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Institution Date Title Author
國立交通大學 2017-04-21T06:55:59Z Oxide Heteroepitaxy for Flexible Optoelectronics Bitla, Yugandhar; Chen, Ching; Lee, Hsien-Chang; Do, Thi Hien; Ma, Chun-Hao; Van Qui, Le; Huang, Chun-Wei; Wu, Wen-Wei; Chang, Li; Chiu, Po-Wen; Chu, Ying-Hao
國立交通大學 2019-09-02T07:46:18Z Oxide Heteroepitaxy-Based Flexible Ferroelectric Transistor Tsai, Meng-Fu; Jiang, Jie; Shao, Pao-Wen; Lai, Yu-Hong; Chen, Jhih-Wei; Ho, Sheng-Zhu; Chen, Yi-Chun; Tsai, Din-Ping; Chu, Ying-Hao
國立成功大學 2019 Oxide Heteroepitaxy-Based Flexible Ferroelectric Transistor Tsai, M.-F.;Jiang, Jiang J.;Shao, P.-W.;Lai, Y.-H.;Chen, J.-W.;Ho, S.-Z.;Chen, Y.-C.;Tsai, D.-P.;Chu, Y.-H.
國立交通大學 2014-12-08T15:24:27Z Oxide interfaces: pathways to novel phenomena Yu, Pu; Chu, Ying-Hao; Ramesh, Ramamoorthy
國立中山大學 2007-06 Oxide Islands Design for Elimination of Ultra-shallow Junction Formation Jyi-Tsong Lin;Yi-Chuen Eng
大葉大學 2015-12-18 Oxide layer in metal-oxide-semiconductor field effect transistor and its effect on threshold voltage Fan, Jung-Chuan;Lee, Tsung-Che;Lee, Li-Ying;Lee, Shih-Fong
大葉大學 2016-07-11 Oxide layer in metal-oxide-semiconductor field effect transistor and its effect on threshold voltage Fan, Jung-Chuan;Lee, Shih-Fong
國立成功大學 2009-11-18 Oxide mediated liquid-solid growth of high aspect ratio aligned gold silicide nanowires on Si(110) substrates Bhatta, Umananda M.; Rath, Ashutosh; Dash, Jatis K.; Ghatak, Jay; Lai Yi-Feng; Liu, Chuan-Pu; Satyam, P. V.
臺大學術典藏 1990-07 Oxide Resistance Characterization in MOS structures by the Voltage Decay Method Hwu, Jenn-Gwo; Ho, I-Hsiu; Hwu, Jenn-Gwo; Ho, I-Hsiu
國立臺灣大學 1990-07 Oxide Resistance Characterization in MOS structures by the Voltage Decay Method Hwu, Jenn-Gwo; Ho, I-Hsiu
臺大學術典藏 2018-09-10T04:13:01Z Oxide roughness effect on tunneling current of MOS diodes Hsu, B.-C.; Chen, K.-F.; Lai, C.-C.; Lee, S.W.; Liu, C.W.; CHEE-WEE LIU
國立臺灣大學 2002 Oxide roughness effect on tunneling current of MOS diodes Hsu, B.-C.; Chen, K.-F.; Lai, C.-C.; Lee, S.W.; Liu, C.W.
臺大學術典藏 2018-09-10T03:48:04Z Oxide roughness enhanced reliability of MOS tunneling diodes Lin, C.-H.; Lee, M.H.; Hsu, B.-C.; Chen, K.-F.; Shie, C.-R.; Liu, C.W.; CHEE-WEE LIU
國立臺灣大學 2001-12 Oxide roughness enhanced reliability of MOS tunneling diodes Lin, C.H.; Lee, M.H.; Hsu, B.C.; Chen, K.F.; Shie, C.R.; Liu, C.W.
臺大學術典藏 2018-09-10T07:01:14Z Oxide scalability in Al [sub 2] O [sub 3]/Ga [sub 2] O [sub 3](Gd [sub 2] O [sub 3])/In [sub 0.20] Ga [sub 0.80] As/GaAs heterostructures Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG; Chang, P; Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC
臺大學術典藏 2019-12-27T07:49:41Z Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructures Shiu, K.H.; Chiang, C.H.; Lee, Y.J.; Lee, W.C.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:20Z Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG
臺大學術典藏 2022-09-21T23:30:16Z Oxide Semiconductor Field-Effect Transistor for High-Resolution Displays Capable of Deep Black Display Okazaki, Yutaka; Sawai, Hiromi; Endo, Masami; Motoyoshi, Ryousuke; Shimada, Daigo; Kunitake, Hitoshi; Yamazaki, Shunpei; Huang, Kou Chang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO; Chang, Shou Zen
國立臺灣科技大學 2012 Oxide solar cells fabricated using zinc oxide and plasma-oxidized cuprous oxide Chan, Y.-M.;Wu, Y.-T.;Jou, S.
國立交通大學 2014-12-08T15:46:47Z Oxide thickness dependence of plasma charging damage Lin, HC; Chen, CC; Wang, MF; Hsien, SK; Chien, CH; Huang, TY; Chang, CY
國立聯合大學 2004 Oxide Thickness Dependent Suboxide Width and Its Effect on Inversion Tunneling Current 胡振國, Y.P.Lin and J.G.Hwu
國立臺灣大學 2004 Oxide Thickness Dependent Suboxide Width and Its Effect on Inversion Tunneling Current Lin, Yen-Po; Hwu, Jenn-Gwo
國立交通大學 2014-12-08T15:21:32Z Oxide Thinning and Structure Scaling Down Effect of Low-Temperature Poly-Si Thin-Film Transistors Ma, William Cheng-Yu; Chiang, Tsung-Yu; Lin, Je-Wei; Chao, Tien-Sheng
國立交通大學 2014-12-08T15:45:02Z Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides Chen, MJ; Kang, TK; Liu, CH; Chang, YJ; Fu, KY
國立交通大學 2017-04-21T06:50:01Z Oxide-Based RRAM: Unified Microscopic Principle for both Unipolar and Bipolar Switching Gao, B.; Kang, J. F.; Chen, Y. S.; Zhang, F. F.; Chen, B.; Huang, P.; Liu, L. F.; Liu, X. Y.; Wang, Y. Y.; Tran, X. A.; Wang, Z. R.; Yu, H. Y.; Chin, Albert

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