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Institution	Date	Title	Author
實踐大學	2011	GaN Schottky barrier photodetectors with a lattice-matched Al 0.82In0.18 intermediate layer	Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L.
實踐大學	2011	GaN Schottky Barrier Photodetectors With a Lattice-Matched Al0.82In0.18N Intermediate Layer	Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L.
南台科技大學	2003	GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	李明倫; M. L. Lee; J. K. Sheu; W. C. Lai; S. J. Chang; Y. K. Su; M. G. Chen; C. J. Kao; J. M. Tsai; G. C. Chi
南台科技大學	2003	GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	李明倫; M. L. Lee; J. K. Sheu; C. J. Kao; M. C. Chen; C. J. Tun; W. C. Lai; Y. K. Su; S.J. Chang; G. C. Chi
國立成功大學	2003-04-28	GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	Lee, M. L.; Sheu, J. K.; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M.
國立成功大學	2007-09-03	GaN Schottky barrier photodetectors with SiN/GaN nucleation layer	Jhou, Y. D.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, Y. Y.; Liu, C. H.; Lee, H. C.
臺大學術典藏	2021-02-26T08:43:37Z	GaN Schottky contact on the Pattern Sapphire Substrate with Reducted threading dislocation	Lee, C.-C.; Chien, C.-Y.; Cheng, W.I.; Yen, C.-W.; Hu, P.-Y.; Kuan, C.-H.; CHIEH-HSIUNG KUAN
國立成功大學	2012	GaN Schottky Diode with TiW Electrodes on Silicon Substrate Based on AlN/AlGaN Buffer Layer	Chang, Sheng-Po
國立成功大學	2008-03-31	GaN Schottky photodiodes with annealed Ir/Pt semi-transparent contacts	Chang, Ping-Chuan; Yu, Chia-Lin; Chang, Shoou-Jinn; Liu, C. H.
國立臺灣海洋大學	2009	GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration	Shao-Yen Chiu;Kun-Chieh Liang;Tze-Hsuan Huang;Kang-Ping Liu;Hsuan-Wei Huang;Jung-Hui Tsai;Wen-Shiung Lour

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