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顯示項目 444621-444630 / 2348487 (共234849頁)
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| 南台科技大學 |
2007 |
GaN-based Indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts
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管鴻; C.H. Kuo; S.J. Chang; H. Kuan |
| 國立成功大學 |
2007-06 |
GaN-based Indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts
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Kuo, C. H.; Chang, Shoou-Jinn; Kuan, H. |
| 國立成功大學 |
2009 |
GaN-Based LED with Embedded Microlens-like Structure
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Lai, Wei-Chih; Peng, Li-Chi; Chang, Ming-Nan; Shei, Shih-Chang; Hsu, Y. P.; Sheu, Jinn-Kong |
| 元智大學 |
2009-12 |
GaN-based LED with High-extraction by Natural Textured Surface
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賴芳儀; Yao Lung Hsieh; S. Y. Kuo |
| 國立交通大學 |
2014-12-08T15:20:50Z |
GaN-Based LEDs Grown on HVPE Growth High Crystalline Quality Thick GaN Template
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Lin, D. W.; Lin, C. C.; Chiu, C. H.; Lee, C. Y.; Yang, Y. Y.; Li, Z. Y.; Lai, W. C.; Lu, T. C.; Kuo, H. C.; Wang, S. C. |
| 國立成功大學 |
2009-07 |
GaN-Based LEDs Output Power Improved by Textured GaN/Sapphire Interface Using In Situ SiH4 Treatment Process During Epitaxial Growth
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Tsai, C. M.; Sheu, Jinn-Kong; Lai, Wei-Chih; Lee, Ming-Lun; Chang, Shoou-Jinn; Chang, C. S.; Ko, T. K.; Shen, C. F. |
| 南台科技大學 |
2009 |
GaN-based LEDs output power improved by textured GaN/sapphire interface using in-situ SiH4 treatment process during epitaxial growth
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李明倫; C. M. Tsai; J. K. Sheu; W.C. Lai; M. L. Lee; J. Chang; S. Chang; T. K. Ko; C. F. Shen |
| 臺大學術典藏 |
2018-09-10T08:42:13Z |
GaN-based LEDs surrounded with a two-dimensional nanohole photonic crystal structure for effective laterally guided mode coupling
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Yun-Wei Cheng; Szu-Chieh Wang; Yu-Feng Yin; Liang-Yu Su; JianJang Huang; JIAN-JANG HUANG |
| 國立成功大學 |
2012-09-15 |
GaN-Based LEDs With a Chirped Multiquantum Barrier Structure
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Lin, Yu-Yao; Chuang, Ricky W.; Chang, Shoou-Jinn; Li, Shuguang; Jiao, Zhi-Yong; Ko, Tsun-Kai; Hon, S. J.; Liu, C. H. |
| 國立成功大學 |
2011-08 |
GaN-Based LEDs With Air Voids Prepared by Laser Scribing and Chemical Etching
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Shei, S. C.; Lo, H. M.; Lai, W. C.; Lin, W. C.; Chang, S. J. |
顯示項目 444621-444630 / 2348487 (共234849頁)
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