典藏	2018-09-10T08:17:45Z	GaN Photonic Crystal Membrane Laser	Cheng-Hung Lin,;Jyh-Yang Wang,;Cheng-Yen Chen,;Kun-Ching Shen,;Dong-Ming Yeh,;Yean-Woei Kiang,;C. C. Yang,; Cheng-Hung Lin,; Jyh-Yang Wang,; Cheng-Yen Chen,; Kun-Ching Shen,; Dong-Ming Yeh,; Yean-Woei Kiang,; C. C. Yang,; YEAN-WOEI KIANG
南台科技大學	2002	GaN p–n junction diode formed by Si ion implantation into p-GaN	李明倫; M. L. Lee; J. K. Sheu; L. S. Yeh; M. S. Tsai; C. J. Kao; C. J. Tun; S. J. Chang; G. C. Chi
國立交通大學	2018-08-21T05:53:05Z	GaN Schottky Barrier Diodes on Free-Standing GaN Wafer	Liu, Xinke; Gu, Hong; Li, Kuilong; Wang, Jianfeng; Wang, Lei; Kuo, Hao-Chung; Liu, Wenjun; Chen, Lin; Fang, Jianping; Liu, Meihua; Lin, Xinnan; Xu, Ke; Ao, Jin-Ping
國立臺灣科技大學	2010	GaN schottky barrier photodetectors prepared on patterned sapphire substrate	Chang S.J.; Wang S.M.; Chen T.P.; Young S.J.; Lin Y.C.; Wu S.L.; Huang B.R.
國立成功大學	2012-11	GaN Schottky Barrier Photodetectors with a beta-Ga2O3 Cap Layer	Huang, Zhen-Da; Chuang, Ricky Wenkuei; Weng, Wen-Yin; Chang, Shoou-Jinn; Chiu, Chiu-Jung; Wu, San-Lein
國立成功大學	2011-11	GaN Schottky barrier photodetectors with a lattice matched Al0.82In0.18N intermediate layer	Huang, Z.-D.;Weng, W.-Y.;Chang, S.-J.;Jung, S.-C.;Chiu, C.-J.;Hsueh, T.-J.;Lai, W.-C.;Wu, S.-L.

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