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Institution	Date	Title	Author
義守大學	2017-05	Ge/IIIV fin field-effect transistor common gate process and numerical simulations	Bo-Yuan Chen;Jiann-Lin Chen;Chun-Lin Chu;Guang-Li Luo;Shyong Lee;Edward Yi Chang
國立成功大學	2022-01-19	Ge/Si multilayer epitaxy and removal of dislocations from Ge-nanosheet-channel MOSFETs	Chu;Chun-Lin;Chang;Jen-Yi;Chen;Po-Yen;Wang;Po-Yu;Hsu;Shu-Han;Chou;Dean
國立交通大學	2014-12-12T02:24:52Z	Ge/Si(100):Cl表面上Si、Ge原子交換的觀測	潘祥元; shiang-yuan Pan; 林登松; Deng-Sung Lin
國立臺灣大學	2007-10	Ge/SiGe quantum-well waveguide photodetectors on silicon for the near-infrared	Fidaner, O.; Okyay, A. K.; Roth, J. E.; Schaevitz, R. K.; Kuo, Y.-H.; Saraswat, K. C.; Harris, J. S.; Miller, D. A. B.
國立臺灣大學	2002-07	Ge/sub 2/Sb/sub 2/Te/sub 5/ thin film doped with silver	Lie, C.T.; Kuo, P.C.; Wu, T.H.; Chen, P.W.
臺大學術典藏	2019-03-11T08:02:04Z	Ge1-xSix on Ge-Based N-Type Metal-Oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order StressPiezoresistive Relationships	M. H.Liao; C.-C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng; S.-W. Cheng;P.-C. Huang;C.-P. Hsieh;C.-C. Lee;M. H.Liao
國立臺灣大學	2003-02	Ge2Sb2Te5 thin film doped with silver	Lie, Chao-Te; Kuo, Po-Cheng; Hsu, Wei-Chih; Wu, Ting-Hao; Chen, Po-Wei; Chen, Sheng-Chi
臺大學術典藏	2020-01-13T08:22:35Z	Ge1 - XSix on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationships	Lee, C.-C.; Hsieh, C.-P.; Huang, P.-C.; Cheng, S.-W.; Liao, M.-H.; MING-HAN LIAO
中國醫藥大學	2006-03	GEA3162, a nitric oxide-releasing agent, activates non-store-operated Ca2+ entry and inhibits store-operated Ca2+ entry pathways in neutrophils through thiol oxidation .	許美鳳(Hsu, Mei-Feng); 陳裕森(Yu-San Chen); 黃麗嬌(Li-Jiau Huang); 曹羅悌(Lo-Ti Tsao); 郭盛助(Sheng-Chu Kuo); 王繼平*
臺大學術典藏	2020-05-04T07:58:57Z	GEA: A Goal-Driven Approach toDiscovering Early Aspects.	Lee, Jonathan;Hsu, Kuo-Hsun; Lee, Jonathan; Hsu, Kuo-Hsun; JONATHAN LEE

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