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Institution	Date	Title	Author
國立臺灣大學	2008	GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength	Wang, Cheng-Yin; Chen, Liang-Yi; Chen, Cheng-Pin; Cheng, Yun-Wei; Ke, Min-Yung; Hsieh, Min-Yann; Wu, Han-Ming; Peng, Lung-Han; Huang, JianJang
國立成功大學	2013-04	GaN Nanowire Field Emitters With the Adsorption of Au Nanoparticles	Tsai, Tsung-Ying; Chang, Shoou-Jinn; Weng, Wen-Yin; Li, Shuguang; Liu, Shin; Hsu, Cheng-Liang; Hsueh, Han-Ting; Hsueh, Ting-Jen
臺大學術典藏	2018-09-10T07:34:17Z	GaN on Si with nm-thick single-crystal Sc 2 O 3 as a template using molecular beam epitaxy	Lee, WC;Lee, YJ;Kwo, J;Hsu, CH;Lee, CH;Wu, SY;Ng, HM;Hong, M; Lee, WC; Lee, YJ; Kwo, J; Hsu, CH; Lee, CH; Wu, SY; Ng, HM; Hong, M; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:37Z	GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy	Lee, W.C.;Lee, Y.J.;Kwo, J.;Hsu, C.H.;Lee, C.H.;Wu, S.Y.;Ng, H.M.;Hong, M.; Lee, W.C.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, C.H.; Wu, S.Y.; Ng, H.M.; Hong, M.; MINGHWEI HONG
國立交通大學	2014-12-08T15:12:23Z	GaN p-i-n photodetectors with an LT-GaN interlayer	Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Lan, C. H.; Huang, C. C.; Lin, W. J.; Cheng, Y. C.
國立成功大學	2008-04	GaN p-i-n photodetectors with an LT-GaN interlayer	Lin, J. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Lan, W. H.; Huang, K. C.; Chen, W. R.; Lan, C. H.; Huang, C. C.; Lin, W. J.; Cheng, Y. C.
國立成功大學	2002-12	GaN p-n junction diode formed by Si ion implantation into p-GaN	Lee, M. L.; Sheu, Jinn-Kong; Yeh, L. S.; Tsai, M. S.; Kao, C. J.; Tun, Chun-Ju; Chang, Shoou-Jinn; Chi, Gou-Chung
南台科技大學	2004	GaN Photodetectors with Transparent Indium Tin Oxide Electrodes	唐經洲; Jing-Jou Tang;邱裕中; Yu-Zung Chiou
南台科技大學	2004-03	GaN Photodetectors with Transparent Indium Tin Oxide Electrodes	Yu-Zung Chiou; Jing-Jou Tang
臺大學術典藏	2018-09-10T08:17:45Z	GaN Photonic Crystal Membrane Laser	Cheng-Hung Lin,;Jyh-Yang Wang,;Cheng-Yen Chen,;Kun-Ching Shen,;Dong-Ming Yeh,;Yean-Woei Kiang,;C. C. Yang,; Cheng-Hung Lin,; Jyh-Yang Wang,; Cheng-Yen Chen,; Kun-Ching Shen,; Dong-Ming Yeh,; Yean-Woei Kiang,; C. C. Yang,; YEAN-WOEI KIANG
南台科技大學	2002	GaN p–n junction diode formed by Si ion implantation into p-GaN	李明倫; M. L. Lee; J. K. Sheu; L. S. Yeh; M. S. Tsai; C. J. Kao; C. J. Tun; S. J. Chang; G. C. Chi
國立交通大學	2018-08-21T05:53:05Z	GaN Schottky Barrier Diodes on Free-Standing GaN Wafer	Liu, Xinke; Gu, Hong; Li, Kuilong; Wang, Jianfeng; Wang, Lei; Kuo, Hao-Chung; Liu, Wenjun; Chen, Lin; Fang, Jianping; Liu, Meihua; Lin, Xinnan; Xu, Ke; Ao, Jin-Ping
國立臺灣科技大學	2010	GaN schottky barrier photodetectors prepared on patterned sapphire substrate	Chang S.J.; Wang S.M.; Chen T.P.; Young S.J.; Lin Y.C.; Wu S.L.; Huang B.R.
國立成功大學	2012-11	GaN Schottky Barrier Photodetectors with a beta-Ga2O3 Cap Layer	Huang, Zhen-Da; Chuang, Ricky Wenkuei; Weng, Wen-Yin; Chang, Shoou-Jinn; Chiu, Chiu-Jung; Wu, San-Lein
國立成功大學	2011-11	GaN Schottky barrier photodetectors with a lattice matched Al0.82In0.18N intermediate layer	Huang, Z.-D.;Weng, W.-Y.;Chang, S.-J.;Jung, S.-C.;Chiu, C.-J.;Hsueh, T.-J.;Lai, W.-C.;Wu, S.-L.
實踐大學	2011	GaN Schottky barrier photodetectors with a lattice-matched Al 0.82In0.18 intermediate layer	Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L.
實踐大學	2011	GaN Schottky Barrier Photodetectors With a Lattice-Matched Al0.82In0.18N Intermediate Layer	Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L.
南台科技大學	2003	GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	李明倫; M. L. Lee; J. K. Sheu; W. C. Lai; S. J. Chang; Y. K. Su; M. G. Chen; C. J. Kao; J. M. Tsai; G. C. Chi
南台科技大學	2003	GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	李明倫; M. L. Lee; J. K. Sheu; C. J. Kao; M. C. Chen; C. J. Tun; W. C. Lai; Y. K. Su; S.J. Chang; G. C. Chi
國立成功大學	2003-04-28	GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	Lee, M. L.; Sheu, J. K.; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M.
國立成功大學	2007-09-03	GaN Schottky barrier photodetectors with SiN/GaN nucleation layer	Jhou, Y. D.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, Y. Y.; Liu, C. H.; Lee, H. C.
臺大學術典藏	2021-02-26T08:43:37Z	GaN Schottky contact on the Pattern Sapphire Substrate with Reducted threading dislocation	Lee, C.-C.; Chien, C.-Y.; Cheng, W.I.; Yen, C.-W.; Hu, P.-Y.; Kuan, C.-H.; CHIEH-HSIUNG KUAN
國立成功大學	2012	GaN Schottky Diode with TiW Electrodes on Silicon Substrate Based on AlN/AlGaN Buffer Layer	Chang, Sheng-Po
國立成功大學	2008-03-31	GaN Schottky photodiodes with annealed Ir/Pt semi-transparent contacts	Chang, Ping-Chuan; Yu, Chia-Lin; Chang, Shoou-Jinn; Liu, C. H.
國立臺灣海洋大學	2009	GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration	Shao-Yen Chiu;Kun-Chieh Liang;Tze-Hsuan Huang;Kang-Ping Liu;Hsuan-Wei Huang;Jung-Hui Tsai;Wen-Shiung Lour

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