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Institution	Date	Title	Author
亞洲大學	2023	Breakdown Behavior of a Nitrogen Implanted AlGaN/GaN HEMT Transistor with different Metal Contact Positions	RAMYASRI, MOGARALA
國立高雄師範大學	2001	Breakdown Characteristics of Ultra-thin Gate Oxide ( < 4nm ) in MOS Structure Subjected Substrate Injection	Chia-Hong Huang;Jenn-Gwo Hwu; 黃嘉宏
國立交通大學	2014-12-08T15:27:09Z	Breakdown characteristics of ultra-thin gate oxides caused by plasma charging	Chen, CC; Lin, HC; Chang, CY; Chien, CH; Huang, TY
國立臺灣大學	2001	Breakdown characteristics of ultrathin gate oxides (<4 nm) in metal–oxide–semiconductor structure subjected to substrate injection	Huang, Chia-Hong; Hwu, Jenn-Gwo
國立交通大學	2014-12-08T15:41:52Z	Breakdown modes and their evolution in ultrathin gate oxide	Lin, HC; Lee, DY; Huang, TY
國立成功大學	2015-03-30	Breakdown of Bose-Einstein Distribution in Photonic Crystals	Lo, Ping-Yuan; Xiong, Heng-Na; Zhang, Wei-Min
臺大學術典藏	2020-05-22T05:37:20Z	Breakdown of Fourier’s Law in Nanotube Thermal Conductors	Chang, C.W.; Okawa, D.; Garcia, H.; Majumdar, A.; Zettl, A.
淡江大學	1995-07-20	Breakdown of Rigid-Unit vibrations in layered semiconductors under pressure : application to germanium sulfide	Hsueh, H.C.
國立成功大學	2014-02	Breakdown of the Bretherton law due to wall slippage	Li, Yen-Ching; Liao, Ying-Chih; Wen, Ten-Chin; Wei, Hsien-Hung
臺大學術典藏	2018-09-10T14:54:37Z	Breakdown of the Bretherton law due to wallÂ slippage	Li, Y.-C.; Liao, Y.-C.; Wen, T.-C.; Wei, H.-H.; YING-CHIH LIAO

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