| 臺大學術典藏 |
2020-06-11T06:38:38Z |
MoS 2 nano-flake doped polyvinyl alcohol enabling polarized soliton mode-locking of a fiber laser
|
Chen, T.-H.;Lin, C.-Y.;Lin, Y.-H.;Chi, Y.-C.;Cheng, C.-H.;Luo, Z.;Lin, G.-R.; Chen, T.-H.; Lin, C.-Y.; Lin, Y.-H.; Chi, Y.-C.; Cheng, C.-H.; Luo, Z.; Lin, G.-R.; GONG-RU LIN |
| 國立交通大學 |
2014-12-08T15:27:44Z |
MOS characteristics of N2O-grown and NO-annealed oxynitrides
|
Sun, SC; Chen, CH; Lou, JC |
| 淡江大學 |
2002-08 |
MOS Charge Pump for Sub-2.0V Operation
|
Cheng, Kuo-Hsing; Chang, Chung-Yu |
| 國立交通大學 |
2014-12-08T15:05:35Z |
MOS DEVICE PARAMETER OPTIMIZATION BASED ON TRANSIENT TRAJECTORY CONSIDERATIONS
|
WU, CY; JANG, WY; LIU, ID |
| 臺大學術典藏 |
2018-09-10T14:56:27Z |
MOS Devices with Ultra-High Dielectric Constants and Methods of Forming the Same
|
Liao, Ming-Han;Hong, Minghwei; Liao, Ming-Han; Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2019-03-11T08:02:07Z |
MOS Devices with UltraHigh Dielectric Constants and Methods of Forming the Same
|
M.Hongh;M.H.Liao; M.H.Liao; M.Hongh |
| 臺大學術典藏 |
2018-09-10T06:28:16Z |
MOS Ge Diodes Based on High kappa Gate Dielectrics Grown by MBE and ALD
|
Lee, Kun Yu; Lee, WC; Lin, TD; Lee, CS; Chang, YC; Lee, YJ; Huang, ML; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG |
| 國立臺灣大學 |
2003-12 |
MOS Ge/Si quantum dot infrared photodetectors with quantum dot and wetting layer responses
|
Hsu, B.C.; Chang, S.T.; Kuo, P.S.; Chen, P.S.; Liu, C.W.; Lu, J.H.; Kuan, C.H. |
| 國立交通大學 |
2014-12-08T15:01:54Z |
MOS magnetic current sensor based on standard CMOS process
|
Yang, HM; Lei, TF; Huang, YC; Lee, CL |
| 國立交通大學 |
2019-04-02T06:00:22Z |
MOS magnetic current sensor based on standard CMOS process
|
Yang, HM; Lei, TF; Huang, YC; Lee, CL |
| 臺大學術典藏 |
2018-09-10T04:51:29Z |
MOS multimedia E-mail system
|
Ouhyoung, Ming; MING OUHYOUNG et al.; Chen, Wen-Chin; Lei, Yuong-Wei; Chang, Keh-Ning; Liang, Ching-Lun; Wang, Shwu-Fen; Yan, Yung-Huei; Wu, Jiann-Rong; Chen, Herng-Yow; Liu, Nien-Bao; Wang, Yin-Lai; Hwu, Tzong-Yin; Su, Wei-Ming; Liang, Rung-Heui; Fu, Kuo-Chang |
| 國立臺灣大學 |
2011 |
MOS photodetectors based on Au-nanorod doped graphene electrodes
|
Chen, Yung-Ting; Hsieh, Ya-Ping; Shih, Fu-Yu; Chang, Chih-Yung; Hofmann, Mario; Chen, Yang-Fang |
| 臺大學術典藏 |
2011 |
MOS photodetectors based on Au-nanorod doped graphene electrodes
|
Chen, Y.-T.;Hsieh, Y.-P.;Shih, F.-Y.;Chang, C.-Y.;Hofmann, M.;Chen, Y.-F.; Chen, Y.-T.; Hsieh, Y.-P.; Shih, F.-Y.; Chang, C.-Y.; Hofmann, M.; Chen, Y.-F.; YANG-FANG CHEN; Mario Hofmann |
| 國立高雄師範大學 |
2011-09 |
MOS Power Cells for Output Power Levels of 17 to 23 dBm
|
Ruey-Lue Wang;Chien-Hsuan Liu;Chung-Chin Chuang;Chih-Ho Tu;Ying-Zong Juang;Yan-Kuin Su; 王瑞祿 |
| 淡江大學 |
2015-05-04 |
MOS PowerPoint 2013國際認證應考教材(官方授權教材／附贈模擬認證系統)
|
劉文琇 |
| 臺大學術典藏 |
2018-09-10T05:58:49Z |
MOS Si/Ge photodetectors
|
Lin, C.-H.; Liu, C.W.; CHEE-WEE LIU |
| 國立東華大學 |
2006-10 |
MOS Si/Ge photodetectors,” in “Optoelectronic Devices: Physics, Fabrication, and Application III
|
林楚軒; Lin, Chu-Hsuan; C.-H Lin;C. W. Liu |
| 國立高雄師範大學 |
2011-06-19 |
Mos Solar Cells with Oxides Deposited by Sol-Gel Processing
|
Chia-Hong Huang;Chung-Cheng Chang;Jung-Hui Tsai; 黃嘉宏;蔡榮輝 |
| 國立臺灣海洋大學 |
2011-11 |
MOS solar cells with oxides deposited by sol-gel processing
|
Chia-Hong Huang;Chung-Cheng Chang;Jung-Hui Tsai |
| 國立聯合大學 |
2004 |
MOS Tunneling Diodes with Ultra-thin Oxides of N-type and P-type Silicon Substrates
|
胡振國 , Y.P.Lin and J.G.Hwu |
| 國立交通大學 |
2014-12-12T02:05:43Z |
MOS--C濾波器上的自動調整線路
|
王燕暉; WANG, YAN-HEI; 黃伯修; HUANG, BO-XIU |
| 國立交通大學 |
2014-12-08T15:26:21Z |
MOS-bounded diodes for on-chip ESD protection in a 0.15-mu m shallow-trench-isolation salicided CMOS process
|
Ker, MD; Lin, KH; Chuang, CH |
| 國立交通大學 |
2014-12-08T15:19:40Z |
MOS-bounded diodes for on-chip ESD protection in deep submicron CMOS process
|
Ker, MD; Lin, KH; Chuang, CH |
| 國立臺灣科技大學 |
1997 |
MOS-微電阻陣列紅外線影像產生器系統設計
|
魏水根;王建勳 |
| 國立成功大學 |
2017 |
MoS2
|
Chen;S, C.;Wu;J, Y.;Lin;C, Y.;Lin;M, F. |
