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顯示項目 695286-695295 / 2348719 (共234872頁)
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| 臺大學術典藏 |
2018-09-10T03:28:35Z |
Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes
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Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 國立中山大學 |
2000 |
Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes
|
M. Hong;K.A. Anselm;J. Kwo;H.M. Ng;J.N. Baillargeon;A.R. Kortan;J.P. Mannaerts;A.Y. Cho;C.M. Lee;J.I. Chyi;T.S. Lay |
| 國立成功大學 |
2001-05 |
Properties of GaAs MOSFET with gate dielectric grown by liquid-phase selective oxidation method
|
Wu, Jau-Yi; Sze, Po-Wen; Deng, Yu-Min; Huang, Guo-Wei; Wang, Yeong-Her; Houng, Mau-Phon |
| 國立成功大學 |
1999 |
Properties of GaAs oxides prepared by liquid phase chemical-enhanced technique
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Wang, Hwei-Heng; Chou, Dei-Wei; Wang, Yeong-Her; Houng, Mau-Phon |
| 南台科技大學 |
1996 |
Properties of galium in porous glass
|
林開政; C. Tien; C. S.Wur; K. J. Lin; J. S. Hwang; E. V. Charnaya; Yu. A. Kumzerov |
| 國立臺灣海洋大學 |
1996-11-01 |
Properties of gallium in porous glass
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C. Tien;C. S. Wur;K. J. Lin;J. S. Hwang;E. V. Charnaya;Yu. A. Kumzerov |
| 大葉大學 |
2015-01-08 |
Properties of GaN Decomposition in Atmospheric Pressures
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Huang, Shih-Yung;Wang, Wei-Kai;Lin, Po-Rung |
| 大葉大學 |
2015-11-15 |
Properties of GaN Decomposition in Atmospheric Pressures
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Huang, Shih-Yung;Wang, Wei-Kai;Lin, Po-Rung |
| 國立交通大學 |
2014-12-08T15:13:16Z |
Properties of gated single free-standing carbon nanotube with multiple growth sequence
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Tseng, Shih Chun; Tsai, Ching Hsiang; Li, Chia-Hung; Peng, Wen Yang; Chen, Shih-Pu; Tsai, Chuen Horng; Yao, Bin Cheng |
| 國立交通大學 |
2014-12-08T15:12:50Z |
Properties of Ge films grown through inductively coupled plasma chemical vapor deposition on SiO(2) substrates
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Yang, Ming-Jui; Chien, Chao-Hsin; Shen, Chih-Yen; Huang, Tiao-Yuan |
顯示項目 695286-695295 / 2348719 (共234872頁)
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