|
|
Taiwan Academic Institutional Repository >
Browse by Title
|
Showing items 474641-474690 of 2348487 (46970 Page(s) Totally)
<< < 9488 9489 9490 9491 9492 9493 9494 9495 9496 9497 > >>
View [10|25|50] records per page
| 國立臺灣大學 |
2004 |
Hole concentration in the three-CuO2-plane copper-oxide superconductor Cu-1223
|
Karppinen, M; Yamauchi, H; Morita, Y; Kitabatake, M; Motohashi, T; Liu, RS; Lee, JM; Chen, JM |
| 臺大學術典藏 |
2018-09-10T04:48:15Z |
Hole concentration in the three-CuO2-plane copper-oxide superconductor Cu-1223
|
RU-SHI LIU; Chen, J. M.; Karppinen, M.;Yamauchi, H.;Morita, Y.;Kitabatake, M.;Motohashi, T.;Liu, R. S.;Lee, J. M.;Chen, J. M.; Karppinen, M.; Yamauchi, H.; Morita, Y.; Kitabatake, M.; Motohashi, T.; Liu, R. S.; Lee, J. M. |
| 臺大學術典藏 |
2006 |
Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
|
Lin, Yu Min; Wu, San Lein; Chang, Shoou Jinn; Chen, Pang Shiu; Liu, Chee Wee; Lin, Yu Min; Wu, San Lein; Chang, Shoou Jinn; Chen, Pang Shiu; Liu, Chee Wee |
| 國立臺灣大學 |
2006 |
Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
|
Lin, Yu Min; Wu, San Lein; Chang, Shoou Jinn; Chen, Pang Shiu; Liu, Chee Wee |
| 國立成功大學 |
2006-05 |
Hole confinement and 1/f noise characteristics of SiGe double-quantum-well p-type metal-oxide-semiconductor field-effect transistors
|
Lin, Yu-Min; Wu, San-Lein; Chang, Shoou-Jinn; Chen, Pang-Shiu; Liu, C. W. |
| 臺大學術典藏 |
2018-09-10T05:58:50Z |
Hole confinement and 1/f noise characteristics of SiGe double-quantum-well p-Type metal-oxide-semiconductor field-effect transistors
|
Lin, Y.M.; San Lein, W.U.; Chang, S.J.; Chen, P.S.; Liu, C.W.; CHEE-WEE LIU |
| 國立臺灣大學 |
2006 |
Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices
|
Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. |
| 國立臺灣大學 |
2006 |
Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices
|
Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. |
| 臺大學術典藏 |
2018-09-10T05:58:49Z |
Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices
|
Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W.; CHEE-WEE LIU |
| 元智大學 |
2004-06 |
Hole detection from a multi-layer PCB image
|
吳家豪; 胡文豐; 陳永盛 |
| 臺大學術典藏 |
2018-09-10T05:51:46Z |
Hole distribution in (Tl0.5Pb0.5)Sr-2(Ca1-xYx)Cu2O7 studied by x-ray absorption spectroscopy
|
Chen, J. M.;Liu, R. S.;Liang, W. Y.; Chen, J. M.; Liu, R. S.; Liang, W. Y.; RU-SHI LIU |
| 臺大學術典藏 |
2018-09-10T06:21:48Z |
Hole distribution in the underdoped, optimally doped, and overdoped superconductors (Tl0.5Pb0.5)Sr-2(Ca1-xYx)Cu2O7
|
Liu, R. S.;Chen, J. M.;Liang, W. Y.; Liu, R. S.; Chen, J. M.; Liang, W. Y.; RU-SHI LIU |
| 臺大學術典藏 |
2018-09-10T06:56:05Z |
Hole distribution in underdoped and overdoped Y(Ba2-ySry)Cu3O6+delta compounds studied by X-ray absorption spectroscopy
|
Liu, R. S.;Chang, C. Y.;Chen, J. M.; Liu, R. S.; Chang, C. Y.; Chen, J. M.; RU-SHI LIU |
| 國立交通大學 |
2014-12-08T15:38:44Z |
Hole distribution in YxPr1-xBa2Cu4O8 and YxPr1-xBa2Cu3O7 probed by X-ray absorption spectroscopy
|
Chen, JM; Liu, SJ; Lee, JM; Lin, JY; Gou, YS; Yang, HD |
| 國立臺灣大學 |
2005-06 |
Hole Distribution of Intercalated Cuprates Using x-ray Absorption Spectroscopy
|
Chen, J.M.; Chang, S.C.; Liu, R.S.; Lee, J.M.; Park, M.; Choy, J.H. |
| 臺大學術典藏 |
2018-09-10T05:16:51Z |
Hole distribution of intercalated cuprates using x-ray absorption spectroscopy
|
Chen, J. M.; Chang, S. C.; Liu, R. S.; Lee, J. M.; Park, M.; Choy, J. H.; Chen, J. M.; Chang, S. C.; Liu, R. S.; Lee, J. M.; Park, M.; Choy, J. H.; RU-SHI LIU |
| 國立臺灣大學 |
2005 |
Hole doping and superconductivity characteristics of the s=1, 2 and 3 members of the (Cu,Mo)-12s2 homologous series of layered copper oxides
|
Karppinen, M; Morita, Y; Kobayashi, T; Grigoraviciute, I; Chen, JM; Liu, RS; Yamauchi, H |
| 臺大學術典藏 |
2018-09-10T05:16:51Z |
Hole doping and superconductivity characteristics of the s=1, 2 and 3 members of the (Cu,Mo)-12s2 homologous series of layered copper oxides
|
Karppinen, M.;Morita, Y.;Kobayashi, T.;Grigoraviciute, I.;Chen, J. M.;Liu, R. S.;Yamauchi, H.; Karppinen, M.; Morita, Y.; Kobayashi, T.; Grigoraviciute, I.; Chen, J. M.; Liu, R. S.; Yamauchi, H.; Hung, Ming-Hui; RU-SHI LIU; Cheng, Ya-Jung |
| 國立交通大學 |
2019-04-03T06:44:45Z |
Hole doping by molecular oxygen in organic semiconductors: Band-structure calculations
|
Lu, Chi-Ken; Meng, Hsin-Fei |
| 臺大學術典藏 |
2018-09-10T04:28:28Z |
Hole doping in Pb-free and Pb-substituted (Bi,Pb)(2)Sr2Ca2Cu3O10+delta superconductors
|
Karppinen, M.;Lee, S.;Lee, J. M.;Poulsen, J.;Nomura, T.;Tajima, S.;Chen, J. M.;Liu, R. S.;Yamauchi, H.; Karppinen, M.; Lee, S.; Lee, J. M.; Poulsen, J.; Nomura, T.; Tajima, S.; Chen, J. M.; Liu, R. S.; Yamauchi, H.; RU-SHI LIU |
| 臺大學術典藏 |
2018-09-10T05:51:44Z |
Hole doping into Co-12s2 copper oxides with s fluorite-structured layers between CuO2 planes
|
Fjellvag, H.; Fjellvag, H.; RU-SHI LIU |
| 國立臺灣大學 |
2006 |
Hole doping into Co-12s2 copper oxides with s fluorite-structured layers between CuO2 planespiezolaminated composite plate
|
Fjellvag, H.; Moritaa, Y.; Nagai, T.; Lee, J.M.; Chen, J.M.; Liu, R.S.; Hauback, B.C.; Awana, V.P.S.; Matsui, Y.; Yamauchi, H.; Karppinen, M. |
| 中原大學 |
2004-11-01 |
Hole Effective Mass in Strained Si1-xCx Alloys
|
C. Y. Lin;S. T. Chang;C. W. Liu |
| 國立臺灣大學 |
2004 |
Hole effective mass in strained Si1-xCx alloys
|
Lin, C. Y.; Chang, S. T.; Liu, C. W. |
| 臺大學術典藏 |
2018-09-10T04:55:28Z |
Hole effective mass in strained Si1-xCx alloys
|
Chang, S.T.; Liu, C.W.; CHEE-WEE LIU; Lin, C.Y.; Lin, C.Y.;Chang, S.T.;Liu, C.W. |
| 國立交通大學 |
2014-12-08T15:11:49Z |
Hole Effective Masses as a Booster of Self-Consistent Six-Band k . p Simulation in Inversion Layers of pMOSFETs
|
Chen, Ming-Jer; Lee, Chien-Chih; Cheng, Kuan-Hao |
| 國立臺灣大學 |
1997 |
Hole effective masses in relaxed Si1 - xCx and Si1 - yGey alloys
|
Lin, C. Y.; Liu, C. W. |
| 臺大學術典藏 |
2018-09-10T06:31:22Z |
Hole effective masses in relaxed Si1-xCx and Si1-yGey alloys
|
Lin, C.Y.; Liu, C.W.; CHEE-WEE LIU |
| 國立成功大學 |
2007-04-16 |
Hole escape processes detrimental to photoluminescence efficiency in a blue InGaN multiple-quantum-well diode under reverse bias conditions
|
Inoue, T.; Fujiwara, K.; Sheu, Jinn-Kong |
| 修平科技大學 |
2005 |
Hole Flanging with Multi-Action Extrusion(孔凸緣複動化擠伸成形)
|
林恆勝;吳家宏 |
| 國立交通大學 |
2017-04-21T06:49:23Z |
Hole g-Factor Anisotropies in Individual InAs Quantum Rings
|
Kaji, R.; Tominaga, T.; Wu, Y. -N.; Wu, M. -F.; Cheng, S. -J.; Adachi, S. |
| 國立交通大學 |
2014-12-08T15:38:13Z |
Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer
|
Wang, C. H.; Ke, C. C.; Lee, C. Y.; Chang, S. P.; Chang, W. T.; Li, J. C.; Li, Z. Y.; Yang, H. C.; Kuo, H. C.; Lu, T. C.; Wang, S. C. |
| 國立交通大學 |
2014-12-08T15:31:58Z |
Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
|
Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chen, Jenn-Fang; Su, Yan-Kuin |
| 國立成功大學 |
2013-08 |
Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
|
Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chen, Jenn-Fang; Su, Yan-Kuin |
| 國立交通大學 |
2014-12-08T15:35:07Z |
Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer
|
Lin, Bing-Cheng; Chen, Kuo-Ju; Wang, Chao-Hsun; Chiu, Ching-Hsueh; Lan, Yu-Pin; Lin, Chien-Chung; Lee, Po-Tsung; Shih, Min-Hsiung; Kuo, Yen-Kuang; Kuo, Hao-Chung |
| 國立交通大學 |
2014-12-08T15:29:53Z |
Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric
|
Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung |
| 國立成功大學 |
2013-02-18 |
Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric
|
Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung |
| 淡江大學 |
1997-12 |
Hole localization in Pr-doped RBa2Cu3O7−y systems
|
Kao, H.-C. I.; Yu, F. C.; Guan, W. |
| 國立臺灣海洋大學 |
2007-12-11 |
Hole Mobilities of 2,7- and 2,2'-Disubstituted 9,9'-Spirobifluorene-Based Triaryldiamines and Their Application as Hole Transport Materials in OLEDs
|
Yuan-Li Liao;Wen-Yi Hung;Tei-Hung Hou;Chi-Yen Lin;Ken-Tsung Wong |
| 臺大學術典藏 |
2018-09-10T06:28:01Z |
Hole mobilities of 2,7- And 2,2-disubstituted 9,9′-spirobifluorene- based triaryldiamines and their application as hole transport materials in OLEDs
|
Liao, Y.-L.; Hung, W.-Y.; Hou, T.-H.; Lin, C.-Y.; Wong, K.-T.; KEN-TSUNG WONG |
| 國立臺灣海洋大學 |
2007-12-15 |
Hole mobilities of 2,7- and 2,2’-Disubstituted 9,9’-Spirobifluorene-based Triaryldiamines and Their Applications as Hole Transporting Material
|
洪文誼; Wen-Yi Hung |
| 臺大學術典藏 |
2007 |
Hole Mobilities of 2,7- and 2,2′-Disubstituted 9,9′-Spirobifluorene-Based Triaryldiamines and Their Application as Hole Transport Materials in OLEDs
|
Hou, Tei-Hung; Lin, Chi-Yen; Wong, Ken-Tsung; Hung, Wen-Yi; Liao, Yuan-Li; Liao, Yuan-Li; Hung, Wen-Yi; Hou, Tei-Hung; Lin, Chi-Yen; Wong, Ken-Tsung |
| 國立臺灣大學 |
2007 |
Hole Mobilities of 2,7- and 2,2′-Disubstituted 9,9′-Spirobifluorene-Based Triaryldiamines and Their Application as Hole Transport Materials in OLEDs
|
Liao, Yuan-Li; Hung, Wen-Yi; Hou, Tei-Hung; Lin, Chi-Yen; Wong, Ken-Tsung |
| 國立臺灣海洋大學 |
2009-02-01 |
Hole Mobilities of Thermally Polymerized Triaryldiamine Derivatives and Their Application as Hole Transport Materials in Organic Light-Emitting Diodes (OLEDs)
|
Chi-Yen Lin;You-Ming Chen;Hsiao-Fan Chen;Fu-Chuan Fang;Yu-Cheng Lin;Wen-Yi Hung;Ken-Tsung Wong;Raymond C. Kwong;Sean C. Xia |
| 國立臺灣大學 |
2009 |
Hole mobilities of thermally polymerized triaryldiamine derivatives and their application as hole-transport materials in organic light-emitting diodes (OLEDs)
|
Lin, Chi-Yen; Chen, You-Ming; Chen, Hsiao-Fan; Fang, Fu-Chuan; Lin, Yu-Cheng; Hung, Wen-Yi; Wong, Ken-Tsung; Kwong, Raymond C.; Xia, Sean C. |
| 臺大學術典藏 |
2018-09-10T07:33:57Z |
Hole mobilities of thermally polymerized triaryldiamine derivatives and their application as hole-transport materials in organic light-emitting diodes (OLEDs)
|
Lin, C.-Y.; Chen, Y.-M.; Chen, H.-F.; Fang, F.-C.; Lin, Y.-C.; Hung, W.-Y.; Wong, K.-T.; Kwong, R.C.; Xia, S.C.; Lin, C.-Y.; Chen, Y.-M.; Chen, H.-F.; Fang, F.-C.; Lin, Y.-C.; Hung, W.-Y.; Wong, K.-T.; Kwong, R.C.; Xia, S.C.; KEN-TSUNG WONG |
| 臺大學術典藏 |
2022-02-21T23:30:52Z |
Hole mobility behavior in Al-gradient polarization-induced p-type AlGaN grown on GaN template
|
Chen, Chung Chi; Huang, Ting Chun; Lin, Yu Wei; Lin, Yu Ren; Wu, Ping Hsiu; Liou, Ping Wei; Hsieh, Hao Yu; Huang, Yang Yi; Yang, Shaobo; YUH-RENN WU; Yang, C. C. |
| 臺大學術典藏 |
2018-09-10T09:19:11Z |
Hole mobility boost of Ge p-MOSFETs by composite uniaxial stress and biaxial strain
|
Lan, H.-S.; Chen, Y.-T.; Lin, J.-Y.; Liu, C.W.; CHIH-WEN LIU |
| 國立成功大學 |
2014-12 |
Hole Mobility Enhancement and p-doping in Monolayer WSe2 by Gold Decoration
|
Chen, Chang-Hsiao; Wu, Chun-Lan; Pu, Jiang; Chiu, Ming-Hui; Kumar, Pushpendra; Takenobu, Taishi; Li, Lain-Jong |
| 國立臺灣科技大學 |
2013 |
Hole mobility enhancement of Cu-deficient Cu1.75Zn(Sn 1-xAlx)Se4 bulks
|
Kuo, D.-H.;Tsega, M. |
Showing items 474641-474690 of 2348487 (46970 Page(s) Totally)
<< < 9488 9489 9490 9491 9492 9493 9494 9495 9496 9497 > >>
View [10|25|50] records per page
|
