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Showing items 647326-647350 of 2348406 (93937 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T04:13:01Z |
Oxide roughness effect on tunneling current of MOS diodes
|
Hsu, B.-C.; Chen, K.-F.; Lai, C.-C.; Lee, S.W.; Liu, C.W.; CHEE-WEE LIU |
| 國立臺灣大學 |
2002 |
Oxide roughness effect on tunneling current of MOS diodes
|
Hsu, B.-C.; Chen, K.-F.; Lai, C.-C.; Lee, S.W.; Liu, C.W. |
| 臺大學術典藏 |
2018-09-10T03:48:04Z |
Oxide roughness enhanced reliability of MOS tunneling diodes
|
Lin, C.-H.; Lee, M.H.; Hsu, B.-C.; Chen, K.-F.; Shie, C.-R.; Liu, C.W.; CHEE-WEE LIU |
| 國立臺灣大學 |
2001-12 |
Oxide roughness enhanced reliability of MOS tunneling diodes
|
Lin, C.H.; Lee, M.H.; Hsu, B.C.; Chen, K.F.; Shie, C.R.; Liu, C.W. |
| 臺大學術典藏 |
2018-09-10T07:01:14Z |
Oxide scalability in Al [sub 2] O [sub 3]/Ga [sub 2] O [sub 3](Gd [sub 2] O [sub 3])/In [sub 0.20] Ga [sub 0.80] As/GaAs heterostructures
|
Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG; Chang, P; Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC |
| 臺大學術典藏 |
2019-12-27T07:49:41Z |
Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructures
|
Shiu, K.H.; Chiang, C.H.; Lee, Y.J.; Lee, W.C.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:20Z |
Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures
|
Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG |
| 臺大學術典藏 |
2022-09-21T23:30:16Z |
Oxide Semiconductor Field-Effect Transistor for High-Resolution Displays Capable of Deep Black Display
|
Okazaki, Yutaka; Sawai, Hiromi; Endo, Masami; Motoyoshi, Ryousuke; Shimada, Daigo; Kunitake, Hitoshi; Yamazaki, Shunpei; Huang, Kou Chang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO; Chang, Shou Zen |
| 國立臺灣科技大學 |
2012 |
Oxide solar cells fabricated using zinc oxide and plasma-oxidized cuprous oxide
|
Chan, Y.-M.;Wu, Y.-T.;Jou, S. |
| 國立交通大學 |
2014-12-08T15:46:47Z |
Oxide thickness dependence of plasma charging damage
|
Lin, HC; Chen, CC; Wang, MF; Hsien, SK; Chien, CH; Huang, TY; Chang, CY |
| 國立聯合大學 |
2004 |
Oxide Thickness Dependent Suboxide Width and Its Effect on Inversion Tunneling Current
|
胡振國, Y.P.Lin and J.G.Hwu |
| 國立臺灣大學 |
2004 |
Oxide Thickness Dependent Suboxide Width and Its Effect on Inversion Tunneling Current
|
Lin, Yen-Po; Hwu, Jenn-Gwo |
| 國立交通大學 |
2014-12-08T15:21:32Z |
Oxide Thinning and Structure Scaling Down Effect of Low-Temperature Poly-Si Thin-Film Transistors
|
Ma, William Cheng-Yu; Chiang, Tsung-Yu; Lin, Je-Wei; Chao, Tien-Sheng |
| 國立交通大學 |
2014-12-08T15:45:02Z |
Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides
|
Chen, MJ; Kang, TK; Liu, CH; Chang, YJ; Fu, KY |
| 國立交通大學 |
2017-04-21T06:50:01Z |
Oxide-Based RRAM: Unified Microscopic Principle for both Unipolar and Bipolar Switching
|
Gao, B.; Kang, J. F.; Chen, Y. S.; Zhang, F. F.; Chen, B.; Huang, P.; Liu, L. F.; Liu, X. Y.; Wang, Y. Y.; Tran, X. A.; Wang, Z. R.; Yu, H. Y.; Chin, Albert |
| 臺大學術典藏 |
2021-09-02T00:03:42Z |
Oxide-confined VCSEL with metal apertures for high-speed 850nm transmission
|
Min S.-Y;Cheng H.-T;Pan J.-S;Lin W.-H;Wu C.-H.; Min S.-Y; Cheng H.-T; Pan J.-S; Lin W.-H; Wu C.-H.; CHAO-HSIN WU |
| 臺大學術典藏 |
2020-06-29T01:15:35Z |
Oxide-Confined VCSELs for High-Speed Optical Interconnects
|
Feng, M.;Wu, C.-H.;Holonyak, N.; Feng, M.; Wu, C.-H.; Holonyak, N.; CHAO-HSIN WU |
| 國立交通大學 |
2014-12-08T15:42:45Z |
Oxide-confined vertical-cavity surface-emitting lasers pumped Nd : YVO4 microchip lasers
|
Lan, YP; Chen, YF; Huang, KF; Lai, HC; Pan, JS |
| 國立成功大學 |
1998 |
Oxide-GaAs Interfacial Electronic Properties Characterized by Modulation Spectroscopy of Photoreflectance
|
Hwang, J. S.; Wang, Y. C.; Chou, W. Y.; Tyan, S. L.; Hong, M.; Mannaerts, J. P.; Kwo, J. |
| 臺大學術典藏 |
2018-09-10T07:01:20Z |
Oxide-GaAs interfacial electronic properties characterized by modulation spectroscopy of photoreflectance
|
Hwang, JS;Wang, YC;Chou, WY;Tyan, SL;Hong, M;Mannaerts, JP;Kwo, J;others; Hwang, JS; Wang, YC; Chou, WY; Tyan, SL; Hong, M; Mannaerts, JP; Kwo, J; others; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:17:19Z |
Oxide-mediated fort-nation of epitaxy silicide on heavily doped Si surfaces and narrow width active region
|
Chen, YM; Tu, GC; Wang, YL |
| 國立交通大學 |
2014-12-08T15:30:23Z |
Oxide-Relief and Zn-Diffusion 850-nm Vertical-Cavity Surface-Emitting Lasers With Extremely Low Energy-to-Data-Rate Ratios for 40 Gbit/s Operations
|
Shi, Jin-Wei; Yan, Jhih-Cheng; Wun, Jhih-Min; Chen, Jason; Yang, Ying-Jay |
| 國立交通大學 |
2005-12-01 |
Oxide-trap-enhanced Coulomb energy in a metal-oxide-semiconductor system
|
Lu, MP; Chen, MJ |
| 國立臺灣大學 |
2007 |
Oxide-trapped charges induced by electrostatic discharge impulse stress
|
Tseng, Jen-Chou; Hwu, Jenn-Gwo |
| 中國醫藥大學 |
2012-10 |
Oxidized ApoC1 on MALDI-TOF and glycated-ApoA1 band on gradient gel as potential diagnostic tools for atherosclerotic vascular disease
|
張志宗(Chiz-Tzung Chang);廖欣儀(Hsin-Yi Liao);張家銘(Chia-Ming Chang);陳佳瑩(Chia-Ying Chen);陳珠璜(Chu-Huang Chen);楊朝諭(Chao-Yuh Yang);蔡輔仁(Fuu-Jen Tsai);陳朝榮(Chao-Jung Chen)* |
Showing items 647326-647350 of 2348406 (93937 Page(s) Totally)
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