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顯示項目 596026-596035 / 2348570 (共234857頁) << < 59598 59599 59600 59601 59602 59603 59604 59605 59606 59607 > >> 每頁顯示[10|25|50]項目
| 淡江大學 |
2002-08 |
MOS Charge Pump for Sub-2.0V Operation
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Cheng, Kuo-Hsing; Chang, Chung-Yu |
| 國立交通大學 |
2014-12-08T15:05:35Z |
MOS DEVICE PARAMETER OPTIMIZATION BASED ON TRANSIENT TRAJECTORY CONSIDERATIONS
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WU, CY; JANG, WY; LIU, ID |
| 臺大學術典藏 |
2018-09-10T14:56:27Z |
MOS Devices with Ultra-High Dielectric Constants and Methods of Forming the Same
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Liao, Ming-Han;Hong, Minghwei; Liao, Ming-Han; Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2019-03-11T08:02:07Z |
MOS Devices with UltraHigh Dielectric Constants and Methods of Forming the Same
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M.Hongh;M.H.Liao; M.H.Liao; M.Hongh |
| 臺大學術典藏 |
2018-09-10T06:28:16Z |
MOS Ge Diodes Based on High kappa Gate Dielectrics Grown by MBE and ALD
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Lee, Kun Yu; Lee, WC; Lin, TD; Lee, CS; Chang, YC; Lee, YJ; Huang, ML; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG |
| 國立臺灣大學 |
2003-12 |
MOS Ge/Si quantum dot infrared photodetectors with quantum dot and wetting layer responses
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Hsu, B.C.; Chang, S.T.; Kuo, P.S.; Chen, P.S.; Liu, C.W.; Lu, J.H.; Kuan, C.H. |
| 國立交通大學 |
2014-12-08T15:01:54Z |
MOS magnetic current sensor based on standard CMOS process
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Yang, HM; Lei, TF; Huang, YC; Lee, CL |
| 國立交通大學 |
2019-04-02T06:00:22Z |
MOS magnetic current sensor based on standard CMOS process
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Yang, HM; Lei, TF; Huang, YC; Lee, CL |
| 臺大學術典藏 |
2018-09-10T04:51:29Z |
MOS multimedia E-mail system
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Ouhyoung, Ming; MING OUHYOUNG et al.; Chen, Wen-Chin; Lei, Yuong-Wei; Chang, Keh-Ning; Liang, Ching-Lun; Wang, Shwu-Fen; Yan, Yung-Huei; Wu, Jiann-Rong; Chen, Herng-Yow; Liu, Nien-Bao; Wang, Yin-Lai; Hwu, Tzong-Yin; Su, Wei-Ming; Liang, Rung-Heui; Fu, Kuo-Chang |
| 國立臺灣大學 |
2011 |
MOS photodetectors based on Au-nanorod doped graphene electrodes
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Chen, Yung-Ting; Hsieh, Ya-Ping; Shih, Fu-Yu; Chang, Chih-Yung; Hofmann, Mario; Chen, Yang-Fang |
顯示項目 596026-596035 / 2348570 (共234857頁) << < 59598 59599 59600 59601 59602 59603 59604 59605 59606 59607 > >> 每頁顯示[10|25|50]項目
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