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Showing items 443601-443625 of 2348406 (93937 Page(s) Totally) << < 17740 17741 17742 17743 17744 17745 17746 17747 17748 17749 > >> View [10|25|50] records per page
| 臺大學術典藏 |
2018-09-10T08:42:04Z |
GaAs nanowire/PEDOT:PSS hybrid solar cells: The relationship between nanowire morphology and device performance
|
Chao, J.-J.;Shiu, S.-C.;Hung, S.-C.;Lin, C.-F.; Chao, J.-J.; Shiu, S.-C.; Hung, S.-C.; Lin, C.-F.; CHING-FUH LIN |
| 臺大學術典藏 |
2018-09-10T08:14:22Z |
GaAs nanowire/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) hybrid solar cells
|
Chao, J.-J.;Shiu, S.-C.;Hung, S.-C.;Lin, C.-F.; Chao, J.-J.; Shiu, S.-C.; Hung, S.-C.; Lin, C.-F.; CHING-FUH LIN |
| 臺大學術典藏 |
2018-09-10T09:22:03Z |
GaAs nanowire/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) hybrid solar cells with incorporating electron blocking poly(3-hexylthiophene) layer
|
Chao, J.-J.; Shiu, S.-C.; Lin, C.-F.; CHING-FUH LIN |
| 國立高雄師範大學 |
1992 |
GaAs Negative Differential Resistance Devices
|
Ruey-Lue Wang;Y. K. Su;H. H. Tsai; 王瑞祿 |
| 元智大學 |
2006-08 |
GaAs pHEMT characterization for OFDM power amplifier application
|
黃建彰; 李菘茂; 陳冠宇 |
| 元智大學 |
2005-08 |
GaAs pHEMT characterization for OFDM power amplifier application
|
黃建彰; 李菘茂; 陳冠宇 |
| 元智大學 |
2005-08 |
GaAs pHEMT characterization for OFDM power amplifier application
|
黃建彰; 李菘茂; 陳冠宇 |
| 義守大學 |
2011 |
GaAs pHEMT射頻切換開關的特性分析
|
李威儂; Wei-Nung Li |
| 國立交通大學 |
2015-07-21T08:28:30Z |
GaAs Polariton Interference in Magnetic Field: Oblique Incident Ellipsometry Measurement
|
Su, Sheng-Kai; Voskoboynikov, Oleksandr; Li, Liang-Chen; Suen, Yuen-Wuu; Lee, Chien-Ping |
| 元智大學 |
2006-09 |
GaAs power pHEMT characterization for extracting nonlinear parameters of drain current by harmonic measurement
|
陳冠宇; 黃建彰 |
| 元智大學 |
2006-09 |
GaAs power pHEMT characterization for extracting nonlinear parameters of drain current by harmonic measurement
|
陳冠宇; 黃建彰 |
| 臺大學術典藏 |
2018-09-10T05:56:11Z |
GaAs surface passivation using in-situ oxide deposition
|
Passlack, M;Hong, M;Opila, RL;Mannaerts, JP;Kwo, JR; Passlack, M; Hong, M; Opila, RL; Mannaerts, JP; Kwo, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
GaAs surface reconstruction obtained using a dry process
|
Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
| 國立高雄師範大學 |
1995 |
GaAs tristep low-low doping channel field effect transistor
|
Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu;Wen-Shiung Lour;Yuan-Tzu Liu;Rong-Chau Liu; 蔡榮輝 |
| 中州科技大學 |
2012-12 |
GaAs 發光二極體元件的工作特性模擬分析
|
姚凱瀚, 陳奕豪,徐守棟 |
| 國立成功大學 |
2002 |
GaAs(N11)A/B 基板上成長之InGaAs 量子點其光學性質,壓電效應,表層厚度與空間分析之研究(2/2)
|
田興龍 |
| 國立臺灣大學 |
1993 |
GaAs-AlxGa1-xAs系統電子及電網Subband Energy之度量
|
張顏暉; Chang, Yuan-Huei |
| 臺大學術典藏 |
2018-09-10T07:02:54Z |
GaAs-based bipolar cascade light-emitting-diodes and superluminescent- diodes at the 1.04-μm wavelength regime
|
Guol, S.-H. and Wang Jr., H. and Wu, Y.-H. and Lin, W. and Yang, Y.-J. and Sun, C.-K. and Pan, C.-L. and Shi, J.-W.; CHI-KUANG SUN |
| 臺大學術典藏 |
2018-09-10T03:29:19Z |
GaAs-based long-wavelength traveling-wave photodetector
|
Shi, Jin-Wei; Sun, Chi-Kuang; Yang, Ying-Jay; Chiu, Yi-Jen; Bowers, John E.; CHI-KUANG SUN |
| 臺大學術典藏 |
2018-09-10T03:51:07Z |
GaAs-based long-wavelength traveling-wave photodetector
|
Y. J. Yang,; J. E. Bowers; YING-JAY YANG; J.-W. Shi; K.-G. Gan; Y.-J. Chiu; C.-K. Sun |
| 臺大學術典藏 |
2019-12-27T07:49:50Z |
GaAs-based metal-oxide semiconductor field-effect transistors with Al 2 O 3 gate dielectrics grown by atomic layer deposition
|
Ye, P.D.; Wilk, G.D.; Yang, B.; Kwo, J.; Gossmann, H.-J.L.; Frei, M.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:58Z |
GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition
|
Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition
|
Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG |
| 南台科技大學 |
2021-11 |
GaAs-Based p-i-n Narrow Bandpass 850 nm IR Photodetector With a p-AlGaAs Filter Layer
|
Chun-Kai Wang;Yu-Zung Chiou;Yi-Lo Huang |
| 臺大學術典藏 |
2018-09-10T07:35:54Z |
GaAs-based transverse junction superluminescent diode at 1.1um wavelength region
|
Guol, S.-H.;Chou, M.-G.;Wang, J.-H.;Yang, Y.-J.;Sun, C.-K.;Shi, J.-W.; Guol, S.-H.; Chou, M.-G.; Wang, J.-H.; Yang, Y.-J.; Sun, C.-K.; Shi, J.-W.; CHI-KUANG SUN |
Showing items 443601-443625 of 2348406 (93937 Page(s) Totally) << < 17740 17741 17742 17743 17744 17745 17746 17747 17748 17749 > >> View [10|25|50] records per page
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