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Showing items 893396-893405 of 2351427  (235143 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T03:50:35Z Turn-Off Characteristics of Power Transistors Using Emitter-Open Turn-Off D. Y. Chen;B. Jackson; D. Y. Chen; B. Jackson; DAN CHEN
國立臺灣大學 1981 Turn-Off Characteristics of Power Transistors Using Emitter-Open Turn-Off Chen, D. Y.; Jackson, B.
臺大學術典藏 2018-09-10T09:24:48Z Turn-off Transient Behavior of 40nm PD SOI NMOS Device Considering the Floating Body Effect S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏 2018-09-10T09:50:25Z Turn-off Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO; D. H. Lung;J. B. Kuo;D. Chen
國立臺灣大學 1992-06 Turn-on Jitter in Semiconductor Lasers with Moderate Reflecting Feedback Wu, H. J.; 張宏鈞; Wu, H. J.; Chang, Hung-Chun
臺大學術典藏 2013-12 Turn-on Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect D. H. Lung;J. B. Kuo;D. Chen; D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO
臺大學術典藏 1990-05 Turn-on transient imposed extrinsic base consideration in BiNMOS transistors Chen, Yen-Wen; Kuo, James; Chen, Yen-Wen; Kuo, James
國立臺灣大學 1990-05 Turn-on transient imposed extrinsic base consideration in BiNMOS transistors Chen, Yen-Wen; Kuo, James
南台科技大學 2007 Turn-on Voltage Reduction of Organic Light-Emitting Diode Using a Nickel-Doped Indium Tin Oxide Anode Prepared by Single Target Sputterin 吳文端; Ching-Ming Hsu; Wen-Tuan Wu; Hsin-Hui Lee
南台科技大學 2008 Turn-on voltage reduction of organic light-emitting diode using a nivkel-doped indium tin oxide anode prepared by single target sputtering 許進明; Ching-Ming Hsu; Wen-tuan Wu; Jsin-Hui Lee

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