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显示项目 443541-443550 / 2348439 (共234844页)
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| 臺大學術典藏 |
1999-02 |
Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy
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Chang, Pei-Zen; Lu, Shey-Shi; Lin, Yo-Sheng; Lin, Yo-Sheng;Lu, Shey-Shi;Chang, Pei-Zen |
| 臺大學術典藏 |
2018-09-10T07:37:07Z |
Ga0.51In0.49P/InxGa1?xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy
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Chang, P.-Z.; Lin, Y.-S.; Lu, S.-S.; Lu, S.-S. |
| 國立交通大學 |
2014-12-08T15:45:20Z |
Ga0.5In0.5P barrier layer for wet oxidation of AlAs
|
Lee, SC; Lee, WI |
| 臺大學術典藏 |
2018-09-10T14:54:10Z |
GA2 and GA20-oxidase expressions are associated with the meristem position in Streptocarpus rexii (Gesneriaceae)
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Spada, A.; M?ller, M.; CHUN-NENG WANG; Wang, C.-N.; Nishii, K.;Ho, M.-J.;Chou, Y.-W.;Gabotti, D.;Wang, C.-N.;Spada, A.;M?ller, M.; Nishii, K.; Ho, M.-J.; Chou, Y.-W.; Gabotti, D. |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion
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Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; Hong, M.; Kwo, J.; Cui, S.; Ma, T.P.; MINGHWEI HONG |
| 臺北醫學大學 |
2003-04 |
GA2002,SEE YOU IN TAIPEI
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臺北醫學大學 |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
Ga203 films for electronic and optoelectronic ap
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Passlack, M;Schubert, EF;Hobson, WS;Hong, M;Moriya, N;Chu, SNG;Konstadinidis, K;Mannaerts, JP;Schnoes, ML;Zydzik, GJ; Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:13Z |
Ga2O3 (Gd2O3) as a dielectric insulator for GaAs device applications
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Lay, Tsong S; Hong, Minghwei; Mannaerts, JP; Liu, CT; Kwo, Jueinai R; Ren, Fan; Marcus, MA; Ng, KK; Chen, Young-Kai; Chou, Li-Jen; others; MINGHWEI HONG |
| 臺大學術典藏 |
1998 |
Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs
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Hong, M; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices
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Chu, LK;Lin, TD;Huang, ML;Chu, RL;Chang, CC;Kwo, J;Hong, M; Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
显示项目 443541-443550 / 2348439 (共234844页)
<< < 44350 44351 44352 44353 44354 44355 44356 44357 44358 44359 > >>
每页显示[10|25|50]项目
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