| 淡江大學 |
1997-11-29 |
1.2V low-power dynamic complementary-pass-transistor logic
|
鄭國興; Cheng, Kuo-hsing; Chen, Jian-hung |
| 國立交通大學 |
2014-12-08T15:19:21Z |
1.2V sub-nanoampere A/D converter
|
Rachmuth, G; Yang, YS; Poon, CS |
| 國立虎尾科技大學 |
2011 |
1.2伏特十位元低功率連續逼近式類比數位轉換器
|
陳俊甫 |
| 國立虎尾科技大學 |
2015 |
1.2伏特十位元連續逼近式類比數位轉換器設計與製作
|
陳得勤 |
| 國立臺灣大學 |
2004-02 |
1.3 /spl mu/m GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy
|
Liu, P.W.; Liao, G.H.; Lin, H.H. |
| 國立臺灣大學 |
2003-10 |
1.3 /spl mu/m ln(Ga)As/GaAs quantum-dot lasers and their dynamic properties
|
Mao, M.H.; Wu, T.Y.; Chang, F.Y.; Lin, H.H. |
| 國立東華大學 |
2003-09 |
1.3 micron single lateral mode lasers based on InAs QDs and InGaAsN quantum wells
|
祁錦雲; Jim-Yong Chi; A.R.Kovsh; D.A.Livshits; N.A.Maleev; A.E.Zhukov; V.M.Ustinov; J.S.Wang; R.S.Hsiao; G.Lin; J.Y.Chi; N.N.Ledentsov |
| 國立中山大學 |
1988 |
1.3 mm Cobalt-Doped Current Blocking Layers Grown by MOCVD
|
W.H. Cheng;J. Pooladdej;S.Y. Huang;K.D. Buehring;A. Appelbaum;D. Wolf;D. Renner |
| 國立中山大學 |
1992-07 |
1.3 mm InGaAsP Fabry-Perot Lasers with Reduced Pulse Jitter and Power Penalty
|
W.H. Cheng; J.M. Dugan;J.C. Miller; D. Renner;T.C. McDermott; C.B. Su |
| 國立成功大學 |
2004-07-25 |
1.3 mu m InAs quantum dot resonant cavity light emitting diodes
|
Su, Yan-Kuin; Yu, H. C.; Chang, Shoou-Jinn; Lee, C. T.; Wang, J. S.; Kovsh, A. R.; Wu, Y. T.; Lin, K. F.; Huang, C. Y. |
| 國立交通大學 |
2014-12-08T15:18:11Z |
1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection
|
Peng, PC; Chang, YH; Kuo, HC; Tsai, WK; Lin, G; Lin, CT; Yu, HC; Yang, HP; Hsiao, RS; Lin, KF; Chi, JY; Chi, S; Wang, SC |
| 國立成功大學 |
2009 |
1.3 mu m Strain-Compensated InGaAsP Planar Buried Heterostructure Laser Diodes with a TO-Can Package for Optical Fiber Communications
|
Tsai, Chia-Lung; Chou, Yi-Lun; Wang, Y. S.; Chang, Shoou-Jinn; Wu, Meng-Chyi; Lin, W. |
| 國立虎尾科技大學 |
2007 |
1.3 μm Ga0.11In0.89As0.24P0.76/Ga0.27In0.73As0.67P0.33 compressive-strain multiple quantum well with n-type modulation-doped GaInP intermediate-barrier laser diodes
|
Lei, Po-Hsun |
| 國立臺灣大學 |
2004-02-05 |
1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy
|
Liu, P.W.; Liao, G.H.; Lin, H.H. |
| 國立臺灣大學 |
2004 |
1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy
|
Liu, P.-W.; Liao, G.-H.; Lin, H.-H. |
| 臺大學術典藏 |
2018-09-10T04:33:07Z |
1.3 μm In(Ga)As/GaAs quantum-dot lasers and their dynamic properties
|
Mao, M.-H.; Wu, T.-Y.; Chang, F.-Y.; Lin, H.-H.; MING-HUA MAO |
| 國立東華大學 |
2003-12 |
1.3 μm InAs-InGaAs quantum dot VCSELs on GaAs substrates with all-semiconductor DBRs
|
祁錦雲; Jim-Yong Chi; J. S. Wang; N. A. Maleev; A. R. Kovsh; R. S. Hsiao; C. M. Lai; L. Wei; J. F. Chen; J. A. Lott; N. N. Ledentsov; V. M. Ustinov; J. Y. Chi |
| 國立東華大學 |
2005 |
1.3 μm Quantum Dot Vertical Cavity Surface Emitting Laser with External Light Injection
|
祁錦雲; Jim-Yong Chi; P. C. Peng; Y. H. Chang; H. C. Kuo; W. K. Tsai; Gray Lin;C. T. Lin; H. C. Yu; H. P. Yang; R. S. Hsiao; K. F. Lin;S. Chi; S. C. Wang |
| 國立東華大學 |
2003-12 |
1.3 m InGaAsN Edge Emitting Lasers with Near-Circular Beam Divergence
|
祁錦雲; Jim-Yong Chi; G. Lin; I. F. Chen;J. S. Wang; R. S. Hsiao; L. Wei;J. Y. Chi; D. A. Livshits; A. R. Kovsh;V. M. Ustinov |
| 國立東華大學 |
2002-12 |
1.3 m lasers based on InAs/GaAs quantum dots with high optical gain
|
祁錦雲; Jim-Yong Chi; R. Kovsh; N. A. Maleev; A. E. Zhukov; S. S. Mikhrin; D. A. Livshits; Y. M. Shernyakov; A . 11 V. Sakharov; M. V. Maximov; V. M. Ustinov; Zh. I. Alferov; J. S. Wang; R. S. Shiao; L. Wei; Y. T. Wu; G. Lin; J. Y. Chi; N. N. Ledentsov; D. Bimberg |
| 元智大學 |
2006-11 |
1.3-mu m amplifier-free all-optical 2R regenerator using two-mode injection-locked distributed feedback laser diode
|
祁甡; Chien HC; Lee CC |
| 國立交通大學 |
2014-12-08T15:17:42Z |
1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
|
Yu, HC; Wang, JS; Su, YK; Chang, SJ; Lai, FI; Chang, YH; Kuo, HC; Sung, CP; Yang, HPD; Lin, KF; Wang, JM; Chi, JY; Hsiao, RS; Mikhrin, S |
| 國立成功大學 |
2006-01 |
1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
|
Yu, H. C.; Wang, J. S.; Su, Yan-Kuin; Chang, Shoou-Jinn; Lai, Fang-I; Chang, Ya-Hsien; Kuo, Hao-Chung; Sung, C. P.; Yang, Hung-Pin D.; Lin, K. F.; Wang, J. M.; Chi, Jim-Yong; Hsiao, R. S.; Mikhrin, S. |
| 國立成功大學 |
2012-06 |
1.3-mu m InGaAsP planar buried heterostructure laser diodes with AllnAs electron stopper layer
|
Tsai, Chia-Lung; Yen, Chih-Ta; Chou, Cheng-Yi; Chang, S. J.; Wu, Meng-Chyi |
| 國立東華大學 |
2006 |
1.3-um InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
|
祁錦雲; Jim-Yong Chi; Yu, H.C.; Wang, J.S.; Su, Y.K.; Chang, S.J.; Lai, F.I.; Chang, Y.H.; Kuo, H.C.; Sung, C.P.; Yang, H.P.D.; Lin, K.F.; Wang, J.M.; Hsiao, R.S.; Mikhrin, S. |
| 國立中山大學 |
2001-07-31 |
1.3-呋喃基甲基疊氮的熱裂解反應研究 2.5,6-二亞甲基-5,6-二氫化苯幷呋喃的合成與化性探討
|
林雅玫 |
| 臺大學術典藏 |
2018-09-10T04:14:56Z |
1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE
|
L. W. Sung; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 國立臺灣科技大學 |
2017 |
1.35 GHz programmable gain amplifier for 5G mobile communication
|
Wei, Y.-L.;Chen, H.-C.;Chung, Chung C.-Y. |
| 臺大學術典藏 |
2018-09-10T04:14:57Z |
1.3m InAs/InGaAs quantum dot lasers grown by GSMBE
|
F. Y. Chang; T. C. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 國立中山大學 |
2001-06-20 |
1.3μm低損耗混合式抗共振反射波導
|
藍英哲 |
| 國立交通大學 |
2014-12-12T01:46:19Z |
1.3微米波段兩段式被動鎖模量子點雷射之研究
|
陳竑霖; 林國瑞 |
| 國立高雄師範大學 |
2012-02-08 |
1.4161平方公里的記憶-鹽埕地方數位敘事計畫
|
林芸竹; Yun-Jhu Lin |
| 大葉大學 |
2016-04 |
1.48-kV enhancement-mode AlGaN/GaN high electron mobility transistors fabricated on 6-in silicon by using fluoride-based plasma treatment
|
Yeh, Chih-Tung;Wang, Wei-Kai;Shen, Yi-Siang;Horng, Ray-Hua |
| 國立成功大學 |
2016-05 |
1.48-kV enhancement-mode AlGaN/GaN high-electron-mobility transistors fabricated on 6-in. silicon by fluoride-based plasma treatment
|
Yeh, Chih-Tung; Wang, Wei-Kai; Shen, Yi-Siang; Horng, Ray-Hua |
| 國立交通大學 |
2017-04-21T06:49:10Z |
1.48-kV enhancement-mode AlGaN/GaN high-electron-mobility transistors fabricated on 6-in. silicon by fluoride-based plasma treatment
|
Yeh, Chih-Tung; Wang, Wei-Kai; Shen, Yi-Siang; Horng, Ray-Hua |
| 國立交通大學 |
2018-08-21T05:53:58Z |
1.48-kV enhancement-mode AlGaN/GaN high-electron-mobility transistors fabricated on 6-in. silicon by fluoride-based plasma treatment
|
Yeh, Chih-Tung; Wang, Wei-Kai; Shen, Yi-Siang; Horng, Ray-Hua |
| 臺大學術典藏 |
2018-09-10T08:19:11Z |
1.4μW/channel 16-channel EEG/ECoG Processor for Smart Brain Sensor SoC
|
T.-C. Chen;T.-H. Lee;Y.-H. Chen;T.-C. Ma;T.-D. Chuang;C.-J. Chou;C.-H. Yang;T.-H. Lin;L.-G. Chen; T.-C. Chen; T.-H. Lee; Y.-H. Chen; T.-C. Ma; T.-D. Chuang; C.-J. Chou; C.-H. Yang; T.-H. Lin; L.-G. Chen; LIANG-GEE CHEN; TSUNG-HSIEN LIN |
| 國立臺灣科技大學 |
2009-11-02 |
1.5 kW Isolated Bi-directional DC-DC Converter with a Flyback Snubber
|
Wu , T.F.; Chen, Y.C.; Yang , J.G.; Huang , Y.C.; Shyu, S.S.; Lee, C.L. |
| 國立交通大學 |
2014-12-12T01:14:25Z |
1.5 kW伺服器前級電源功率因數修正之系統性能析與改善
|
李宗磬; 鄒應嶼 |
| 國立臺灣大學 |
1998-09 |
1.5 V CMOS bootstrapped dynamic logic circuit techniques (BDLCT) suitable for low-voltage deep-submicron CMOS VLSI for implementing 482 MHz digital quadrature modulator and adder
|
Lou, J.H.; Kuo, J.B. |
| 國立臺灣大學 |
1997-07 |
1.5 V CMOS full-swing energy efficient logic (EEL) circuit suitable for low-voltage and low-power VLSI applications
|
Yeh, C.C.; Lou, J.H.; Kuo, J.B. |
| 國立暨南國際大學 |
2004 |
1.5 V large-driving class-AB buffer amplifier with quiescent current control
|
黃彥中?; Huang, YC |
| 國立暨南國際大學 |
2004 |
1.5 V large-driving class-AB buffer amplifier with quiescent current control
|
盧志文?; Lu, CW |
| 臺大學術典藏 |
2022-09-21T23:30:15Z |
1.5-inch, 3207-ppi Side-by-Side OLED Display Capable of 32-Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography
|
Kozuma, Munehiro; Okamoto, Yuki; Ito, Minato; Lnoue, Hiroki; Saito, Toshihiko; Komura, Yusuke; Miyata, Shoki; Toyotaka, Kouhei; Matsuzaki, Takanori; Onuki, Tatsuya; Kobayashi, Hidetomo; Sugaya, Kentaro; Fujie, Takahiro; Okazaki, Yutaka; Hodo, Ryota; Yanagisawa, Yuichi; Wakuda, Masahiro; Murakawa, Tsutomu; Sasagawa, Shinya; Kunitake, Hitoshi; Nakamura, Daiki; Nagata, Takaaki; Fukuzaki, Shinya; Aoyama, Tomoya; Kimura, Hajime; Yen, Shih Ci; Chang, Chuan Hua; Hsieh, Wen Hsiang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO; Chang, Shou Zen; Yamazaki, Shunpei |
| 國立成功大學 |
2000-05-01 |
1.5-mu m emissions from laser-diode-pumped Nd-doped microchip solid-state lasers
|
Hwong, Siao-Lung; Chern, Jyh-Long; Otsuka, Kenju; Huang, Yu-Hsiang; Kawai, Ryoji; Ohki, K. |
| 國立臺灣科技大學 |
2011 |
1.5-V 6-10 GHz Broadband CMOS LNA and Transmitting Amplifier for DS-UWB Radio
|
Huang, J.F.;Chuang, H.R.;Lai, W.C. |
| 國立中山大學 |
1985 |
1.55 mm InGaAsP Low-Threshold Buried-Crescent Injection Lasers
|
W.H. Cheng;L. Perillo;S. Forouhar;O.K. Kim;C.L. Jiang;S.K. Sheem |
| 國立中山大學 |
2002 |
1.55 mm Non-Antireflection-Coated Fiber Grating Lasers for Single-Longitudinal Mode Operation
|
T.S. Lay;H.M. Chen;H.M. Yang;S.H. Wu;W.H. Cheng |
| 國立中山大學 |
2001 |
1.55 um and Infrared Band Photoresponsivity of Schottky Barrier Porous Silicon Photodetector
|
M.K. Lee; C.H. Chu; Y.H. Wang; S.M. Sze |
| 臺大學術典藏 |
2018-09-10T08:14:33Z |
1.55 μm photoluminescent iron silicide prepared by thermal diffusion of Iron nanoparticles into Si substrate
|
Pai, Y.-H.;Cheng, K.-N.;Lin, G.-R.; Pai, Y.-H.; Cheng, K.-N.; Lin, G.-R.; GONG-RU LIN |
