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Showing items 446051-446075 of 2348609 (93945 Page(s) Totally)
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| 國立交通大學 |
2017-04-21T06:48:53Z |
Ge Channel MOSFETs Directly on Silicon
|
Chen, Che Wei; Chung, Cheng-Ting; Chien, Chao Hsin |
| 國立交通大學 |
2014-12-08T15:30:25Z |
Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrations
|
Tang, Shih-Hsuan; Kuo, Chien-I; Trinh, Hai-Dang; Chang, Edward Yi; Nguyen, Hong-Quan; Nguyen, Chi-Lang; Luo, Guang-Li |
| 國立交通大學 |
2014-12-08T15:07:51Z |
Ge Epitaxial Growth on GaAs Substrates for Application to Ge-Source/Drain GaAs MOSFETs
|
Luo, Guang-Li; Han, Zong-You; Chien, Chao-Hsin; Ko, Chih-Hsin; Wann, Clement H.; Lin, Hau-Yu; Shen, Yi-Ling; Chung, Cheng-Ting; Huang, Shih-Chiang; Cheng, Chao-Ching; Changb, Chun-Yen |
| 國立交通大學 |
2019-10-05T00:08:42Z |
Ge FinFET CMOS Inverters With Improved Channel Surface Roughness by Using In-Situ ALD Digital O-3 Treatment
|
Yeh, M. -S.; Luo, G. -L.; Hou, F. -J.; Sung, P. -J.; Wang, C. -J.; Su, C. -J.; Wu, C. -T.; Huang, Y. -C.; Hong, T. -C.; Chao, T. -S.; Chen, B. -Y.; Chen, K. -M.; Wu, Y. -C.; Izawa, M.; Miura, M.; Morimoto, M.; Ishimura, H.; Lee, Y. -J.; Wu, W. -F.; Yeh, W. -K. |
| 臺大學術典藏 |
2020-06-16T06:33:18Z |
Ge gate-all-around FETs on Si
|
Liu, C.W.;Wong, I.-H.;Chen, Y.-T.;Tu, W.-H.;Huang, S.-H.;Hsu, S.-H.; Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Tu, W.-H.; Huang, S.-H.; Hsu, S.-H.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T09:20:49Z |
Ge metal-oxide-semiconductor devices with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectric
|
Chu, LK; Chiang, TH; Lin, TD; Lee, YJ; Chu, RL; Kwo, J; Hong, M; MINGHWEI HONG |
| 國立臺灣大學 |
2012 |
Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric
|
Chu, L.K.; Chiang, T.H.; Lin, T.D.; Lee, Y.J.; Chu, R.L.; Kwo, J.; Hong, M. |
| 國立交通大學 |
2019-09-02T07:46:20Z |
Ge nanodot-mediated densification and crystallization of low-pressure chemical vapor deposited Si3N4 for advanced complementary metal-oxide-semiconductor photonics and electronics applications
|
Peng, Kang-Ping; Huang, Tsung Lin; George, Tom; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2018-08-21T05:56:59Z |
Ge Nanowire FETs with HfZrOx Ferroelectric Gate Stack Exhibiting SS of Sub-60 mV/dec and Biasing Effects on Ferroelectric Reliability
|
Su, C. -J.; Hong, T. -C.; Tsou, Y. -C.; Hou, F. -J.; Sung, P. -J.; Yeh, M. -S.; Wan, C. -C.; Kao, K. -H.; Tang, Y. -T.; Chiu, C. -H.; Wang, C. -J.; Chung, S. -T.; You, T. -Y.; Huang, Y. -C.; Wu, C. -T.; Lin, K. -L.; Luo, G. -L.; Huang, K. -P.; Lee, Y. -J.; Chao, T. -S.; Wu, W. -F.; Huang, G. -W.; Shieh, J. -M.; Yeh, W. -K.; Wang, Y. -H. |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Ge out-diffusion and its effect on ordering phase in InGaP grown on Ge substrate
|
Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN; H. M. Wu,;Y. J. Yang,;H. H. Lin,; H. M. Wu, |
| 國立臺灣大學 |
2004-10 |
Ge Outdiffusion Effect on Flicker Noise in Strained-Si nMOSFETs
|
Hua, W.C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M. |
| 臺大學術典藏 |
2018-09-10T04:55:29Z |
Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs
|
Hua, W.-C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M.; CHEE-WEE LIU |
| 國立臺灣大學 |
2003 |
Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum
|
Peng, Y. H.; Chen, C. C.; Kuan, C. H.; Cheng, H. H. |
| 國立臺灣大學 |
2003-01 |
Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum
|
Peng, Y. H.; Chen, C. C.; Kuan, C. H.; Cheng, H. H. |
| 臺大學術典藏 |
2003 |
Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum
|
CHIEH-HSIUNG KUAN; Cheng, H.H.; Kuan, C.H.; Chen, C.C.; Peng, Y.H.; Peng, Y.H.;Chen, C.C.;Kuan, C.H.;Cheng, H.H. |
| 臺大學術典藏 |
2018-09-10T04:12:36Z |
Ge quantum dots sandwiched between two thick Si blocking layers to increase high detectivity
|
Peng, Y.H.; Chen, C.C.; Kuan, C.H.; Cheng, H.H.; CHIEH-HSIUNG KUAN |
| 國立臺灣大學 |
2002 |
Ge quantum dots sandwiched between two thick Si blocking layers to increase high detectivity
|
Peng, Y.H.; Chen, C.C.; Kuan, C.H.; Cheng, H.H. |
| 國立交通大學 |
2014-12-08T15:28:41Z |
Ge technology beyond Si CMOS
|
Chin, Albert |
| 國立成功大學 |
2010-07-01 |
Ge-doped In2O3和In2Ge2O7奈米線的調控生長及光學性質研究
|
游智凱; Yu, Chih-Kai |
| 國立成功大學 |
2010-07-01 |
Ge-doped In2O3和In2Ge2O7奈米線的調控生長及光學性質研究
|
游智凱; Yu, Chih-Kai |
| 國立交通大學 |
2015-11-26T01:07:53Z |
Ge-Ku-Duffing系統及Sprott C, E系統的渾沌與渾沌同步
|
李泳厚; Li, Yong-Hou; 戈正銘; Ge, Zheng-Ming |
| 國立交通大學 |
2015-11-26T01:07:51Z |
Ge-Ku-Mathieu系統及Sprott19, 22系統的渾沌及渾沌同步
|
王翔平; Wang, Xiang- Ping; 戈正銘; Ge, Zheng-Ming |
| 國立交通大學 |
2015-11-26T01:07:54Z |
Ge-Ku-van der Pol系統及Sprott 22系統的渾沌與渾沌同步
|
蔡尚恩; Tsai, Shang- En; 戈正銘; Ge, Zheng-Ming |
| 元培科技大學 |
2006 |
GE-MINItrac 醫用迴旋加速器環境輻射評估
|
郭明杰;卓奕均; 陳耀文;殷國維;邱志宏;林招膨 |
| 國立臺灣大學 |
2007 |
Ge-on-glass Detectors
|
Lin, C.-H.; Chiang, Y.-T.; Hsu, C.-C.; Lee, C.-H.; Huang, C.-F.; Lai, C.-H.; Cheng, T.-H.; Liu, C. W. |
Showing items 446051-446075 of 2348609 (93945 Page(s) Totally)
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