|
|
???tair.name??? >
???browser.page.title.title???
|
Showing items 474651-474675 of 2348487 (93940 Page(s) Totally)
<< < 18982 18983 18984 18985 18986 18987 18988 18989 18990 18991 > >>
View [10|25|50] records per page
| 臺大學術典藏 |
2018-09-10T05:51:46Z |
Hole distribution in (Tl0.5Pb0.5)Sr-2(Ca1-xYx)Cu2O7 studied by x-ray absorption spectroscopy
|
Chen, J. M.;Liu, R. S.;Liang, W. Y.; Chen, J. M.; Liu, R. S.; Liang, W. Y.; RU-SHI LIU |
| 臺大學術典藏 |
2018-09-10T06:21:48Z |
Hole distribution in the underdoped, optimally doped, and overdoped superconductors (Tl0.5Pb0.5)Sr-2(Ca1-xYx)Cu2O7
|
Liu, R. S.;Chen, J. M.;Liang, W. Y.; Liu, R. S.; Chen, J. M.; Liang, W. Y.; RU-SHI LIU |
| 臺大學術典藏 |
2018-09-10T06:56:05Z |
Hole distribution in underdoped and overdoped Y(Ba2-ySry)Cu3O6+delta compounds studied by X-ray absorption spectroscopy
|
Liu, R. S.;Chang, C. Y.;Chen, J. M.; Liu, R. S.; Chang, C. Y.; Chen, J. M.; RU-SHI LIU |
| 國立交通大學 |
2014-12-08T15:38:44Z |
Hole distribution in YxPr1-xBa2Cu4O8 and YxPr1-xBa2Cu3O7 probed by X-ray absorption spectroscopy
|
Chen, JM; Liu, SJ; Lee, JM; Lin, JY; Gou, YS; Yang, HD |
| 國立臺灣大學 |
2005-06 |
Hole Distribution of Intercalated Cuprates Using x-ray Absorption Spectroscopy
|
Chen, J.M.; Chang, S.C.; Liu, R.S.; Lee, J.M.; Park, M.; Choy, J.H. |
| 臺大學術典藏 |
2018-09-10T05:16:51Z |
Hole distribution of intercalated cuprates using x-ray absorption spectroscopy
|
Chen, J. M.; Chang, S. C.; Liu, R. S.; Lee, J. M.; Park, M.; Choy, J. H.; Chen, J. M.; Chang, S. C.; Liu, R. S.; Lee, J. M.; Park, M.; Choy, J. H.; RU-SHI LIU |
| 國立臺灣大學 |
2005 |
Hole doping and superconductivity characteristics of the s=1, 2 and 3 members of the (Cu,Mo)-12s2 homologous series of layered copper oxides
|
Karppinen, M; Morita, Y; Kobayashi, T; Grigoraviciute, I; Chen, JM; Liu, RS; Yamauchi, H |
| 臺大學術典藏 |
2018-09-10T05:16:51Z |
Hole doping and superconductivity characteristics of the s=1, 2 and 3 members of the (Cu,Mo)-12s2 homologous series of layered copper oxides
|
Karppinen, M.;Morita, Y.;Kobayashi, T.;Grigoraviciute, I.;Chen, J. M.;Liu, R. S.;Yamauchi, H.; Karppinen, M.; Morita, Y.; Kobayashi, T.; Grigoraviciute, I.; Chen, J. M.; Liu, R. S.; Yamauchi, H.; Hung, Ming-Hui; RU-SHI LIU; Cheng, Ya-Jung |
| 國立交通大學 |
2019-04-03T06:44:45Z |
Hole doping by molecular oxygen in organic semiconductors: Band-structure calculations
|
Lu, Chi-Ken; Meng, Hsin-Fei |
| 臺大學術典藏 |
2018-09-10T04:28:28Z |
Hole doping in Pb-free and Pb-substituted (Bi,Pb)(2)Sr2Ca2Cu3O10+delta superconductors
|
Karppinen, M.;Lee, S.;Lee, J. M.;Poulsen, J.;Nomura, T.;Tajima, S.;Chen, J. M.;Liu, R. S.;Yamauchi, H.; Karppinen, M.; Lee, S.; Lee, J. M.; Poulsen, J.; Nomura, T.; Tajima, S.; Chen, J. M.; Liu, R. S.; Yamauchi, H.; RU-SHI LIU |
| 臺大學術典藏 |
2018-09-10T05:51:44Z |
Hole doping into Co-12s2 copper oxides with s fluorite-structured layers between CuO2 planes
|
Fjellvag, H.; Fjellvag, H.; RU-SHI LIU |
| 國立臺灣大學 |
2006 |
Hole doping into Co-12s2 copper oxides with s fluorite-structured layers between CuO2 planespiezolaminated composite plate
|
Fjellvag, H.; Moritaa, Y.; Nagai, T.; Lee, J.M.; Chen, J.M.; Liu, R.S.; Hauback, B.C.; Awana, V.P.S.; Matsui, Y.; Yamauchi, H.; Karppinen, M. |
| 中原大學 |
2004-11-01 |
Hole Effective Mass in Strained Si1-xCx Alloys
|
C. Y. Lin;S. T. Chang;C. W. Liu |
| 國立臺灣大學 |
2004 |
Hole effective mass in strained Si1-xCx alloys
|
Lin, C. Y.; Chang, S. T.; Liu, C. W. |
| 臺大學術典藏 |
2018-09-10T04:55:28Z |
Hole effective mass in strained Si1-xCx alloys
|
Chang, S.T.; Liu, C.W.; CHEE-WEE LIU; Lin, C.Y.; Lin, C.Y.;Chang, S.T.;Liu, C.W. |
| 國立交通大學 |
2014-12-08T15:11:49Z |
Hole Effective Masses as a Booster of Self-Consistent Six-Band k . p Simulation in Inversion Layers of pMOSFETs
|
Chen, Ming-Jer; Lee, Chien-Chih; Cheng, Kuan-Hao |
| 國立臺灣大學 |
1997 |
Hole effective masses in relaxed Si1 - xCx and Si1 - yGey alloys
|
Lin, C. Y.; Liu, C. W. |
| 臺大學術典藏 |
2018-09-10T06:31:22Z |
Hole effective masses in relaxed Si1-xCx and Si1-yGey alloys
|
Lin, C.Y.; Liu, C.W.; CHEE-WEE LIU |
| 國立成功大學 |
2007-04-16 |
Hole escape processes detrimental to photoluminescence efficiency in a blue InGaN multiple-quantum-well diode under reverse bias conditions
|
Inoue, T.; Fujiwara, K.; Sheu, Jinn-Kong |
| 修平科技大學 |
2005 |
Hole Flanging with Multi-Action Extrusion(孔凸緣複動化擠伸成形)
|
林恆勝;吳家宏 |
| 國立交通大學 |
2017-04-21T06:49:23Z |
Hole g-Factor Anisotropies in Individual InAs Quantum Rings
|
Kaji, R.; Tominaga, T.; Wu, Y. -N.; Wu, M. -F.; Cheng, S. -J.; Adachi, S. |
| 國立交通大學 |
2014-12-08T15:38:13Z |
Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer
|
Wang, C. H.; Ke, C. C.; Lee, C. Y.; Chang, S. P.; Chang, W. T.; Li, J. C.; Li, Z. Y.; Yang, H. C.; Kuo, H. C.; Lu, T. C.; Wang, S. C. |
| 國立交通大學 |
2014-12-08T15:31:58Z |
Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
|
Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chen, Jenn-Fang; Su, Yan-Kuin |
| 國立成功大學 |
2013-08 |
Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
|
Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chen, Jenn-Fang; Su, Yan-Kuin |
| 國立交通大學 |
2014-12-08T15:35:07Z |
Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer
|
Lin, Bing-Cheng; Chen, Kuo-Ju; Wang, Chao-Hsun; Chiu, Ching-Hsueh; Lan, Yu-Pin; Lin, Chien-Chung; Lee, Po-Tsung; Shih, Min-Hsiung; Kuo, Yen-Kuang; Kuo, Hao-Chung |
Showing items 474651-474675 of 2348487 (93940 Page(s) Totally)
<< < 18982 18983 18984 18985 18986 18987 18988 18989 18990 18991 > >>
View [10|25|50] records per page
|
