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Showing items 444636-444645 of 2348419 (234842 Page(s) Totally)
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| 國立成功大學 |
2014-12 |
GaN-Based LEDs With Hot/Cold Factor Improved by the Electron Blocking Layer
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Lam, Kin-Tak; Chang, Shoou-Jinn |
| 國立成功大學 |
2009-09 |
GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars
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Lai, Wei-Chihh; Chen, P. H.; Chang, L. C.; Kuo, Cheng-Huang; Sheu, Jinn-Kong; Tun, Chun-Ju; Shei, Shih-Chang |
| 國立成功大學 |
2012 |
GaN-Based LEDs with Nano-Patterns by Contact-Transferred and Mask-Embedded Lithography and Cl-2/N-2 Plasma Etching
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Zeng, X. F.; Shei, S. C.; Chang, S. J. |
| 國立成功大學 |
2012-05-15 |
GaN-Based LEDs With Omnidirectional Metal Underneath an Insulating SiO2 Layer
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Lin, Nan-Ming; Shei, Shih-Chang; Chang, Shoou-Jinn; Zeng, Xu-Feng |
| 臺大學術典藏 |
2018-09-10T08:42:14Z |
GaN-based LEDs with Photonic Crystal Nanorod Sidewall Reflectors for Versatile Radiation Directionality Control
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Yun-Wei Cheng;Szu-Chieh Wang;Yu-Feng Yin;JianJang Huang; Yun-Wei Cheng; Szu-Chieh Wang; Yu-Feng Yin; JianJang Huang; JIAN-JANG HUANG |
| 國立成功大學 |
2014-01 |
GaN-Based LEDs With Rough Surface and Selective KOH Etching
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Chang, Shoou-Jinn; Chang, L. M.; Kuo, D. S.; Ko, T. K.; Hon, S. J.; Li, Shuguang |
| 國立成功大學 |
2012-02 |
GaN-Based LEDs with Sapphire Debris Removed by Phosphoric Etching
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Chang, Shoou-Jinn; Kuo, D. S.; Lam, K. T.; Wen, K. H.; Ko, T. K.; Hon, S. J. |
| 國立成功大學 |
2012-09-24 |
GaN-based light emitting diodes with micro- and nano-patterned structures by femtosecond laser nonlinear decomposition
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Chen, Jiun-Ting; Lai, Wei-Chih; Chang, Yun-Chorng; Sheu, Jinn-Kong; Sen, Wen-Chih |
| 國立成功大學 |
2003-04 |
GaN-based light emitting diodes with si-doped In0.23Ga0.77N/GaN short period superlattice current spreading layer
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Kuo, Cheng-Huang; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, Liang-Wen; Chen, Jone F.; Sheu, Jinn-Kong; Tsai, Ji-Ming |
| 國立成功大學 |
2016 |
GaN-Based Light Emitting Diodes with Two-Step Grown GaN Quantum Barriers
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Lam, Kin-Tak; Lin, Wei-Heng; Chang, Shoou-Jinn |
Showing items 444636-444645 of 2348419 (234842 Page(s) Totally)
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