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Institution Date Title Author
臺大學術典藏 2018-09-10T03:28:35Z Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG
國立中山大學 2000 Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes M. Hong;K.A. Anselm;J. Kwo;H.M. Ng;J.N. Baillargeon;A.R. Kortan;J.P. Mannaerts;A.Y. Cho;C.M. Lee;J.I. Chyi;T.S. Lay
國立成功大學 2001-05 Properties of GaAs MOSFET with gate dielectric grown by liquid-phase selective oxidation method Wu, Jau-Yi; Sze, Po-Wen; Deng, Yu-Min; Huang, Guo-Wei; Wang, Yeong-Her; Houng, Mau-Phon
國立成功大學 1999 Properties of GaAs oxides prepared by liquid phase chemical-enhanced technique Wang, Hwei-Heng; Chou, Dei-Wei; Wang, Yeong-Her; Houng, Mau-Phon
南台科技大學 1996 Properties of galium in porous glass 林開政; C. Tien; C. S.Wur; K. J. Lin; J. S. Hwang; E. V. Charnaya; Yu. A. Kumzerov
國立臺灣海洋大學 1996-11-01 Properties of gallium in porous glass C. Tien;C. S. Wur;K. J. Lin;J. S. Hwang;E. V. Charnaya;Yu. A. Kumzerov
大葉大學 2015-01-08 Properties of GaN Decomposition in Atmospheric Pressures Huang, Shih-Yung;Wang, Wei-Kai;Lin, Po-Rung
大葉大學 2015-11-15 Properties of GaN Decomposition in Atmospheric Pressures Huang, Shih-Yung;Wang, Wei-Kai;Lin, Po-Rung
國立交通大學 2014-12-08T15:13:16Z Properties of gated single free-standing carbon nanotube with multiple growth sequence Tseng, Shih Chun; Tsai, Ching Hsiang; Li, Chia-Hung; Peng, Wen Yang; Chen, Shih-Pu; Tsai, Chuen Horng; Yao, Bin Cheng
國立交通大學 2014-12-08T15:12:50Z Properties of Ge films grown through inductively coupled plasma chemical vapor deposition on SiO(2) substrates Yang, Ming-Jui; Chien, Chao-Hsin; Shen, Chih-Yen; Huang, Tiao-Yuan

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