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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T03:46:44Z	GaAs MOSFET-Materials Physics and Devices	Hong, M;Kwo, J;Kortan, AR;Mannaerts, JP;Wang, YC;Lay, TS; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wang, YC; Lay, TS; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:01:13Z	GaAs MOSFETs using Ga 2 O 3 (Gd 2 O 3) as gate dielectric	Hong, Minghwei; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:14:22Z	GaAs nanowire/PEDOT: PSS hybrid solar cells	Chao, J.-J.;Shiu, S.-C.;Lin, C.-F.; Chao, J.-J.; Shiu, S.-C.; Lin, C.-F.; CHING-FUH LIN
臺大學術典藏	2018-09-10T08:14:22Z	GaAs nanowire/PEDOT:PSS hybrid solar cells	Chao, J.-J.;Shiu, S.-C.;Lin, C.-F.; Chao, J.-J.; Shiu, S.-C.; Lin, C.-F.; CHING-FUH LIN
臺大學術典藏	2018-09-10T08:14:22Z	GaAs nanowire/PEDOT:PSS hybrid solar cells: Morphological and performance characterization	Chao, J.-J.;Shiu, S.-C.;Lin, C.-F.; Chao, J.-J.; Shiu, S.-C.; Lin, C.-F.; CHING-FUH LIN
臺大學術典藏	2018-09-10T08:42:04Z	GaAs nanowire/PEDOT:PSS hybrid solar cells: The relationship between nanowire morphology and device performance	Chao, J.-J.;Shiu, S.-C.;Hung, S.-C.;Lin, C.-F.; Chao, J.-J.; Shiu, S.-C.; Hung, S.-C.; Lin, C.-F.; CHING-FUH LIN
臺大學術典藏	2018-09-10T08:14:22Z	GaAs nanowire/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) hybrid solar cells	Chao, J.-J.;Shiu, S.-C.;Hung, S.-C.;Lin, C.-F.; Chao, J.-J.; Shiu, S.-C.; Hung, S.-C.; Lin, C.-F.; CHING-FUH LIN
臺大學術典藏	2018-09-10T09:22:03Z	GaAs nanowire/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) hybrid solar cells with incorporating electron blocking poly(3-hexylthiophene) layer	Chao, J.-J.; Shiu, S.-C.; Lin, C.-F.; CHING-FUH LIN
國立高雄師範大學	1992	GaAs Negative Differential Resistance Devices	Ruey-Lue Wang;Y. K. Su;H. H. Tsai; 王瑞祿
元智大學	2006-08	GaAs pHEMT characterization for OFDM power amplifier application	黃建彰; 李菘茂; 陳冠宇
元智大學	2005-08	GaAs pHEMT characterization for OFDM power amplifier application	黃建彰; 李菘茂; 陳冠宇
元智大學	2005-08	GaAs pHEMT characterization for OFDM power amplifier application	黃建彰; 李菘茂; 陳冠宇
義守大學	2011	GaAs pHEMT射頻切換開關的特性分析	李威儂; Wei-Nung Li
國立交通大學	2015-07-21T08:28:30Z	GaAs Polariton Interference in Magnetic Field: Oblique Incident Ellipsometry Measurement	Su, Sheng-Kai; Voskoboynikov, Oleksandr; Li, Liang-Chen; Suen, Yuen-Wuu; Lee, Chien-Ping
元智大學	2006-09	GaAs power pHEMT characterization for extracting nonlinear parameters of drain current by harmonic measurement	陳冠宇; 黃建彰
元智大學	2006-09	GaAs power pHEMT characterization for extracting nonlinear parameters of drain current by harmonic measurement	陳冠宇; 黃建彰
臺大學術典藏	2018-09-10T05:56:11Z	GaAs surface passivation using in-situ oxide deposition	Passlack, M;Hong, M;Opila, RL;Mannaerts, JP;Kwo, JR; Passlack, M; Hong, M; Opila, RL; Mannaerts, JP; Kwo, JR; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:32Z	GaAs surface reconstruction obtained using a dry process	Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG
國立高雄師範大學	1995	GaAs tristep low-low doping channel field effect transistor	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu;Wen-Shiung Lour;Yuan-Tzu Liu;Rong-Chau Liu; 蔡榮輝
中州科技大學	2012-12	GaAs 發光二極體元件的工作特性模擬分析	姚凱瀚, 陳奕豪,徐守棟
國立成功大學	2002	GaAs(N11)A/B 基板上成長之InGaAs 量子點其光學性質,壓電效應,表層厚度與空間分析之研究(2/2)	田興龍
國立臺灣大學	1993	GaAs-AlxGa1-xAs系統電子及電網Subband Energy之度量	張顏暉; Chang, Yuan-Huei
臺大學術典藏	2018-09-10T07:02:54Z	GaAs-based bipolar cascade light-emitting-diodes and superluminescent- diodes at the 1.04-μm wavelength regime	Guol, S.-H. and Wang Jr., H. and Wu, Y.-H. and Lin, W. and Yang, Y.-J. and Sun, C.-K. and Pan, C.-L. and Shi, J.-W.; CHI-KUANG SUN
臺大學術典藏	2018-09-10T03:29:19Z	GaAs-based long-wavelength traveling-wave photodetector	Shi, Jin-Wei; Sun, Chi-Kuang; Yang, Ying-Jay; Chiu, Yi-Jen; Bowers, John E.; CHI-KUANG SUN
臺大學術典藏	2018-09-10T03:51:07Z	GaAs-based long-wavelength traveling-wave photodetector	Y. J. Yang,; J. E. Bowers; YING-JAY YANG; J.-W. Shi; K.-G. Gan; Y.-J. Chiu; C.-K. Sun
臺大學術典藏	2019-12-27T07:49:50Z	GaAs-based metal-oxide semiconductor field-effect transistors with Al 2 O 3 gate dielectrics grown by atomic layer deposition	Ye, P.D.; Wilk, G.D.; Yang, B.; Kwo, J.; Gossmann, H.-J.L.; Frei, M.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:51:58Z	GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition	Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:33Z	GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition	Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG
南台科技大學	2021-11	GaAs-Based p-i-n Narrow Bandpass 850 nm IR Photodetector With a p-AlGaAs Filter Layer	Chun-Kai Wang;Yu-Zung Chiou;Yi-Lo Huang
臺大學術典藏	2018-09-10T07:35:54Z	GaAs-based transverse junction superluminescent diode at 1.1um wavelength region	Guol, S.-H.;Chou, M.-G.;Wang, J.-H.;Yang, Y.-J.;Sun, C.-K.;Shi, J.-W.; Guol, S.-H.; Chou, M.-G.; Wang, J.-H.; Yang, Y.-J.; Sun, C.-K.; Shi, J.-W.; CHI-KUANG SUN
臺大學術典藏	2018-09-10T08:14:03Z	GaAs-based transverse junction superluminescent diodes with strain-compensated InGaAs-GaAsP multiple-quantum-wells at 1.1-μm wavelength	Guol, S.-H.;Chou, M.-G.;Yang, Y.-J.;Sun, C.-K.;Shi, J.-W.; Guol, S.-H.; Chou, M.-G.; Yang, Y.-J.; Sun, C.-K.; Shi, J.-W.; CHI-KUANG SUN
臺大學術典藏	2010	GaAs-Based Transverse Junction Superluminescent Diodes with Strain-Compensated InGaAs/GaAsP Multiple-Quantum-Wells at 1.1μm Wavelength	Guol, Shi-Hao; Chou, Ming-Ge; Yang, Ying-Jay; Sun, Chi-Kuang; Shi, Jin-Wei; Guol, Shi-Hao; Chou, Ming-Ge; Yang, Ying-Jay; Sun, Chi-Kuang; Shi, Jin-Wei
國立臺灣大學	2010	GaAs-Based Transverse Junction Superluminescent Diodes with Strain-Compensated InGaAs/GaAsP Multiple-Quantum-Wells at 1.1μm Wavelength	Guol, Shi-Hao; Chou, Ming-Ge; Yang, Ying-Jay; Sun, Chi-Kuang; Shi, Jin-Wei
國立成功大學	1999	GAAS-BASED 微波主動元件之研究	蘇炎坤; 王永和; 王瑞祿
國立成功大學	1999	GaAs-Based 微波主動元件之研究-子計劃二：PHEMT 微波功率元件之研究	王永和
國立成功大學	1999	GAAS-BASED 微波主動元件之研究-子計畫一：HBT 高頻元件之研製	蘇炎坤
國立高雄師範大學	1998-08	GaAs-Based微波主動元件之研究---子計畫III：HBT高頻元件等效電路之研究	王瑞祿; Ruey-Lue Wang
國立高雄師範大學	1998-08	GaAs-Based微波主動元件之研究---總計畫	蘇炎坤;王永和;王瑞祿; Ruey-Lue Wang
國立高雄師範大學	1995	GaAs-InGaAs doping-channel negative-differential-resistance field-effect transistor (NDRFET)	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu;Wen-Shiung Lour;Yuan-Tzu Liu;Rong-Chau Liu; 蔡榮輝
國立中山大學	2003-02-24	GaAs/Al0.3Ga0.7As雙量子井之二維電子氣在低溫高磁場下的傳導研究	何珮綺
國立成功大學	1997	GaAs/AlAs 超晶格界面混雜現象的研究	盧炎田
國立交通大學	2014-12-12T02:17:37Z	GaAs/AlAs/GaAs量子結構的導納頻譜分析	徐念慶; Hsu, Nian-Ching; 陳振芳; Jenn-Fang Chen
國立成功大學	1996	GaAs/AlAs夾層結構中的載子動力學(II)	盧炎田
國立成功大學	1995	GaAs/AlAs夾層結構的載子動力學研究 (I)	盧炎田
臺大學術典藏	2018-09-10T03:28:33Z	GaAs/AlGaAs multiple quantum well GRIN-SCH vertical cavity surface emitting laser diodes	Wang, YH;Tai, K;Wynn, JD;Hong, M;Fischer, RJ;Mannaerts, JP;Cho, AY; Wang, YH; Tai, K; Wynn, JD; Hong, M; Fischer, RJ; Mannaerts, JP; Cho, AY; MINGHWEI HONG
國立交通大學	2014-12-12T02:07:11Z	GaAs/AlGaAs量子井電子傳輸的幾何效應	陳益德; CHEN,YI-DE; 汪大暉; WANG,DA-HUI
臺大學術典藏	2018-09-10T03:46:45Z	GaAs/AlxGa1- xAs quantum well infra-red photodetectors with cutoff wavelength $λ$c= 14.9 $μ$m	Zussman, A; Levine, BF; Hong, Mingyi; Mannaerts, JP; MINGHWEI HONG
國立交通大學	2014-12-12T01:53:33Z	GaAs/In(0.5)Ga(0.5)P 雙接面太陽能電池磊晶與製程的設計	林志遠; Lin, Chih Yuan; 余沛慈; Yu, Pei Chen
國立臺灣大學	2009	GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer	Lin, Y.R.; Lin, H.H.; Chu, J.H.
臺大學術典藏	2018-09-10T07:41:12Z	GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer	Y. R. Lin, H. H. Lin,;J. H. Chu; Y. R. Lin, H. H. Lin,; J. H. Chu; HAO-HSIUNG LIN

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