| 臺大學術典藏 |
2020-03-02T06:05:18Z |
GATA3 interacts with and stabilizes HIF-1α to enhance cancer cell invasiveness
|
Lin M.-C.; Lin J.-J.; Hsu C.-L.; Juan H.-F.; Lou P.-J.; MIN-CHUAN HUANG |
| 臺大學術典藏 |
2020-02-06T10:53:27Z |
GATA3 interacts with and stabilizes HIF-1α to enhance cancer cell invasiveness
|
Lin M.-C.;Jing-Jer Lin;Hsu C.-L.;Juan H.-F.;Lou P.-J.;Huang M.-C.; Lin M.-C.; JING-JER LIN; Hsu C.-L.; Juan H.-F.; Lou P.-J.; Huang M.-C. |
| 臺大學術典藏 |
2020-02-13T07:58:38Z |
GATA3 interacts with and stabilizes HIF-1α to enhance cancer cell invasiveness
|
MEI-CHUN LIN; Lin J.-J.; Hsu C.-L.; Juan H.-F.; Lou P.-J.; Huang M.-C. |
| 臺大學術典藏 |
2020-10-27T12:04:16Z |
GATA3 interacts with and stabilizes HIF-1α to enhance cancer cell invasiveness
|
Lin M.-C; Lin J.-J; Hsu C.-L; Juan H.-F; PEI-JEN LOU; Huang M.-C. |
| 臺大學術典藏 |
2021-09-15T01:20:54Z |
GATA3 interacts with and stabilizes HIF-1α to enhance cancer cell invasiveness
|
Lin M.-C.; Lin J.-J.; CHIA-LANG HSU; Juan H.-F.; Lou P.-J.; Huang M.-C. |
| 國家衛生研究院 |
2018-07 |
GATA3 mutation of luminal-type breast cancer patients in Taiwan
|
Tsai, SF |
| 國立交通大學 |
2014-12-08T15:04:43Z |
GATE AND DRAIN CURRENTS IN OFF-STATE BURIED-TYPE P-CHANNEL LDD MOSFETS
|
CHEN, MJ; CHAO, KC; HUANG, TH; TSAUR, JM |
| 臺大學術典藏 |
1991 |
Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments.
|
Hwu, Jenn-Gwo; Lin, J. J.; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J. |
| 國立臺灣大學 |
1991 |
Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments.
|
胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J. |
| 國立臺灣海洋大學 |
2016 |
Gate automation system evaluation: A case of a container number recognition system in port terminals
|
Shih-Liang Chao;Ya-Lan Lin |
| 國立臺灣海洋大學 |
2017 |
Gate automation system evaluation: A case of a container number recognition system in port terminals
|
Ya-Lan Lin;Shih-Liang Chao |
| 國立臺灣大學 |
2006 |
Gate capacitances behavior of nanometer FD SOI CMOS devices with HfO2 high-k gate dielectric considering vertical and fringing displacement effects using 2-D Simulation
|
Lin, Yu-Sheng; Lin, Chia-Hong; Kuo, J.B.; Su, Ke-Wei |
| 臺大學術典藏 |
2018-09-10T06:02:15Z |
Gate capacitances behavior of nanometer FD SOI CMOS devices with HfO2 high-k gate dielectric considering vertical and fringing displacement effects using 2-D simulation
|
Y. S. Lin; C. H. Lin; J. B. Kuo; K. W. Su; JAMES-B KUO |
| 國立交通大學 |
2014-12-16T06:14:10Z |
Gate controlled field emission triode and process for fabricating the same
|
Lee Chia-Ying; Li Seu-Yi; Lin Pang; Tseng Tseung-Yuan |
| 國立交通大學 |
2014-12-16T06:14:25Z |
Gate controlled field emission triode and process for fabricating the same
|
Tseng; Tseung-Yuen; Lee; Chia-Ying; Li; Seu-Yi; Lin; Pang |
| 國立交通大學 |
2014-12-16T06:15:47Z |
Gate controlled field emission triode and process for fabricating the same
|
Tseng, Tseung-Yuan; Lee, Chia-Ying; Li, Seu-Yi; Lin, Pang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-16T06:16:01Z |
Gate controlled field emission triode and process for fabricating the same
|
Tseng, Tseung-Yuen; Lee, Chia-Ying; Li, Seu-Yi; Lin, Pang |
| 國立成功大學 |
2008-07-31 |
Gate current dependent hot-carrier-induced degradation in LDMOS transistors
|
Chen, Jone F.; Tian, Kuen-Shiuan; Chen, Shiang-Yu; Lee, J. R.; Wu, Kuo-Ming; Huang, T. Y.; Liu, C. M. |
| 國立交通大學 |
2015-07-21T08:31:06Z |
Gate Current Variation: A New Theory and Practice on Investigating the Off-State Leakage of Trigate MOSFETs and the Power Dissipation of SRAM
|
Hsieh, E. R.; Lin, S. T.; Chung, Steve S.; Huang, R. M.; Tsai, C. T.; Jung, L. T. |
| 國立交通大學 |
2014-12-16T06:16:04Z |
GATE DIELECTRIC STRUCTURE AND AN ORGANIC THIN FILM TRANSISTOR BASED THEREON
|
Chen, Fang-Chung; Chuang, Chiao-Shun; Lin, Yung-Sheng |
| 國立交通大學 |
2014-12-08T15:37:53Z |
Gate Direct Tunneling Current in Uniaxially Compressive Strained nMOSFETs: A Sensitive Measure of Electron Piezo Effective Mass
|
Lee, Wei-Han; Chen, Ming-Jer |
| 臺大學術典藏 |
2018-09-10T06:37:17Z |
Gate Drive for GTO Devices
|
S. Chin;D. Y. Chen; S. Chin; D. Y. Chen; DAN CHEN |
| 國立成功大學 |
2017-08 |
Gate Driver Based on a-Si:H Thin-Film Transistors With Two-Step-Bootstrapping Structure for High-Resolution and High-Frame-Rate Displays
|
Lin;Chih-Lung;Chen;Fu-Hsing;Wang;Ming-Xun;Lai;Po-Cheng;Tseng;Chin-Hsien |
| 國立成功大學 |
2016-11 |
Gate Driver Circuit Using Pre-Charge Structure and Time-Division Multiplexing Driving Scheme for Active-Matrix LCDs Integrated with In-Cell Touch Structures
|
Lin, Chih-Lung; Deng, Ming-Yang; Wu, Chia-En; Chen, Po-Syun; Wang, Ming-Xun |
| 國立成功大學 |
2017 |
Gate driver circuit with fast-falling structure for high-resolution applications
|
Tseng, C.-H.;Chen, F.-H.;Lai, P.-C.;Lin, C.-L. |
