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顯示項目 876016-876025 / 2348719 (共234872頁)
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| 臺大學術典藏 |
2018-09-10T08:15:11Z |
Threshold voltage and mobility extraction of NBTI degradation of poly-Si thin-film transistors
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Sun, H.-C.;Huang, C.-F.;Chen, Y.-T.;Wu, T.-Y.;Liu, C.W.;Hsu, Y.-J.;Chen, J.-S.; Sun, H.-C.; Huang, C.-F.; Chen, Y.-T.; Wu, T.-Y.; Liu, C.W.; Hsu, Y.-J.; Chen, J.-S.; CHEE-WEE LIU |
| 臺大學術典藏 |
2015 |
Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
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Lin, Y.-W.; Huang, Y.-L.; Hung, J.-H.; Lin, B.-R.; Yang, L.; Wu, C.-H.; Wu, T.-K.; Wu, C.-H.; Peng, L.-H.; CHAO-HSIN WU; Yeh, P.-C.; Yeh, P.-C.;Lin, Y.-W.;Huang, Y.-L.;Hung, J.-H.;Lin, B.-R.;Yang, L.;Wu, C.-H.;Wu, T.-K.;Wu, C.-H.;Peng, L.-H. |
| 臺大學術典藏 |
2020-06-11T06:31:11Z |
Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
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Yeh, P.-C.;Lin, Y.-W.;Huang, Y.-L.;Hung, J.-H.;Lin, B.-R.;Yang, L.;Wu, C.-H.;Wu, T.-K.;Wu, C.-H.;Peng, L.-H.; Yeh, P.-C.; Lin, Y.-W.; Huang, Y.-L.; Hung, J.-H.; Lin, B.-R.; Yang, L.; Wu, C.-H.; Wu, T.-K.; Wu, C.-H.; Peng, L.-H.; LUNG-HAN PENG |
| 國立交通大學 |
2014-12-08T15:30:30Z |
Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells
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Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 臺大學術典藏 |
2013 |
Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells
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VITA PI-HO HU; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 |
| 國立交通大學 |
2014-12-08T15:31:13Z |
Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold Operation
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Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 臺大學術典藏 |
2020-10-07T01:23:16Z |
Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold Operation
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VITA PI-HO HU; C.-T. Chuang; P. Su; M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU |
| 國立成功大學 |
2021 |
Threshold Voltage Engineering of Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Different Doping Concentration of in Situ Cl-Doped Al2O3
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Liu, H.-Y.;Lin, C.-W.;Lee, C.-S.;Hsu, W.-C. |
| 國立交通大學 |
2014-12-08T15:24:27Z |
Threshold Voltage Fluctuation in 16-nm-Gate FinFETs Induced by Random Work Function of Nanosized Metal Grain
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Li, Yiming; Cheng, Hui-Wen; Hwang, Chi-Hong |
| 國立交通大學 |
2014-12-16T06:13:57Z |
Threshold voltage measurement device
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Chuang Ching-Te; Jou Shyh-Jye; Lin Geng-Cing; Wang Shao-Cheng; Lin Yi-Wei; Tsai Ming-Chien; Shih Wei-Chiang; Lien Nan-Chun; Lee Kuen-Di; Chu Jyun-Kai |
顯示項目 876016-876025 / 2348719 (共234872頁)
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