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Showing items 893396-893405 of 2351427 (235143 Page(s) Totally) << < 89335 89336 89337 89338 89339 89340 89341 89342 89343 89344 > >> View [10|25|50] records per page
| 臺大學術典藏 |
2018-09-10T03:50:35Z |
Turn-Off Characteristics of Power Transistors Using Emitter-Open Turn-Off
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D. Y. Chen;B. Jackson; D. Y. Chen; B. Jackson; DAN CHEN |
| 國立臺灣大學 |
1981 |
Turn-Off Characteristics of Power Transistors Using Emitter-Open Turn-Off
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Chen, D. Y.; Jackson, B. |
| 臺大學術典藏 |
2018-09-10T09:24:48Z |
Turn-off Transient Behavior of 40nm PD SOI NMOS Device Considering the Floating Body Effect
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S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO |
| 臺大學術典藏 |
2018-09-10T09:50:25Z |
Turn-off Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect
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D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO; D. H. Lung;J. B. Kuo;D. Chen |
| 國立臺灣大學 |
1992-06 |
Turn-on Jitter in Semiconductor Lasers with Moderate Reflecting Feedback
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Wu, H. J.; 張宏鈞; Wu, H. J.; Chang, Hung-Chun |
| 臺大學術典藏 |
2013-12 |
Turn-on Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect
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D. H. Lung;J. B. Kuo;D. Chen; D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO |
| 臺大學術典藏 |
1990-05 |
Turn-on transient imposed extrinsic base consideration in BiNMOS transistors
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Chen, Yen-Wen; Kuo, James; Chen, Yen-Wen; Kuo, James |
| 國立臺灣大學 |
1990-05 |
Turn-on transient imposed extrinsic base consideration in BiNMOS transistors
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Chen, Yen-Wen; Kuo, James |
| 南台科技大學 |
2007 |
Turn-on Voltage Reduction of Organic Light-Emitting Diode Using a Nickel-Doped Indium Tin Oxide Anode Prepared by Single Target Sputterin
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吳文端; Ching-Ming Hsu; Wen-Tuan Wu; Hsin-Hui Lee |
| 南台科技大學 |
2008 |
Turn-on voltage reduction of organic light-emitting diode using a nivkel-doped indium tin oxide anode prepared by single target sputtering
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許進明; Ching-Ming Hsu; Wen-tuan Wu; Jsin-Hui Lee |
Showing items 893396-893405 of 2351427 (235143 Page(s) Totally) << < 89335 89336 89337 89338 89339 89340 89341 89342 89343 89344 > >> View [10|25|50] records per page
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