| 南台科技大學 |
2007 |
GaN-based Indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts
|
管鴻; C.H. Kuo; S.J. Chang; H. Kuan |
| 國立成功大學 |
2007-06 |
GaN-based Indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts
|
Kuo, C. H.; Chang, Shoou-Jinn; Kuan, H. |
| 國立成功大學 |
2009 |
GaN-Based LED with Embedded Microlens-like Structure
|
Lai, Wei-Chih; Peng, Li-Chi; Chang, Ming-Nan; Shei, Shih-Chang; Hsu, Y. P.; Sheu, Jinn-Kong |
| 元智大學 |
2009-12 |
GaN-based LED with High-extraction by Natural Textured Surface
|
賴芳儀; Yao Lung Hsieh; S. Y. Kuo |
| 國立交通大學 |
2014-12-08T15:20:50Z |
GaN-Based LEDs Grown on HVPE Growth High Crystalline Quality Thick GaN Template
|
Lin, D. W.; Lin, C. C.; Chiu, C. H.; Lee, C. Y.; Yang, Y. Y.; Li, Z. Y.; Lai, W. C.; Lu, T. C.; Kuo, H. C.; Wang, S. C. |
| 國立成功大學 |
2009-07 |
GaN-Based LEDs Output Power Improved by Textured GaN/Sapphire Interface Using In Situ SiH4 Treatment Process During Epitaxial Growth
|
Tsai, C. M.; Sheu, Jinn-Kong; Lai, Wei-Chih; Lee, Ming-Lun; Chang, Shoou-Jinn; Chang, C. S.; Ko, T. K.; Shen, C. F. |
| 南台科技大學 |
2009 |
GaN-based LEDs output power improved by textured GaN/sapphire interface using in-situ SiH4 treatment process during epitaxial growth
|
李明倫; C. M. Tsai; J. K. Sheu; W.C. Lai; M. L. Lee; J. Chang; S. Chang; T. K. Ko; C. F. Shen |
| 臺大學術典藏 |
2018-09-10T08:42:13Z |
GaN-based LEDs surrounded with a two-dimensional nanohole photonic crystal structure for effective laterally guided mode coupling
|
Yun-Wei Cheng; Szu-Chieh Wang; Yu-Feng Yin; Liang-Yu Su; JianJang Huang; JIAN-JANG HUANG |
| 國立成功大學 |
2012-09-15 |
GaN-Based LEDs With a Chirped Multiquantum Barrier Structure
|
Lin, Yu-Yao; Chuang, Ricky W.; Chang, Shoou-Jinn; Li, Shuguang; Jiao, Zhi-Yong; Ko, Tsun-Kai; Hon, S. J.; Liu, C. H. |
| 國立成功大學 |
2011-08 |
GaN-Based LEDs With Air Voids Prepared by Laser Scribing and Chemical Etching
|
Shei, S. C.; Lo, H. M.; Lai, W. C.; Lin, W. C.; Chang, S. J. |
| 國立成功大學 |
2011-09-15 |
GaN-Based LEDs With Air Voids Prepared by One-Step MOCVD Growth
|
Lin, N. M.; Chang, S. J.; Shei, S. C.; Lai, W. C.; Yang, Y. Y.; Lin, W. C.; Lo, H. M. |
| 國立交通大學 |
2014-12-08T15:17:16Z |
GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror
|
Lee, YJ; Hwang, JM; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ; Lu, TC; Kuo, HC; Wang, SC |
| 國立成功大學 |
2013-01-01 |
GaN-Based LEDs With an HT-AlN Nucleation Layer Prepared on Patterned Sapphire Substrate
|
Chang, Chung-Ying; Chang, Shoou-Jinn; Liu, C. H.; Li, Shuguang; Chen, Evan |
| 國立成功大學 |
2012-02 |
GaN-based LEDs with Ar plasma treatment
|
Kuo, D. S.; Lam, K. T.; Wen, K. H.; Chang, S. J.; Ko, T. K.; Hon, S. J. |
| 國立成功大學 |
2012-10-15 |
GaN-Based LEDs With Double Strain Releasing MQWs and Si Delta-Doping Layers
|
Chang, Chung-Ying; Chang, Shoou-Jinn; Liu, C. H.; Li, Shuguang; Lin, T. K. |
| 國立成功大學 |
2009-11-15 |
GaN-Based LEDs With GaN mu-Pillars Around Mesa, Patterned Substrate, and Reflector Under Pads
|
Peng, Li-Chi; Lai, Wei-Chih; Chang, Ming-Nan; Shei, Shih-Chang; Sheu, Jinn-Kong |
| 臺大學術典藏 |
2018-09-10T08:14:34Z |
GaN-Based LEDs with High Emission Directionality Using Photonic Crystal Structures for Sidewall Reflection and Light Extraction
|
Yun-Wei Cheng;Szu-Chieh Wang;Jin Yi Tan;Yu-Hsuan Sun;Sheng-Chieh Yang;JianJang Huang; Yun-Wei Cheng; Szu-Chieh Wang; Jin Yi Tan; Yu-Hsuan Sun; Sheng-Chieh Yang; JianJang Huang; JIAN-JANG HUANG |
| 國立成功大學 |
2014-12 |
GaN-Based LEDs With Hot/Cold Factor Improved by the Electron Blocking Layer
|
Lam, Kin-Tak; Chang, Shoou-Jinn |
| 國立成功大學 |
2009-09 |
GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars
|
Lai, Wei-Chihh; Chen, P. H.; Chang, L. C.; Kuo, Cheng-Huang; Sheu, Jinn-Kong; Tun, Chun-Ju; Shei, Shih-Chang |
| 國立成功大學 |
2012 |
GaN-Based LEDs with Nano-Patterns by Contact-Transferred and Mask-Embedded Lithography and Cl-2/N-2 Plasma Etching
|
Zeng, X. F.; Shei, S. C.; Chang, S. J. |
| 國立成功大學 |
2012-05-15 |
GaN-Based LEDs With Omnidirectional Metal Underneath an Insulating SiO2 Layer
|
Lin, Nan-Ming; Shei, Shih-Chang; Chang, Shoou-Jinn; Zeng, Xu-Feng |
| 臺大學術典藏 |
2018-09-10T08:42:14Z |
GaN-based LEDs with Photonic Crystal Nanorod Sidewall Reflectors for Versatile Radiation Directionality Control
|
Yun-Wei Cheng;Szu-Chieh Wang;Yu-Feng Yin;JianJang Huang; Yun-Wei Cheng; Szu-Chieh Wang; Yu-Feng Yin; JianJang Huang; JIAN-JANG HUANG |
| 國立成功大學 |
2014-01 |
GaN-Based LEDs With Rough Surface and Selective KOH Etching
|
Chang, Shoou-Jinn; Chang, L. M.; Kuo, D. S.; Ko, T. K.; Hon, S. J.; Li, Shuguang |
| 國立成功大學 |
2012-02 |
GaN-Based LEDs with Sapphire Debris Removed by Phosphoric Etching
|
Chang, Shoou-Jinn; Kuo, D. S.; Lam, K. T.; Wen, K. H.; Ko, T. K.; Hon, S. J. |
| 國立成功大學 |
2012-09-24 |
GaN-based light emitting diodes with micro- and nano-patterned structures by femtosecond laser nonlinear decomposition
|
Chen, Jiun-Ting; Lai, Wei-Chih; Chang, Yun-Chorng; Sheu, Jinn-Kong; Sen, Wen-Chih |
