| 臺大學術典藏 |
2020-03-02T06:05:18Z |
GATA3 interacts with and stabilizes HIF-1α to enhance cancer cell invasiveness
|
Lin M.-C.; Lin J.-J.; Hsu C.-L.; Juan H.-F.; Lou P.-J.; MIN-CHUAN HUANG |
| 臺大學術典藏 |
2020-02-06T10:53:27Z |
GATA3 interacts with and stabilizes HIF-1α to enhance cancer cell invasiveness
|
Lin M.-C.;Jing-Jer Lin;Hsu C.-L.;Juan H.-F.;Lou P.-J.;Huang M.-C.; Lin M.-C.; JING-JER LIN; Hsu C.-L.; Juan H.-F.; Lou P.-J.; Huang M.-C. |
| 臺大學術典藏 |
2020-02-13T07:58:38Z |
GATA3 interacts with and stabilizes HIF-1α to enhance cancer cell invasiveness
|
MEI-CHUN LIN; Lin J.-J.; Hsu C.-L.; Juan H.-F.; Lou P.-J.; Huang M.-C. |
| 臺大學術典藏 |
2020-10-27T12:04:16Z |
GATA3 interacts with and stabilizes HIF-1α to enhance cancer cell invasiveness
|
Lin M.-C; Lin J.-J; Hsu C.-L; Juan H.-F; PEI-JEN LOU; Huang M.-C. |
| 臺大學術典藏 |
2021-09-15T01:20:54Z |
GATA3 interacts with and stabilizes HIF-1α to enhance cancer cell invasiveness
|
Lin M.-C.; Lin J.-J.; CHIA-LANG HSU; Juan H.-F.; Lou P.-J.; Huang M.-C. |
| 國家衛生研究院 |
2018-07 |
GATA3 mutation of luminal-type breast cancer patients in Taiwan
|
Tsai, SF |
| 國立交通大學 |
2014-12-08T15:04:43Z |
GATE AND DRAIN CURRENTS IN OFF-STATE BURIED-TYPE P-CHANNEL LDD MOSFETS
|
CHEN, MJ; CHAO, KC; HUANG, TH; TSAUR, JM |
| 臺大學術典藏 |
1991 |
Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments.
|
Hwu, Jenn-Gwo; Lin, J. J.; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J. |
| 國立臺灣大學 |
1991 |
Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments.
|
胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J. |
| 國立臺灣海洋大學 |
2016 |
Gate automation system evaluation: A case of a container number recognition system in port terminals
|
Shih-Liang Chao;Ya-Lan Lin |
| 國立臺灣海洋大學 |
2017 |
Gate automation system evaluation: A case of a container number recognition system in port terminals
|
Ya-Lan Lin;Shih-Liang Chao |
| 國立臺灣大學 |
2006 |
Gate capacitances behavior of nanometer FD SOI CMOS devices with HfO2 high-k gate dielectric considering vertical and fringing displacement effects using 2-D Simulation
|
Lin, Yu-Sheng; Lin, Chia-Hong; Kuo, J.B.; Su, Ke-Wei |
| 臺大學術典藏 |
2018-09-10T06:02:15Z |
Gate capacitances behavior of nanometer FD SOI CMOS devices with HfO2 high-k gate dielectric considering vertical and fringing displacement effects using 2-D simulation
|
Y. S. Lin; C. H. Lin; J. B. Kuo; K. W. Su; JAMES-B KUO |
| 國立交通大學 |
2014-12-16T06:14:10Z |
Gate controlled field emission triode and process for fabricating the same
|
Lee Chia-Ying; Li Seu-Yi; Lin Pang; Tseng Tseung-Yuan |
| 國立交通大學 |
2014-12-16T06:14:25Z |
Gate controlled field emission triode and process for fabricating the same
|
Tseng; Tseung-Yuen; Lee; Chia-Ying; Li; Seu-Yi; Lin; Pang |
| 國立交通大學 |
2014-12-16T06:15:47Z |
Gate controlled field emission triode and process for fabricating the same
|
Tseng, Tseung-Yuan; Lee, Chia-Ying; Li, Seu-Yi; Lin, Pang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-16T06:16:01Z |
Gate controlled field emission triode and process for fabricating the same
|
Tseng, Tseung-Yuen; Lee, Chia-Ying; Li, Seu-Yi; Lin, Pang |
| 國立成功大學 |
2008-07-31 |
Gate current dependent hot-carrier-induced degradation in LDMOS transistors
|
Chen, Jone F.; Tian, Kuen-Shiuan; Chen, Shiang-Yu; Lee, J. R.; Wu, Kuo-Ming; Huang, T. Y.; Liu, C. M. |
| 國立交通大學 |
2015-07-21T08:31:06Z |
Gate Current Variation: A New Theory and Practice on Investigating the Off-State Leakage of Trigate MOSFETs and the Power Dissipation of SRAM
|
Hsieh, E. R.; Lin, S. T.; Chung, Steve S.; Huang, R. M.; Tsai, C. T.; Jung, L. T. |
| 國立交通大學 |
2014-12-16T06:16:04Z |
GATE DIELECTRIC STRUCTURE AND AN ORGANIC THIN FILM TRANSISTOR BASED THEREON
|
Chen, Fang-Chung; Chuang, Chiao-Shun; Lin, Yung-Sheng |
| 國立交通大學 |
2014-12-08T15:37:53Z |
Gate Direct Tunneling Current in Uniaxially Compressive Strained nMOSFETs: A Sensitive Measure of Electron Piezo Effective Mass
|
Lee, Wei-Han; Chen, Ming-Jer |
| 臺大學術典藏 |
2018-09-10T06:37:17Z |
Gate Drive for GTO Devices
|
S. Chin;D. Y. Chen; S. Chin; D. Y. Chen; DAN CHEN |
| 國立成功大學 |
2017-08 |
Gate Driver Based on a-Si:H Thin-Film Transistors With Two-Step-Bootstrapping Structure for High-Resolution and High-Frame-Rate Displays
|
Lin;Chih-Lung;Chen;Fu-Hsing;Wang;Ming-Xun;Lai;Po-Cheng;Tseng;Chin-Hsien |
| 國立成功大學 |
2016-11 |
Gate Driver Circuit Using Pre-Charge Structure and Time-Division Multiplexing Driving Scheme for Active-Matrix LCDs Integrated with In-Cell Touch Structures
|
Lin, Chih-Lung; Deng, Ming-Yang; Wu, Chia-En; Chen, Po-Syun; Wang, Ming-Xun |
| 國立成功大學 |
2017 |
Gate driver circuit with fast-falling structure for high-resolution applications
|
Tseng, C.-H.;Chen, F.-H.;Lai, P.-C.;Lin, C.-L. |
| 國立成功大學 |
2023 |
Gate Driver Design and Device Characterization for 3.3 kV SiC MOSFET Modules
|
Gutierrez, B.;Hou, Z.;Jiao, D.;Hsieh, Hsieh H.-C.;Chen, X.;Liao, H.;Lai, J.-S.;Yu, M.-H.;Chen, K.-W. |
| 國立交通大學 |
2018-03-01 |
GATE DRIVING CIRCUIT
|
Yu-Fan Tu; Guang-Ting Zheng; Po-Tsun Liu; Wen-Che Wang; Yuan-Hao Chang; Chi-Liang Kuo; Wen-Chuan Wang; Han-Lung Liu; Wei-Lien Sung |
| 國立暨南國際大學 |
2013 |
Gate field induced ordered electric dipoles in a polymer dielectric for low-voltage operating organic thin-film transistors
|
Chen, JH |
| 國立成功大學 |
2013 |
Gate field induced ordered electric dipoles in a polymer dielectric for low-voltage operating organic thin-film transistors
|
Chou, Wei-Yang; Ho, Tsung-Yeh; Cheng, Horng-Long; Tang, Fu-Ching; Chen, Jiann Heng; Wang, Yu-Wu |
| 國立成功大學 |
2016-02 |
Gate Insulator Morphology-Dependent Reliability in Organic Thin-Film Transistors
|
Chen, Hua-Mao; Chang, Ting-Chang; Tai, Ya-Hsiang; Chiang, Hsiao-Cheng; Liu, Kuan-Hsien; Chen, Min-Chen; Huang, Cheng-Chieh; Lee, Chao-Kuei |
| 國立交通大學 |
2017-04-21T06:55:43Z |
Gate Insulator Morphology-Dependent Reliability in Organic Thin-Film Transistors
|
Chen, Hua-Mao; Chang, Ting-Chang; Tai, Ya-Hsiang; Chiang, Hsiao-Cheng; Liu, Kuan-Hsien; Chen, Min-Chen; Huang, Cheng-Chieh; Lee, Chao-Kuei |
| 臺大學術典藏 |
2018-09-10T04:28:26Z |
Gate leakage suppression and contact engineering in nitride heterostructures
|
Wu, YR; Singh, M; Singh, J; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T04:59:04Z |
Gate Misalignment Effect Related Capacitance Behavior of a 100nm DG FD SOI NMOS Device with n+/p+ Poly Top/Bottom Gate
|
C. H. Hsu; C. P. Yang; JAMES-B KUO; J. B. Kuo |
| 國立成功大學 |
2020 |
Gate operation for habitat-oriented water management at Budai Salt Pan Wetland in Taiwan
|
Wang, H.-W.;Kuo, P.-H.;Dodd, A.E. |
| 國立交通大學 |
2014-12-16T06:14:04Z |
Gate oxide breakdown-withstanding power switch structure
|
Yang Hao-I; Chuang Ching-Te; Hwang Wei |
| 國立交通大學 |
2014-12-16T06:15:14Z |
GATE OXIDE BREAKDOWN-WITHSTANDING POWER SWITCH STRUCTURE
|
YANG Hao-I; Chuang Ching-Te; Hwang Wei |
| 國立交通大學 |
2014-12-08T15:45:36Z |
Gate oxide integrity of thermal oxide grown on high temperature formed Si0.3Ge0.7
|
Wu, YH; Chin, A |
| 國立臺灣大學 |
2010 |
Gate oxide wear out using novel polysilazane-base inorganic as nano-scaling shallow trench filling
|
Ho, Ching Yuan; Shih, Kai-Yao; He, Jr Hau |
| 中原大學 |
2010-04 |
Gate Oxide Weat out Using Novel Polysilazane-base Inorganic as Nano-scaling Shallow Trench Filling
|
Ching Yuan. Ho;Kai-Yao.Shih ; jr Hau He, |
| 國立交通大學 |
2014-12-08T15:27:45Z |
Gate oxynitride grown in N2O and annealed in no using rapid thermal processing
|
Sun, SC; Chen, CH; Lou, JC; Yen, LW; Lin, CJ |
| 國立交通大學 |
2014-12-08T15:36:34Z |
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
|
Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2019-04-02T06:00:51Z |
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
|
Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2015-12-04T07:03:12Z |
GATE STRUCTURE
|
CHANG Yi; KUO Chien-I; HSU Heng-Tung |
| 國立成功大學 |
2017 |
Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT
|
Liu, H.-Y.;Lee, C.-S.;Lin, C.-W.;Chiang, M.-H.;Hsu, W.-C. |
| 國立交通大學 |
2014-12-16T06:16:19Z |
Gate structure of metal oxide semiconductor field effect transistor
|
Bing-Yue, Tsui; Chih-Feng, Huang |
| 國立交通大學 |
2019-04-03T06:43:59Z |
Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La2/3Sr1/3MnO3 thin film
|
Chiu, Shao-Pin; Yamanouchi, Michihiko; Oyamada, Tatsuro; Ohta, Hiromichi; Lin, Juhn-Jong |
| 臺大學術典藏 |
2018-09-10T08:18:06Z |
Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect
|
H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO |
| 臺大學術典藏 |
2018-09-10T07:41:37Z |
Gate Tunneling Leakage Current Behavior of 40nm PD SOI NMOS Device Considerign the Floating Body Effect
|
H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO |
| 國立高雄師範大學 |
2010 |
Gate voltage swing enhancement of an InGaP/InGaAs pseudomorphic HFET with low-to-high double doping channels
|
Jung-Hui Tsai;Wen-Shiung Lour;Chia-Hua Huang;Sheng-Shiun Ye;Yung-Chun Ma; 蔡榮輝 |
| 國立臺灣海洋大學 |
2010-10-28 |
Gate voltage swing enhancement of InGaP/ InGaAs pseudomorphic HFET with low-to-high double doping channels
|
J.-H. Tsai; W.-S. Lour; C.-H. Huang; S.-S. Ye; Y.-C. Ma |
