| 國立交通大學 |
2014-12-08T15:05:36Z |
THRESHOLD SWITCHING TRANSIENT IN METAL A-SI-H C-SI(P-N) (MASS) HETEROJUNCTION DEVICE
|
CHEN, YW; FANG, YK; LEE, HD; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:39:24Z |
Threshold untraceable signature for group communications
|
Chang, TY; Yang, CC; Hwang, MS |
| 亞洲大學 |
2004-04 |
Threshold Untraceable Signature for Group Communications
|
黃明祥;Hwang, Min-Shiang |
| 國立交通大學 |
2018-08-21T05:56:34Z |
Threshold Vacuum Switch (TVS) on 3D-Stackable and 4F(2) Cross-Point Bipolar and Unipolar Resistive Random Access Memory
|
Ho, ChiaHua; Huang, Hsin-Hau; Lee, Ming-Taou; Hsu, Cho-Lun; Lai, Tung-Yen; Chiu, Wen-Cheng; Lee, Meiyi; Chou, Tong-Huan; Yang, Ivy; Chen, Min-Cheng; Wu, Cheng-San; Chiang, Kuang-Hao; Yao, Yong-Der; Hu, Chenming; Yang, Fu-Liang |
| 臺大學術典藏 |
2018-09-10T08:15:11Z |
Threshold voltage and mobility extraction of NBTI degradation of poly-Si thin-film transistors
|
Sun, H.-C.;Huang, C.-F.;Chen, Y.-T.;Wu, T.-Y.;Liu, C.W.;Hsu, Y.-J.;Chen, J.-S.; Sun, H.-C.; Huang, C.-F.; Chen, Y.-T.; Wu, T.-Y.; Liu, C.W.; Hsu, Y.-J.; Chen, J.-S.; CHEE-WEE LIU |
| 臺大學術典藏 |
2015 |
Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
|
Lin, Y.-W.; Huang, Y.-L.; Hung, J.-H.; Lin, B.-R.; Yang, L.; Wu, C.-H.; Wu, T.-K.; Wu, C.-H.; Peng, L.-H.; CHAO-HSIN WU; Yeh, P.-C.; Yeh, P.-C.;Lin, Y.-W.;Huang, Y.-L.;Hung, J.-H.;Lin, B.-R.;Yang, L.;Wu, C.-H.;Wu, T.-K.;Wu, C.-H.;Peng, L.-H. |
| 臺大學術典藏 |
2020-06-11T06:31:11Z |
Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
|
Yeh, P.-C.;Lin, Y.-W.;Huang, Y.-L.;Hung, J.-H.;Lin, B.-R.;Yang, L.;Wu, C.-H.;Wu, T.-K.;Wu, C.-H.;Peng, L.-H.; Yeh, P.-C.; Lin, Y.-W.; Huang, Y.-L.; Hung, J.-H.; Lin, B.-R.; Yang, L.; Wu, C.-H.; Wu, T.-K.; Wu, C.-H.; Peng, L.-H.; LUNG-HAN PENG |
| 國立交通大學 |
2014-12-08T15:30:30Z |
Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 臺大學術典藏 |
2013 |
Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells
|
VITA PI-HO HU; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 |
| 國立交通大學 |
2014-12-08T15:31:13Z |
Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold Operation
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 臺大學術典藏 |
2020-10-07T01:23:16Z |
Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold Operation
|
VITA PI-HO HU; C.-T. Chuang; P. Su; M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU |
| 國立成功大學 |
2021 |
Threshold Voltage Engineering of Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Different Doping Concentration of in Situ Cl-Doped Al2O3
|
Liu, H.-Y.;Lin, C.-W.;Lee, C.-S.;Hsu, W.-C. |
| 國立交通大學 |
2014-12-08T15:24:27Z |
Threshold Voltage Fluctuation in 16-nm-Gate FinFETs Induced by Random Work Function of Nanosized Metal Grain
|
Li, Yiming; Cheng, Hui-Wen; Hwang, Chi-Hong |
| 國立交通大學 |
2014-12-16T06:13:57Z |
Threshold voltage measurement device
|
Chuang Ching-Te; Jou Shyh-Jye; Lin Geng-Cing; Wang Shao-Cheng; Lin Yi-Wei; Tsai Ming-Chien; Shih Wei-Chiang; Lien Nan-Chun; Lee Kuen-Di; Chu Jyun-Kai |
| 臺大學術典藏 |
2020-06-29T01:15:36Z |
Threshold voltage modulation of enhancement-mode InGaAs schottky-gate Fin-HEMTs
|
Chang, L.-C.;Dai, C.-J.;Wu, C.-H.; Chang, L.-C.; Dai, C.-J.; Wu, C.-H.; CHAO-HSIN WU |
| 國立聯合大學 |
2009 |
Threshold voltage of ultrathin gate-insulator MOSFETs
|
Chun-Hsing Shih* and Jhong-Sheng Wang |
| 元智大學 |
2009-03 |
Threshold voltage of ultrathin gate-insulator MOSFETs
|
施君興; 王仲盛 |
| 國立成功大學 |
2024-11 |
Threshold Voltage Stability in AlGaN/GaN MIS-HEMT Structure Under Cryogenic Environment
|
Chen;Yi-Ho;Chu;Fu-Chuan;Uma;M;Aslam;Muhammad;Lee;Yao-Jen;Li;Yiming;Samukawa;Seiji;Wang;Yeong-Her |
| 國立臺灣科技大學 |
2017 |
Threshold-based cooperative communication of energy harvesting active networked tags
|
Mulatu, Mulatu M.A;Chang, L.-C;Han, Y.S;Mengistu, F.G;Tseng, D.-F. |
| 國立交通大學 |
2014-12-08T15:49:10Z |
Threshold-based intra-video synchronization for multimedia communications
|
Liang, ST; Tien, PL; Yuang, MC |
| 臺北市立大學 |
1998 |
Threshold-Based Intra-Video Synchronization for Multimedia Communications
|
LIANG Shin T.; TIEN Po L.; YUANG Maria C.; 梁世聰 |
| 臺大學術典藏 |
2019-12-10T03:23:22Z |
Threshold-based maintenance optimization for pavement infrastructure using hybrid dynamic modeling
|
Chu, J.C.; Li, M.-H.; Chen, S.-C.; CHIH-YUAN CHU |
| 臺大學術典藏 |
2019-12-10T03:23:24Z |
Threshold-based network-level transportation infrastructure management
|
Chu, J.C.; Chen, Y.-J.; CHIH-YUAN CHU |
| 國立成功大學 |
2018-07 |
Threshold-Based Noise Detection and Reduction for Automatic Speech Recognition System in Human-Robot Interactions
|
Lee;Sheng-Chieh;Wang;Jhing-Fa;Chen;Miao-Hia |
| 淡江大學 |
2021-06-14 |
Threshold-Enhanced PROMETHEE Group Decision Support under Uncertainties
|
Shih, Hsu-Shih |
