|
顯示項目 628101-628110 / 2348617 (共234862頁)
<< < 62806 62807 62808 62809 62810 62811 62812 62813 62814 62815 > >>
每頁顯示[10|25|50]項目
| 元智大學 |
2006 |
Ohlson模型與股利折現模型之實證研究
|
洪莉雯; Li-Wen Hung |
| 國立成功大學 |
2017 |
Ohmic contact behavior of aluminum-doped zinc oxide with carbon-doped p-GaP epilayer for AlGaInP LEDs applications
|
Tseng, M.-C.;Wuu, D.-S.;Chen, Chen C.-L.;Lee, H.-Y.;Horng, R.-H. |
| 國立交通大學 |
2018-08-21T05:54:01Z |
Ohmic contact behavior of aluminum-doped zinc oxide with carbondoped p-GaP epilayer for AlGaInP LEDs applications
|
Tseng, Ming-Chun; Wuu, Dong-Sing; Chen, Chi-Lu; Lee, Hsin-Ying; Horng, Ray-Hua |
| 國立臺灣科技大學 |
2015 |
Ohmic contact fabrication using a focused-ion beam technique and electrical characterization for layer semiconductor nanostructures
|
Chen, R.-S.;Tang, C.-C.;Shen, W.-C.;Huang, Y.-S. |
| 國立交通大學 |
2014-12-16T06:15:25Z |
OHMIC CONTACT OF III-V SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
|
CHANG, Edward Yi; KUO, Chien-I; CHANG, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:28:53Z |
Ohmic contact on n-type Ge using Yb-germanide
|
Zheng, Zhi-Wei; Ku, Teng-Chieh; Liu, Ming; Chin, Albert |
| 國立成功大學 |
2000 |
Ohmic contacts and reactive ion beam etching for p-type GaN
|
Chung, Fuh-Shyang; Chang,� Shoou-Jinn; Su, Yan-Kuin; Chen, C. J.; �Sheu, �Jinn-Kong |
| 國立成功大學 |
2000 |
Ohmic contacts to GaN with rapid thermal annealing
|
Chi,� L.�W.; �Lam,� K. �T.; �Kao,� Y. �K.; �Juang,� Fuh-Shyang; �Tasi,� Y. �S.; �Su,� Yan-Kuin; Chang,� Shoou-Jinn; �Chen, �C. �C.; �Sheu, �Jinn-Kong |
| 國立成功大學 |
2002 |
Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN cap-layers
|
Gessmann T.; Li Y. L.; Waldron E. L.; Graff J. W.; Schubert E. F.; �Sheu, �Jinn-Kong |
| 國立交通大學 |
2020-02-02T23:55:35Z |
Ohmic Contacts with low contact resistance for GaN HEMTs
|
Chang, Edward Yi; Lin, Yen-Ku |
顯示項目 628101-628110 / 2348617 (共234862頁)
<< < 62806 62807 62808 62809 62810 62811 62812 62813 62814 62815 > >>
每頁顯示[10|25|50]項目
|
