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显示项目 474636-474685 / 2348487 (共46970页)
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机构	日期	题名	作者
育達商業科技大學	2012	HOLD住體重健康三口組守護您	育達商業科技大學
朝陽科技大學	2013-06-08	HOLD匙在-鑰匙收納設計	陳毅; Chen, I
中國醫藥大學	2014-05	Hold腎求好腎注意腎臟病的各階段警訊	汪碧雲
國立臺灣大學	2002	Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150C	Cheng, I-Chun; Wagner, Sigurd
臺大學術典藏	2018-09-10T04:12:41Z	Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150°C	Cheng, I.-C.; Wagner, S.; I-CHUN CHENG
國立臺灣大學	2004	Hole concentration in the three-CuO2-plane copper-oxide superconductor Cu-1223	Karppinen, M; Yamauchi, H; Morita, Y; Kitabatake, M; Motohashi, T; Liu, RS; Lee, JM; Chen, JM
臺大學術典藏	2018-09-10T04:48:15Z	Hole concentration in the three-CuO2-plane copper-oxide superconductor Cu-1223	RU-SHI LIU; Chen, J. M.; Karppinen, M.;Yamauchi, H.;Morita, Y.;Kitabatake, M.;Motohashi, T.;Liu, R. S.;Lee, J. M.;Chen, J. M.; Karppinen, M.; Yamauchi, H.; Morita, Y.; Kitabatake, M.; Motohashi, T.; Liu, R. S.; Lee, J. M.
臺大學術典藏	2006	Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors	Lin, Yu Min; Wu, San Lein; Chang, Shoou Jinn; Chen, Pang Shiu; Liu, Chee Wee; Lin, Yu Min; Wu, San Lein; Chang, Shoou Jinn; Chen, Pang Shiu; Liu, Chee Wee
國立臺灣大學	2006	Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors	Lin, Yu Min; Wu, San Lein; Chang, Shoou Jinn; Chen, Pang Shiu; Liu, Chee Wee
國立成功大學	2006-05	Hole confinement and 1/f noise characteristics of SiGe double-quantum-well p-type metal-oxide-semiconductor field-effect transistors	Lin, Yu-Min; Wu, San-Lein; Chang, Shoou-Jinn; Chen, Pang-Shiu; Liu, C. W.
臺大學術典藏	2018-09-10T05:58:50Z	Hole confinement and 1/f noise characteristics of SiGe double-quantum-well p-Type metal-oxide-semiconductor field-effect transistors	Lin, Y.M.; San Lein, W.U.; Chang, S.J.; Chen, P.S.; Liu, C.W.; CHEE-WEE LIU
國立臺灣大學	2006	Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices	Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W.
國立臺灣大學	2006	Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices	Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W.
臺大學術典藏	2018-09-10T05:58:49Z	Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices	Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W.; CHEE-WEE LIU
元智大學	2004-06	Hole detection from a multi-layer PCB image	吳家豪; 胡文豐; 陳永盛
臺大學術典藏	2018-09-10T05:51:46Z	Hole distribution in (Tl0.5Pb0.5)Sr-2(Ca1-xYx)Cu2O7 studied by x-ray absorption spectroscopy	Chen, J. M.;Liu, R. S.;Liang, W. Y.; Chen, J. M.; Liu, R. S.; Liang, W. Y.; RU-SHI LIU
臺大學術典藏	2018-09-10T06:21:48Z	Hole distribution in the underdoped, optimally doped, and overdoped superconductors (Tl0.5Pb0.5)Sr-2(Ca1-xYx)Cu2O7	Liu, R. S.;Chen, J. M.;Liang, W. Y.; Liu, R. S.; Chen, J. M.; Liang, W. Y.; RU-SHI LIU
臺大學術典藏	2018-09-10T06:56:05Z	Hole distribution in underdoped and overdoped Y(Ba2-ySry)Cu3O6+delta compounds studied by X-ray absorption spectroscopy	Liu, R. S.;Chang, C. Y.;Chen, J. M.; Liu, R. S.; Chang, C. Y.; Chen, J. M.; RU-SHI LIU
國立交通大學	2014-12-08T15:38:44Z	Hole distribution in YxPr1-xBa2Cu4O8 and YxPr1-xBa2Cu3O7 probed by X-ray absorption spectroscopy	Chen, JM; Liu, SJ; Lee, JM; Lin, JY; Gou, YS; Yang, HD
國立臺灣大學	2005-06	Hole Distribution of Intercalated Cuprates Using x-ray Absorption Spectroscopy	Chen, J.M.; Chang, S.C.; Liu, R.S.; Lee, J.M.; Park, M.; Choy, J.H.
臺大學術典藏	2018-09-10T05:16:51Z	Hole distribution of intercalated cuprates using x-ray absorption spectroscopy	Chen, J. M.; Chang, S. C.; Liu, R. S.; Lee, J. M.; Park, M.; Choy, J. H.; Chen, J. M.; Chang, S. C.; Liu, R. S.; Lee, J. M.; Park, M.; Choy, J. H.; RU-SHI LIU
國立臺灣大學	2005	Hole doping and superconductivity characteristics of the s=1, 2 and 3 members of the (Cu,Mo)-12s2 homologous series of layered copper oxides	Karppinen, M; Morita, Y; Kobayashi, T; Grigoraviciute, I; Chen, JM; Liu, RS; Yamauchi, H
臺大學術典藏	2018-09-10T05:16:51Z	Hole doping and superconductivity characteristics of the s=1, 2 and 3 members of the (Cu,Mo)-12s2 homologous series of layered copper oxides	Karppinen, M.;Morita, Y.;Kobayashi, T.;Grigoraviciute, I.;Chen, J. M.;Liu, R. S.;Yamauchi, H.; Karppinen, M.; Morita, Y.; Kobayashi, T.; Grigoraviciute, I.; Chen, J. M.; Liu, R. S.; Yamauchi, H.; Hung, Ming-Hui; RU-SHI LIU; Cheng, Ya-Jung
國立交通大學	2019-04-03T06:44:45Z	Hole doping by molecular oxygen in organic semiconductors: Band-structure calculations	Lu, Chi-Ken; Meng, Hsin-Fei
臺大學術典藏	2018-09-10T04:28:28Z	Hole doping in Pb-free and Pb-substituted (Bi,Pb)(2)Sr2Ca2Cu3O10+delta superconductors	Karppinen, M.;Lee, S.;Lee, J. M.;Poulsen, J.;Nomura, T.;Tajima, S.;Chen, J. M.;Liu, R. S.;Yamauchi, H.; Karppinen, M.; Lee, S.; Lee, J. M.; Poulsen, J.; Nomura, T.; Tajima, S.; Chen, J. M.; Liu, R. S.; Yamauchi, H.; RU-SHI LIU
臺大學術典藏	2018-09-10T05:51:44Z	Hole doping into Co-12s2 copper oxides with s fluorite-structured layers between CuO2 planes	Fjellvag, H.; Fjellvag, H.; RU-SHI LIU
國立臺灣大學	2006	Hole doping into Co-12s2 copper oxides with s fluorite-structured layers between CuO2 planespiezolaminated composite plate	Fjellvag, H.; Moritaa, Y.; Nagai, T.; Lee, J.M.; Chen, J.M.; Liu, R.S.; Hauback, B.C.; Awana, V.P.S.; Matsui, Y.; Yamauchi, H.; Karppinen, M.
中原大學	2004-11-01	Hole Effective Mass in Strained Si1-xCx Alloys	C. Y. Lin;S. T. Chang;C. W. Liu
國立臺灣大學	2004	Hole effective mass in strained Si1-xCx alloys	Lin, C. Y.; Chang, S. T.; Liu, C. W.
臺大學術典藏	2018-09-10T04:55:28Z	Hole effective mass in strained Si1-xCx alloys	Chang, S.T.; Liu, C.W.; CHEE-WEE LIU; Lin, C.Y.; Lin, C.Y.;Chang, S.T.;Liu, C.W.
國立交通大學	2014-12-08T15:11:49Z	Hole Effective Masses as a Booster of Self-Consistent Six-Band k . p Simulation in Inversion Layers of pMOSFETs	Chen, Ming-Jer; Lee, Chien-Chih; Cheng, Kuan-Hao
國立臺灣大學	1997	Hole effective masses in relaxed Si1 - xCx and Si1 - yGey alloys	Lin, C. Y.; Liu, C. W.
臺大學術典藏	2018-09-10T06:31:22Z	Hole effective masses in relaxed Si1-xCx and Si1-yGey alloys	Lin, C.Y.; Liu, C.W.; CHEE-WEE LIU
國立成功大學	2007-04-16	Hole escape processes detrimental to photoluminescence efficiency in a blue InGaN multiple-quantum-well diode under reverse bias conditions	Inoue, T.; Fujiwara, K.; Sheu, Jinn-Kong
修平科技大學	2005	Hole Flanging with Multi-Action Extrusion(孔凸緣複動化擠伸成形)	林恆勝;吳家宏
國立交通大學	2017-04-21T06:49:23Z	Hole g-Factor Anisotropies in Individual InAs Quantum Rings	Kaji, R.; Tominaga, T.; Wu, Y. -N.; Wu, M. -F.; Cheng, S. -J.; Adachi, S.
國立交通大學	2014-12-08T15:38:13Z	Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer	Wang, C. H.; Ke, C. C.; Lee, C. Y.; Chang, S. P.; Chang, W. T.; Li, J. C.; Li, Z. Y.; Yang, H. C.; Kuo, H. C.; Lu, T. C.; Wang, S. C.
國立交通大學	2014-12-08T15:31:58Z	Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer	Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chen, Jenn-Fang; Su, Yan-Kuin
國立成功大學	2013-08	Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer	Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chen, Jenn-Fang; Su, Yan-Kuin
國立交通大學	2014-12-08T15:35:07Z	Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer	Lin, Bing-Cheng; Chen, Kuo-Ju; Wang, Chao-Hsun; Chiu, Ching-Hsueh; Lan, Yu-Pin; Lin, Chien-Chung; Lee, Po-Tsung; Shih, Min-Hsiung; Kuo, Yen-Kuang; Kuo, Hao-Chung
國立交通大學	2014-12-08T15:29:53Z	Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric	Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung
國立成功大學	2013-02-18	Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric	Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung
淡江大學	1997-12	Hole localization in Pr-doped RBa2Cu3O7−y systems	Kao, H.-C. I.; Yu, F. C.; Guan, W.
國立臺灣海洋大學	2007-12-11	Hole Mobilities of 2,7- and 2,2'-Disubstituted 9,9'-Spirobifluorene-Based Triaryldiamines and Their Application as Hole Transport Materials in OLEDs	Yuan-Li Liao;Wen-Yi Hung;Tei-Hung Hou;Chi-Yen Lin;Ken-Tsung Wong
臺大學術典藏	2018-09-10T06:28:01Z	Hole mobilities of 2,7- And 2,2-disubstituted 9,9′-spirobifluorene- based triaryldiamines and their application as hole transport materials in OLEDs	Liao, Y.-L.; Hung, W.-Y.; Hou, T.-H.; Lin, C.-Y.; Wong, K.-T.; KEN-TSUNG WONG
國立臺灣海洋大學	2007-12-15	Hole mobilities of 2,7- and 2,2’-Disubstituted 9,9’-Spirobifluorene-based Triaryldiamines and Their Applications as Hole Transporting Material	洪文誼; Wen-Yi Hung
臺大學術典藏	2007	Hole Mobilities of 2,7- and 2,2′-Disubstituted 9,9′-Spirobifluorene-Based Triaryldiamines and Their Application as Hole Transport Materials in OLEDs	Hou, Tei-Hung; Lin, Chi-Yen; Wong, Ken-Tsung; Hung, Wen-Yi; Liao, Yuan-Li; Liao, Yuan-Li; Hung, Wen-Yi; Hou, Tei-Hung; Lin, Chi-Yen; Wong, Ken-Tsung
國立臺灣大學	2007	Hole Mobilities of 2,7- and 2,2′-Disubstituted 9,9′-Spirobifluorene-Based Triaryldiamines and Their Application as Hole Transport Materials in OLEDs	Liao, Yuan-Li; Hung, Wen-Yi; Hou, Tei-Hung; Lin, Chi-Yen; Wong, Ken-Tsung
國立臺灣海洋大學	2009-02-01	Hole Mobilities of Thermally Polymerized Triaryldiamine Derivatives and Their Application as Hole Transport Materials in Organic Light-Emitting Diodes (OLEDs)	Chi-Yen Lin;You-Ming Chen;Hsiao-Fan Chen;Fu-Chuan Fang;Yu-Cheng Lin;Wen-Yi Hung;Ken-Tsung Wong;Raymond C. Kwong;Sean C. Xia
臺大學術典藏	2018-09-10T07:33:57Z	Hole mobilities of thermally polymerized triaryldiamine derivatives and their application as hole-transport materials in organic light-emitting diodes (OLEDs)	Lin, C.-Y.; Chen, Y.-M.; Chen, H.-F.; Fang, F.-C.; Lin, Y.-C.; Hung, W.-Y.; Wong, K.-T.; Kwong, R.C.; Xia, S.C.; Lin, C.-Y.; Chen, Y.-M.; Chen, H.-F.; Fang, F.-C.; Lin, Y.-C.; Hung, W.-Y.; Wong, K.-T.; Kwong, R.C.; Xia, S.C.; KEN-TSUNG WONG

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