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Showing items 438876-438900 of 2310554  (92423 Page(s) Totally)
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Institution Date Title Author
義守大學 2011 GaAs pHEMT射頻切換開關的特性分析 李威儂; Wei-Nung Li
國立交通大學 2015-07-21T08:28:30Z GaAs Polariton Interference in Magnetic Field: Oblique Incident Ellipsometry Measurement Su, Sheng-Kai; Voskoboynikov, Oleksandr; Li, Liang-Chen; Suen, Yuen-Wuu; Lee, Chien-Ping
元智大學 2006-09 GaAs power pHEMT characterization for extracting nonlinear parameters of drain current by harmonic measurement 陳冠宇; 黃建彰
元智大學 2006-09 GaAs power pHEMT characterization for extracting nonlinear parameters of drain current by harmonic measurement 陳冠宇; 黃建彰
臺大學術典藏 2018-09-10T05:56:11Z GaAs surface passivation using in-situ oxide deposition Passlack, M;Hong, M;Opila, RL;Mannaerts, JP;Kwo, JR; Passlack, M; Hong, M; Opila, RL; Mannaerts, JP; Kwo, JR; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:32Z GaAs surface reconstruction obtained using a dry process Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG
國立高雄師範大學 1995 GaAs tristep low-low doping channel field effect transistor Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu;Wen-Shiung Lour;Yuan-Tzu Liu;Rong-Chau Liu; 蔡榮輝
中州科技大學 2012-12 GaAs 發光二極體元件的工作特性模擬分析 姚凱瀚, 陳奕豪,徐守棟
國立成功大學 2002 GaAs(N11)A/B 基板上成長之InGaAs 量子點其光學性質,壓電效應,表層厚度與空間分析之研究(2/2) 田興龍
國立臺灣大學 1993 GaAs-AlxGa1-xAs系統電子及電網Subband Energy之度量 張顏暉; Chang, Yuan-Huei
臺大學術典藏 2018-09-10T07:02:54Z GaAs-based bipolar cascade light-emitting-diodes and superluminescent- diodes at the 1.04-μm wavelength regime Guol, S.-H. and Wang Jr., H. and Wu, Y.-H. and Lin, W. and Yang, Y.-J. and Sun, C.-K. and Pan, C.-L. and Shi, J.-W.; CHI-KUANG SUN
臺大學術典藏 2018-09-10T03:29:19Z GaAs-based long-wavelength traveling-wave photodetector Shi, Jin-Wei; Sun, Chi-Kuang; Yang, Ying-Jay; Chiu, Yi-Jen; Bowers, John E.; CHI-KUANG SUN
臺大學術典藏 2018-09-10T03:51:07Z GaAs-based long-wavelength traveling-wave photodetector Y. J. Yang,; J. E. Bowers; YING-JAY YANG; J.-W. Shi; K.-G. Gan; Y.-J. Chiu; C.-K. Sun
臺大學術典藏 2019-12-27T07:49:50Z GaAs-based metal-oxide semiconductor field-effect transistors with Al 2 O 3 gate dielectrics grown by atomic layer deposition Ye, P.D.; Wilk, G.D.; Yang, B.; Kwo, J.; Gossmann, H.-J.L.; Frei, M.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:51:58Z GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:31:33Z GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG
南台科技大學 2021-11 GaAs-Based p-i-n Narrow Bandpass 850 nm IR Photodetector With a p-AlGaAs Filter Layer Chun-Kai Wang;Yu-Zung Chiou;Yi-Lo Huang
臺大學術典藏 2018-09-10T07:35:54Z GaAs-based transverse junction superluminescent diode at 1.1um wavelength region Guol, S.-H.;Chou, M.-G.;Wang, J.-H.;Yang, Y.-J.;Sun, C.-K.;Shi, J.-W.; Guol, S.-H.; Chou, M.-G.; Wang, J.-H.; Yang, Y.-J.; Sun, C.-K.; Shi, J.-W.; CHI-KUANG SUN
臺大學術典藏 2018-09-10T08:14:03Z GaAs-based transverse junction superluminescent diodes with strain-compensated InGaAs-GaAsP multiple-quantum-wells at 1.1-μm wavelength Guol, S.-H.;Chou, M.-G.;Yang, Y.-J.;Sun, C.-K.;Shi, J.-W.; Guol, S.-H.; Chou, M.-G.; Yang, Y.-J.; Sun, C.-K.; Shi, J.-W.; CHI-KUANG SUN
臺大學術典藏 2010 GaAs-Based Transverse Junction Superluminescent Diodes with Strain-Compensated InGaAs/GaAsP Multiple-Quantum-Wells at 1.1μm Wavelength Guol, Shi-Hao; Chou, Ming-Ge; Yang, Ying-Jay; Sun, Chi-Kuang; Shi, Jin-Wei; Guol, Shi-Hao; Chou, Ming-Ge; Yang, Ying-Jay; Sun, Chi-Kuang; Shi, Jin-Wei
國立臺灣大學 2010 GaAs-Based Transverse Junction Superluminescent Diodes with Strain-Compensated InGaAs/GaAsP Multiple-Quantum-Wells at 1.1μm Wavelength Guol, Shi-Hao; Chou, Ming-Ge; Yang, Ying-Jay; Sun, Chi-Kuang; Shi, Jin-Wei
國立成功大學 1999 GAAS-BASED 微波主動元件之研究 蘇炎坤; 王永和; 王瑞祿
國立成功大學 1999 GaAs-Based 微波主動元件之研究-子計劃二:PHEMT 微波功率元件之研究 王永和
國立成功大學 1999 GAAS-BASED 微波主動元件之研究-子計畫一:HBT 高頻元件之研製 蘇炎坤
國立高雄師範大學 1998-08 GaAs-Based微波主動元件之研究---子計畫III:HBT高頻元件等效電路之研究 王瑞祿; Ruey-Lue Wang

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