| 臺大學術典藏 |
2021-08-05T02:37:10Z |
Breakage behavior of gravel rock particles under impact force
|
Zhao H;Liu C;Zhang J;Ge L.; Zhao H; Liu C; Zhang J; Ge L.; YU-NING GE |
| 臺北市立大學 |
2005 |
Breakdown analysis on distributed group communication
|
Wei, W.J.; 魏惠貞; Lee, L.C. |
| 中國文化大學 |
2010-12 |
Breakdown and Reformation of the Intertropical Convergence Zone in a Moist Atmosphere
|
Wang, CC (Wang, Chia-Chi); Chou, C (Chou, Chia); Lee, WL (Lee, We-Liang) |
| 國立臺灣大學 |
2010 |
Breakdown and reformation of the intertropical convergence zone in a moist atmosphere
|
Wang, Chia-Chi; Chou, Chia; Lee, We-Liang |
| 國立聯合大學 |
2004 |
Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress
|
李宜穆, Y. Wu and G. Lucovsky |
| 國立成功大學 |
2002-11 |
Breakdown and stress-induced oxide degradation mechanisms in MOSFETs
|
Chen, J. H.; Wei, C. T.; Hung, S. M.; Wong, Shyh-Chyi; Wang, Yeong-Her |
| 國立臺灣大學 |
2008 |
Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect
|
Su, V.C.; Lin, I.S.; Kuo, J.B.; Lin, G.S.; Chen, D.; Yeh, C.S.; Tsai, C.T.; Ma, M. |
| 臺大學術典藏 |
2018-09-10T07:08:18Z |
Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect
|
I. S. Lin;V. C. Su;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO |
| 亞洲大學 |
2023 |
Breakdown Behavior of a Nitrogen Implanted AlGaN/GaN HEMT Transistor with different Metal Contact Positions
|
RAMYASRI, MOGARALA |
| 國立高雄師範大學 |
2001 |
Breakdown Characteristics of Ultra-thin Gate Oxide ( < 4nm ) in MOS Structure Subjected Substrate Injection
|
Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏 |
| 國立交通大學 |
2014-12-08T15:27:09Z |
Breakdown characteristics of ultra-thin gate oxides caused by plasma charging
|
Chen, CC; Lin, HC; Chang, CY; Chien, CH; Huang, TY |
| 國立臺灣大學 |
2001 |
Breakdown characteristics of ultrathin gate oxides (<4 nm) in metal–oxide–semiconductor structure subjected to substrate injection
|
Huang, Chia-Hong; Hwu, Jenn-Gwo |
| 國立交通大學 |
2014-12-08T15:41:52Z |
Breakdown modes and their evolution in ultrathin gate oxide
|
Lin, HC; Lee, DY; Huang, TY |
| 國立成功大學 |
2015-03-30 |
Breakdown of Bose-Einstein Distribution in Photonic Crystals
|
Lo, Ping-Yuan; Xiong, Heng-Na; Zhang, Wei-Min |
| 臺大學術典藏 |
2020-05-22T05:37:20Z |
Breakdown of Fourier’s Law in Nanotube Thermal Conductors
|
Chang, C.W.; Okawa, D.; Garcia, H.; Majumdar, A.; Zettl, A. |
| 淡江大學 |
1995-07-20 |
Breakdown of Rigid-Unit vibrations in layered semiconductors under pressure : application to germanium sulfide
|
Hsueh, H.C. |
| 國立成功大學 |
2014-02 |
Breakdown of the Bretherton law due to wall slippage
|
Li, Yen-Ching; Liao, Ying-Chih; Wen, Ten-Chin; Wei, Hsien-Hung |
| 臺大學術典藏 |
2018-09-10T14:54:37Z |
Breakdown of the Bretherton law due to wall slippage
|
Li, Y.-C.; Liao, Y.-C.; Wen, T.-C.; Wei, H.-H.; YING-CHIH LIAO |
| 國立暨南國際大學 |
2008 |
Breakdown spots propagation in ultra-thin SiO2 films under repetitive ramped voltage stress using conductive atomic force microscopy
|
林式庭?; Lin, ST |
| 國立暨南國際大學 |
2008 |
Breakdown spots propagation in ultra-thin SiO2 films under repetitive ramped voltage stress using conductive atomic force microscopy
|
吳幼麟?; Wu, YL |
| 國立臺灣大學 |
1982 |
Breakdown Voltage of Junction Passivated Power Rectifier
|
林浩雄; Hwang, C. C.; 胡振國; Chiou, Y. L.; Lin, Hao-Hsiung; Hwang, C. C.; Hwu, Jenn-Gwo; Chiou, Y. L. |
| 國立成功大學 |
2016-08-18 |
Breakdown voltage walkout resulting from hot-carrier-induced interface states in n-type LDMOS transistors
|
Chen, J. F.; Feng, Y. -S. |
| 國立交通大學 |
2014-12-08T15:06:31Z |
BREAKDOWN-INITIATED NEGATIVE-RESISTANCE DEVICE WITH MOST-TRANSISTOR STRUCTURE
|
YU, GJ; TSAI, C; YU, SY |
| 亞洲大學 |
2007-09 |
Breakfast consumption, body mass index, and body fat percentage among colloge students in Taiwan.
|
蒙美津;Mong, Mei-Chin;蒙美津;Mong, Mei-Chin |
| 亞洲大學 |
2007.09 |
Breakfast consumption, body mass index, and body fat percentage among colloge students in Taiwan.
|
蒙美津;Mong, Mei-Chin |
