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Showing items 474026-474035 of 2346288  (234629 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T09:19:11Z Hole mobility boost of Ge p-MOSFETs by composite uniaxial stress and biaxial strain Lan, H.-S.; Chen, Y.-T.; Lin, J.-Y.; Liu, C.W.; CHIH-WEN LIU
國立成功大學 2014-12 Hole Mobility Enhancement and p-doping in Monolayer WSe2 by Gold Decoration Chen, Chang-Hsiao; Wu, Chun-Lan; Pu, Jiang; Chiu, Ming-Hui; Kumar, Pushpendra; Takenobu, Taishi; Li, Lain-Jong
國立臺灣科技大學 2013 Hole mobility enhancement of Cu-deficient Cu1.75Zn(Sn 1-xAlx)Se4 bulks Kuo, D.-H.;Tsega, M.
國立臺灣大學 2007 Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M. H.; Maikap, S.; Hsu, C.-H.; Liu, C. W.
臺大學術典藏 2018-09-10T06:31:20Z Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si Peng, C.-Y.; Yuan, F.; Yu, C.-Y.; Kuo, P.-S.; Lee, M.H.; Maikap, S.; Hsu, C.-H.; Liu, C.W.; CHEE-WEE LIU
元智大學 2016-12-03 Hole Mobility of 1,1-bis-(4-bis(4-methyl-phenyl)-amino-phenyl)-cyclohexane (TAPC) and C60 Mixed Film Ying-Tse Li; Chia-Hsun Chen; Chi-Feng Lin; Tien-Lung Chiu; Jiun-Haw Lee
元智大學 2017-12-07 Hole Mobility of 9,10-Di-(2’-naphthyl)anthracene with Metal-Insulator-Semiconductor Charge Extraction by Linearly Increasing Voltage Measurement Chia-Hsun Chen; Tien-Lung Chiu; Chi-Feng Lin; Jiun-Haw Lee
國立交通大學 2014-12-08T15:36:49Z Hole roundness in deep-hole drilling as analysed by Taguchi methods Deng, CS; Chin, JH
國立聯合大學 2005 Hole roundness in deep-hole drilling as analysed by Taquchi methods C.S.Deng
國立交通大學 2014-12-08T15:43:08Z Hole Schottky barrier height enhancement and its application to metal-semiconductor-metal photodetectors Lin, SD; Lee, CP

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