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Institution	Date	Title	Author
國立臺灣大學	2005	GDQ Method for Natural Convection in a Square Cavity Using Velocity-vorticity Formulation	Lo, D. C.; Young, D.L.; Murugesan, K.
國立成功大學	2022-08-10	GDSII 數據流轉碼至數位微影系統之曝光速度最佳化研究	馮昱翔; Feng, Yu-Hsiang
國立屏東大學	2022	GdTbCo於不同光能量下的磁化翻轉行為	陳冠勲; CHEN, GUAN-XUN
淡江大學	2009-10	GDTV-Jahrestagung im Oktober 2007 an der Tamkang Universitaet: Transnationales Deutsch (Teilnahme und Moderation der letzten Sektion)	施莫尼
臺大學術典藏	2020-06-11T06:39:43Z	Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP	Wu, H.-M.;Tsai, S.-J.;Ho, H.-I.;Lin, H.-H.; Wu, H.-M.; Tsai, S.-J.; Ho, H.-I.; Lin, H.-H.; HAO-HSIUNG LIN
國立交通大學	2017-04-21T06:48:53Z	Ge Channel MOSFETs Directly on Silicon	Chen, Che Wei; Chung, Cheng-Ting; Chien, Chao Hsin
國立交通大學	2014-12-08T15:30:25Z	Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrations	Tang, Shih-Hsuan; Kuo, Chien-I; Trinh, Hai-Dang; Chang, Edward Yi; Nguyen, Hong-Quan; Nguyen, Chi-Lang; Luo, Guang-Li
國立交通大學	2014-12-08T15:07:51Z	Ge Epitaxial Growth on GaAs Substrates for Application to Ge-Source/Drain GaAs MOSFETs	Luo, Guang-Li; Han, Zong-You; Chien, Chao-Hsin; Ko, Chih-Hsin; Wann, Clement H.; Lin, Hau-Yu; Shen, Yi-Ling; Chung, Cheng-Ting; Huang, Shih-Chiang; Cheng, Chao-Ching; Changb, Chun-Yen
國立交通大學	2019-10-05T00:08:42Z	Ge FinFET CMOS Inverters With Improved Channel Surface Roughness by Using In-Situ ALD Digital O-3 Treatment	Yeh, M. -S.; Luo, G. -L.; Hou, F. -J.; Sung, P. -J.; Wang, C. -J.; Su, C. -J.; Wu, C. -T.; Huang, Y. -C.; Hong, T. -C.; Chao, T. -S.; Chen, B. -Y.; Chen, K. -M.; Wu, Y. -C.; Izawa, M.; Miura, M.; Morimoto, M.; Ishimura, H.; Lee, Y. -J.; Wu, W. -F.; Yeh, W. -K.
臺大學術典藏	2020-06-16T06:33:18Z	Ge gate-all-around FETs on Si	Liu, C.W.;Wong, I.-H.;Chen, Y.-T.;Tu, W.-H.;Huang, S.-H.;Hsu, S.-H.; Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Tu, W.-H.; Huang, S.-H.; Hsu, S.-H.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T09:20:49Z	Ge metal-oxide-semiconductor devices with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectric	Chu, LK; Chiang, TH; Lin, TD; Lee, YJ; Chu, RL; Kwo, J; Hong, M; MINGHWEI HONG
國立臺灣大學	2012	Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric	Chu, L.K.; Chiang, T.H.; Lin, T.D.; Lee, Y.J.; Chu, R.L.; Kwo, J.; Hong, M.
國立交通大學	2019-09-02T07:46:20Z	Ge nanodot-mediated densification and crystallization of low-pressure chemical vapor deposited Si3N4 for advanced complementary metal-oxide-semiconductor photonics and electronics applications	Peng, Kang-Ping; Huang, Tsung Lin; George, Tom; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學	2018-08-21T05:56:59Z	Ge Nanowire FETs with HfZrOx Ferroelectric Gate Stack Exhibiting SS of Sub-60 mV/dec and Biasing Effects on Ferroelectric Reliability	Su, C. -J.; Hong, T. -C.; Tsou, Y. -C.; Hou, F. -J.; Sung, P. -J.; Yeh, M. -S.; Wan, C. -C.; Kao, K. -H.; Tang, Y. -T.; Chiu, C. -H.; Wang, C. -J.; Chung, S. -T.; You, T. -Y.; Huang, Y. -C.; Wu, C. -T.; Lin, K. -L.; Luo, G. -L.; Huang, K. -P.; Lee, Y. -J.; Chao, T. -S.; Wu, W. -F.; Huang, G. -W.; Shieh, J. -M.; Yeh, W. -K.; Wang, Y. -H.
臺大學術典藏	2018-09-10T09:50:18Z	Ge out-diffusion and its effect on ordering phase in InGaP grown on Ge substrate	Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN; H. M. Wu,;Y. J. Yang,;H. H. Lin,; H. M. Wu,
國立臺灣大學	2004-10	Ge Outdiffusion Effect on Flicker Noise in Strained-Si nMOSFETs	Hua, W.C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M.
臺大學術典藏	2018-09-10T04:55:29Z	Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs	Hua, W.-C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M.; CHEE-WEE LIU
國立臺灣大學	2003	Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum	Peng, Y. H.; Chen, C. C.; Kuan, C. H.; Cheng, H. H.
國立臺灣大學	2003-01	Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum	Peng, Y. H.; Chen, C. C.; Kuan, C. H.; Cheng, H. H.
臺大學術典藏	2003	Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum	CHIEH-HSIUNG KUAN; Cheng, H.H.; Kuan, C.H.; Chen, C.C.; Peng, Y.H.; Peng, Y.H.;Chen, C.C.;Kuan, C.H.;Cheng, H.H.
臺大學術典藏	2018-09-10T04:12:36Z	Ge quantum dots sandwiched between two thick Si blocking layers to increase high detectivity	Peng, Y.H.; Chen, C.C.; Kuan, C.H.; Cheng, H.H.; CHIEH-HSIUNG KUAN
國立臺灣大學	2002	Ge quantum dots sandwiched between two thick Si blocking layers to increase high detectivity	Peng, Y.H.; Chen, C.C.; Kuan, C.H.; Cheng, H.H.
國立交通大學	2014-12-08T15:28:41Z	Ge technology beyond Si CMOS	Chin, Albert
國立成功大學	2010-07-01	Ge-doped In2O3和In2Ge2O7奈米線的調控生長及光學性質研究	游智凱; Yu, Chih-Kai
國立成功大學	2010-07-01	Ge-doped In2O3和In2Ge2O7奈米線的調控生長及光學性質研究	游智凱; Yu, Chih-Kai

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