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Showing items 876001-876025 of 2348685 (93948 Page(s) Totally)
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| 東海大學 |
2006-12-04 |
Threshold signature scheme resistible for conspiracy attack
|
Chung, Y.F.a , Liu, C.-H.b , Lai, F.ac , Chen, T.-S. |
| 臺大學術典藏 |
2020-04-16T02:35:08Z |
Threshold signature scheme resistible for conspiracy attack
|
Chung, Y.F.; Liu, C.-H.; Lai, F.; Chen, T.-S.; FEI-PEI LAI |
| 東海大學 |
2006-12-04 |
Threshold signature scheme resistible for conspiracy attack??
|
Chung, Y.F., Liu, C.-H., Lai, F., Chen, T.-S. |
| 佛光大學 |
2003-08-15 |
Threshold signature scheme using self-certified public keys
|
吳宗杉;Hsu C.L. |
| 南台科技大學 |
2001-03 |
Threshold signature scheme with multiple signing policies
|
李南逸; N.Y. Lee |
| 國立勤益科技大學 |
1998 |
Threshold signature schemes with traceable signers in group communications
|
Wang, Ching-Te;Lin, Chu-Hsing;Chang, Chin-Chen |
| 東海大學 |
1998-06 |
Threshold Signature Schemes with Traceable Signers in Group Communications
|
林祝興; Wang, C. T., Chu-Hsing Lin and C. C. Chang |
| 東海大學 |
1998-06-25 |
Threshold signature schemes with traceable signers in group communications
|
Wang, C.-T., Lin, C.-H., Chang, C.-C. |
| 亞洲大學 |
2005-11 |
Threshold Signatures: Current Status and Key Issues
|
黃明祥;Hwang, Min-Shiang |
| 淡江大學 |
1991-06 |
Threshold structures in the multiphoton detachment yield from the H- ion
|
Tang, Chen-yau; Bryant, H. C.; Harris, P. G.; Mohagheghi, A. H.; Reeder, R. A.; Sharifian, H.; Tootoonchi, H.; Quick, C. R.; Donahue, J. B.; Cohen, Stanley; Smith, W. W. |
| 國立交通大學 |
2014-12-08T15:05:36Z |
THRESHOLD SWITCHING TRANSIENT IN METAL A-SI-H C-SI(P-N) (MASS) HETEROJUNCTION DEVICE
|
CHEN, YW; FANG, YK; LEE, HD; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:39:24Z |
Threshold untraceable signature for group communications
|
Chang, TY; Yang, CC; Hwang, MS |
| 亞洲大學 |
2004-04 |
Threshold Untraceable Signature for Group Communications
|
黃明祥;Hwang, Min-Shiang |
| 國立交通大學 |
2018-08-21T05:56:34Z |
Threshold Vacuum Switch (TVS) on 3D-Stackable and 4F(2) Cross-Point Bipolar and Unipolar Resistive Random Access Memory
|
Ho, ChiaHua; Huang, Hsin-Hau; Lee, Ming-Taou; Hsu, Cho-Lun; Lai, Tung-Yen; Chiu, Wen-Cheng; Lee, Meiyi; Chou, Tong-Huan; Yang, Ivy; Chen, Min-Cheng; Wu, Cheng-San; Chiang, Kuang-Hao; Yao, Yong-Der; Hu, Chenming; Yang, Fu-Liang |
| 臺大學術典藏 |
2018-09-10T08:15:11Z |
Threshold voltage and mobility extraction of NBTI degradation of poly-Si thin-film transistors
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Sun, H.-C.;Huang, C.-F.;Chen, Y.-T.;Wu, T.-Y.;Liu, C.W.;Hsu, Y.-J.;Chen, J.-S.; Sun, H.-C.; Huang, C.-F.; Chen, Y.-T.; Wu, T.-Y.; Liu, C.W.; Hsu, Y.-J.; Chen, J.-S.; CHEE-WEE LIU |
| 臺大學術典藏 |
2015 |
Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
|
Lin, Y.-W.; Huang, Y.-L.; Hung, J.-H.; Lin, B.-R.; Yang, L.; Wu, C.-H.; Wu, T.-K.; Wu, C.-H.; Peng, L.-H.; CHAO-HSIN WU; Yeh, P.-C.; Yeh, P.-C.;Lin, Y.-W.;Huang, Y.-L.;Hung, J.-H.;Lin, B.-R.;Yang, L.;Wu, C.-H.;Wu, T.-K.;Wu, C.-H.;Peng, L.-H. |
| 臺大學術典藏 |
2020-06-11T06:31:11Z |
Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
|
Yeh, P.-C.;Lin, Y.-W.;Huang, Y.-L.;Hung, J.-H.;Lin, B.-R.;Yang, L.;Wu, C.-H.;Wu, T.-K.;Wu, C.-H.;Peng, L.-H.; Yeh, P.-C.; Lin, Y.-W.; Huang, Y.-L.; Hung, J.-H.; Lin, B.-R.; Yang, L.; Wu, C.-H.; Wu, T.-K.; Wu, C.-H.; Peng, L.-H.; LUNG-HAN PENG |
| 國立交通大學 |
2014-12-08T15:30:30Z |
Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 臺大學術典藏 |
2013 |
Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells
|
VITA PI-HO HU; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 |
| 國立交通大學 |
2014-12-08T15:31:13Z |
Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold Operation
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 臺大學術典藏 |
2020-10-07T01:23:16Z |
Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold Operation
|
VITA PI-HO HU; C.-T. Chuang; P. Su; M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU |
| 國立成功大學 |
2021 |
Threshold Voltage Engineering of Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Different Doping Concentration of in Situ Cl-Doped Al2O3
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Liu, H.-Y.;Lin, C.-W.;Lee, C.-S.;Hsu, W.-C. |
| 國立交通大學 |
2014-12-08T15:24:27Z |
Threshold Voltage Fluctuation in 16-nm-Gate FinFETs Induced by Random Work Function of Nanosized Metal Grain
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Li, Yiming; Cheng, Hui-Wen; Hwang, Chi-Hong |
| 國立交通大學 |
2014-12-16T06:13:57Z |
Threshold voltage measurement device
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Chuang Ching-Te; Jou Shyh-Jye; Lin Geng-Cing; Wang Shao-Cheng; Lin Yi-Wei; Tsai Ming-Chien; Shih Wei-Chiang; Lien Nan-Chun; Lee Kuen-Di; Chu Jyun-Kai |
| 臺大學術典藏 |
2020-06-29T01:15:36Z |
Threshold voltage modulation of enhancement-mode InGaAs schottky-gate Fin-HEMTs
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Chang, L.-C.;Dai, C.-J.;Wu, C.-H.; Chang, L.-C.; Dai, C.-J.; Wu, C.-H.; CHAO-HSIN WU |
Showing items 876001-876025 of 2348685 (93948 Page(s) Totally)
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