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Showing items 443571-443595 of 2348406 (93937 Page(s) Totally)
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| 淡江大學 |
2005-03 |
GAA: A New Optimization Technique for Task Matching and Scheduling in HCSs
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莊博任; Chuang, Po-jen; 魏家鑫; Wei, Chia-hsin; 邱育賢; Chiu, Yu-shian |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
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Y. R. Lin,;Y. F. Lai,;C. P. Liu,;H. H. Lin,; Y. R. Lin,; Y. F. Lai,; C. P. Liu,; H. H. Lin,; HAO-HSIUNG LIN |
| 國立成功大學 |
2017-05 |
GAAFET Versus Pragmatic FinFET at the 5nm Si-Based CMOS Technology Node
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Huang;Ya-Chi;Chiang;Meng-Hsueh;Wang;Shui-Jinn;Fossum;Jerry, G. |
| 國立高雄第一科技大學 |
1999.01 |
GAAP與SAP對產物保險會計處理上之影響
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賴麗華;呂嘉盈 |
| 國立交通大學 |
2014-12-08T15:04:05Z |
GAAS BIDIRECTIONAL BISTABILITY SWITCH USING DOUBLE TRIANGULAR BARRIER STRUCTURES
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YARN, KF; WANG, YH; CHANG, CY |
| 義守大學 |
2010-07 |
GaAs HBT異質接面雙極性電晶體VBIC大訊號模型建立
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林琪鈞; Chi-Chun Lin |
| 國立成功大學 |
1994 |
GaAs High Speed Devices
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張俊彥; F. Kai |
| 國立交通大學 |
2014-12-16T08:15:19Z |
GaAs high-speed devices : physics, technology, and circuit applications
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Chang, C Y |
| 國立成功大學 |
2002-09 |
GaAs metal-oxide-semiconductor field effect transistors fabricated with low-temperature liquid-phase-deposited SiO2
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Huang, Chien-Jung; Ya, Zhen-Song; Horng, Jui-Hong; Houng, Mau-Phon; Wang, Yeong-Her |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
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MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL |
| 臺大學術典藏 |
2021-07-26T09:44:17Z |
GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 – In comparison with atomic layer deposited Al2O3
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Wan H.W;Lin K.Y;Cheng C.K;Su Y.K;Lee W.C;Hsu C.H;Pi T.W;Kwo J;Hong M.; Wan H.W; Lin K.Y; Cheng C.K; Su Y.K; Lee W.C; Hsu C.H; Pi T.W; Kwo J; Hong M.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 ??In comparison with atomic layer deposited Al2O3
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Wan, H.W.;Lin, K.Y.;Cheng, C.K.;Su, Y.K.;Lee, W.C.;Hsu, C.H.;Pi, T.W.;Kwo, J.;Hong, M.; Wan, H.W.; Lin, K.Y.; Cheng, C.K.; Su, Y.K.; Lee, W.C.; Hsu, C.H.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 國立臺灣大學 |
2000 |
GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer
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Lee, Ching-Ting; Shyu, Kuo-Chuan; Lin, Iang-Jeng; Lin, Hao-Hsiung |
| 國立交通大學 |
2014-12-08T15:41:41Z |
GaAs metal-semiconductor-metal photodetectors with low dark current and high responsivity at 850 nm
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Lin, SD; Lee, CP |
| 國立高雄師範大學 |
1998-08 |
GaAs MMIC被動元件與MESFET偏壓電路之研製
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王瑞祿; Ruey-Lue Wang |
| 臺大學術典藏 |
2002 |
GaAs monolithic 1.5 to 2.8 GHz tunable ring oscillator withaccurate quadrature outputs
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Wu, Wen-Chieh; Lin, Hao-Hsiung; Wu, Wen-Chieh; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2002 |
GaAs monolithic 1.5 to 2.8 GHz tunable ring oscillator withaccurate quadrature outputs
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Wu, Wen-Chieh; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2018-09-10T04:14:55Z |
GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs
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W. C. Wu,; H. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 國立成功大學 |
2005-07 |
GaAs MOS capacitors with photo-CVD SiO2 insulator layers
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Liu, C. H.; Lin, T. K.; Chang, Shoou-Jinn |
| 臺大學術典藏 |
2018-09-10T07:01:18Z |
GaAs MOSFET using MBE-grown Ga 2 O 3 (Gd 2 O 3) as gate oxide
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Kim, S-J; Park, J-W; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:57Z |
GaAs MOSFET using MBE-grown Ga 2 O 3 (Gd 2 O 3 ) as gate oxide
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Kim, S.-J.; Park, J.-W.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
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Ye, PD;Wilk, GD;Kwo, J;Yang, BAYB;Gossmann, H-JL;Frei, MAFM;Chu, SNG;Mannaerts, JP;Sergent, MASM;Hong, MAHM;others; Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:51Z |
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
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Ye, P.D.;Wilk, G.D.;Kwo, J.;Yang, B.;Gossmann, H.-J.L.;Frei, M.;Chu, S.N.G.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.K.;Bude, J.; Ye, P.D.; Wilk, G.D.; Kwo, J.; Yang, B.; Gossmann, H.-J.L.; Frei, M.; Chu, S.N.G.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG |
| 國立成功大學 |
1999-01 |
GaAs MOSFET's fabrication with a selective liquid phase oxidized gate
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Wu, Jau-Yi; Wang, Hwei-Heng; Wang, Yeong-Her; Houng, Mau-Phon |
| 臺大學術典藏 |
2018-09-10T03:28:32Z |
GaAs MOSFET-Achievements and Challenges M. Hong, YC Wang, F. Ren (,), JP Mannaerts, J. Kwo, AR Kortan, JN Baillargeon, and AY Cho Bell Laboratories, Lucent Technologies, Murray Hill, NJ
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Hong, M; MINGHWEI HONG |
Showing items 443571-443595 of 2348406 (93937 Page(s) Totally)
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