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显示项目 445686-445695 / 2348719 (共234872页)
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| 國立臺灣大學 |
2010 |
Gate oxide wear out using novel polysilazane-base inorganic as nano-scaling shallow trench filling
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Ho, Ching Yuan; Shih, Kai-Yao; He, Jr Hau |
| 中原大學 |
2010-04 |
Gate Oxide Weat out Using Novel Polysilazane-base Inorganic as Nano-scaling Shallow Trench Filling
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Ching Yuan. Ho;Kai-Yao.Shih ; jr Hau He, |
| 國立交通大學 |
2014-12-08T15:27:45Z |
Gate oxynitride grown in N2O and annealed in no using rapid thermal processing
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Sun, SC; Chen, CH; Lou, JC; Yen, LW; Lin, CJ |
| 國立交通大學 |
2014-12-08T15:36:34Z |
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
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Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2019-04-02T06:00:51Z |
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
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Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2015-12-04T07:03:12Z |
GATE STRUCTURE
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CHANG Yi; KUO Chien-I; HSU Heng-Tung |
| 國立成功大學 |
2017 |
Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT
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Liu, H.-Y.;Lee, C.-S.;Lin, C.-W.;Chiang, M.-H.;Hsu, W.-C. |
| 國立交通大學 |
2014-12-16T06:16:19Z |
Gate structure of metal oxide semiconductor field effect transistor
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Bing-Yue, Tsui; Chih-Feng, Huang |
| 國立交通大學 |
2019-04-03T06:43:59Z |
Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La2/3Sr1/3MnO3 thin film
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Chiu, Shao-Pin; Yamanouchi, Michihiko; Oyamada, Tatsuro; Ohta, Hiromichi; Lin, Juhn-Jong |
| 臺大學術典藏 |
2018-09-10T08:18:06Z |
Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect
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H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO |
显示项目 445686-445695 / 2348719 (共234872页)
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