| 國立成功大學 |
2002 |
GaAs(N11)A/B 基板上成長之InGaAs 量子點其光學性質,壓電效應,表層厚度與空間分析之研究(2/2)
|
田興龍 |
| 國立臺灣大學 |
1993 |
GaAs-AlxGa1-xAs系統電子及電網Subband Energy之度量
|
張顏暉; Chang, Yuan-Huei |
| 臺大學術典藏 |
2018-09-10T07:02:54Z |
GaAs-based bipolar cascade light-emitting-diodes and superluminescent- diodes at the 1.04-μm wavelength regime
|
Guol, S.-H. and Wang Jr., H. and Wu, Y.-H. and Lin, W. and Yang, Y.-J. and Sun, C.-K. and Pan, C.-L. and Shi, J.-W.; CHI-KUANG SUN |
| 臺大學術典藏 |
2018-09-10T03:29:19Z |
GaAs-based long-wavelength traveling-wave photodetector
|
Shi, Jin-Wei; Sun, Chi-Kuang; Yang, Ying-Jay; Chiu, Yi-Jen; Bowers, John E.; CHI-KUANG SUN |
| 臺大學術典藏 |
2018-09-10T03:51:07Z |
GaAs-based long-wavelength traveling-wave photodetector
|
Y. J. Yang,; J. E. Bowers; YING-JAY YANG; J.-W. Shi; K.-G. Gan; Y.-J. Chiu; C.-K. Sun |
| 臺大學術典藏 |
2019-12-27T07:49:50Z |
GaAs-based metal-oxide semiconductor field-effect transistors with Al 2 O 3 gate dielectrics grown by atomic layer deposition
|
Ye, P.D.; Wilk, G.D.; Yang, B.; Kwo, J.; Gossmann, H.-J.L.; Frei, M.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:58Z |
GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition
|
Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition
|
Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG |
| 南台科技大學 |
2021-11 |
GaAs-Based p-i-n Narrow Bandpass 850 nm IR Photodetector With a p-AlGaAs Filter Layer
|
Chun-Kai Wang;Yu-Zung Chiou;Yi-Lo Huang |
| 臺大學術典藏 |
2018-09-10T07:35:54Z |
GaAs-based transverse junction superluminescent diode at 1.1um wavelength region
|
Guol, S.-H.;Chou, M.-G.;Wang, J.-H.;Yang, Y.-J.;Sun, C.-K.;Shi, J.-W.; Guol, S.-H.; Chou, M.-G.; Wang, J.-H.; Yang, Y.-J.; Sun, C.-K.; Shi, J.-W.; CHI-KUANG SUN |
| 臺大學術典藏 |
2018-09-10T08:14:03Z |
GaAs-based transverse junction superluminescent diodes with strain-compensated InGaAs-GaAsP multiple-quantum-wells at 1.1-μm wavelength
|
Guol, S.-H.;Chou, M.-G.;Yang, Y.-J.;Sun, C.-K.;Shi, J.-W.; Guol, S.-H.; Chou, M.-G.; Yang, Y.-J.; Sun, C.-K.; Shi, J.-W.; CHI-KUANG SUN |
| 臺大學術典藏 |
2010 |
GaAs-Based Transverse Junction Superluminescent Diodes with Strain-Compensated InGaAs/GaAsP Multiple-Quantum-Wells at 1.1μm Wavelength
|
Guol, Shi-Hao; Chou, Ming-Ge; Yang, Ying-Jay; Sun, Chi-Kuang; Shi, Jin-Wei; Guol, Shi-Hao; Chou, Ming-Ge; Yang, Ying-Jay; Sun, Chi-Kuang; Shi, Jin-Wei |
| 國立臺灣大學 |
2010 |
GaAs-Based Transverse Junction Superluminescent Diodes with Strain-Compensated InGaAs/GaAsP Multiple-Quantum-Wells at 1.1μm Wavelength
|
Guol, Shi-Hao; Chou, Ming-Ge; Yang, Ying-Jay; Sun, Chi-Kuang; Shi, Jin-Wei |
| 國立成功大學 |
1999 |
GAAS-BASED 微波主動元件之研究
|
蘇炎坤; 王永和; 王瑞祿 |
| 國立成功大學 |
1999 |
GaAs-Based 微波主動元件之研究-子計劃二：PHEMT 微波功率元件之研究
|
王永和 |
| 國立成功大學 |
1999 |
GAAS-BASED 微波主動元件之研究-子計畫一：HBT 高頻元件之研製
|
蘇炎坤 |
| 國立高雄師範大學 |
1998-08 |
GaAs-Based微波主動元件之研究---子計畫III：HBT高頻元件等效電路之研究
|
王瑞祿; Ruey-Lue Wang |
| 國立高雄師範大學 |
1998-08 |
GaAs-Based微波主動元件之研究---總計畫
|
蘇炎坤;王永和;王瑞祿; Ruey-Lue Wang |
| 國立高雄師範大學 |
1995 |
GaAs-InGaAs doping-channel negative-differential-resistance field-effect transistor (NDRFET)
|
Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu;Wen-Shiung Lour;Yuan-Tzu Liu;Rong-Chau Liu; 蔡榮輝 |
| 國立中山大學 |
2003-02-24 |
GaAs/Al0.3Ga0.7As雙量子井之二維電子氣在低溫高磁場下的傳導研究
|
何珮綺 |
| 國立成功大學 |
1997 |
GaAs/AlAs 超晶格界面混雜現象的研究
|
盧炎田 |
| 國立交通大學 |
2014-12-12T02:17:37Z |
GaAs/AlAs/GaAs量子結構的導納頻譜分析
|
徐念慶; Hsu, Nian-Ching; 陳振芳; Jenn-Fang Chen |
| 國立成功大學 |
1996 |
GaAs/AlAs夾層結構中的載子動力學(II)
|
盧炎田 |
| 國立成功大學 |
1995 |
GaAs/AlAs夾層結構的載子動力學研究 (I)
|
盧炎田 |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
GaAs/AlGaAs multiple quantum well GRIN-SCH vertical cavity surface emitting laser diodes
|
Wang, YH;Tai, K;Wynn, JD;Hong, M;Fischer, RJ;Mannaerts, JP;Cho, AY; Wang, YH; Tai, K; Wynn, JD; Hong, M; Fischer, RJ; Mannaerts, JP; Cho, AY; MINGHWEI HONG |
| 國立交通大學 |
2014-12-12T02:07:11Z |
GaAs/AlGaAs量子井電子傳輸的幾何效應
|
陳益德; CHEN,YI-DE; 汪大暉; WANG,DA-HUI |
| 臺大學術典藏 |
2018-09-10T03:46:45Z |
GaAs/AlxGa1- xAs quantum well infra-red photodetectors with cutoff wavelength $λ$c= 14.9 $μ$m
|
Zussman, A; Levine, BF; Hong, Mingyi; Mannaerts, JP; MINGHWEI HONG |
| 國立交通大學 |
2014-12-12T01:53:33Z |
GaAs/In(0.5)Ga(0.5)P 雙接面太陽能電池磊晶與製程的設計
|
林志遠; Lin, Chih Yuan; 余沛慈; Yu, Pei Chen |
| 國立臺灣大學 |
2009 |
GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer
|
Lin, Y.R.; Lin, H.H.; Chu, J.H. |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer
|
Y. R. Lin, H. H. Lin,;J. H. Chu; Y. R. Lin, H. H. Lin,; J. H. Chu; HAO-HSIUNG LIN |
| 國立成功大學 |
2009-03-16 |
GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
|
Lin, You-Ru; Lai, Yi-Feng; Liu, Chuan-Pu; Lin, Hao-Hsiung |
| 國立臺灣大學 |
2009 |
GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
|
Lin, You-Ru; Lai, Yi-Feng; Liu, Chuan-Pu; Lin, Hao-Hsiung |
| 國立交通大學 |
2015-11-26T00:57:08Z |
GaAsN/GaAs量子井中 光激發引致電滯曲線於不同溫度與電場之分析
|
廖思雅; Liao, Siya; 陳振芳; Chen, Jenn-Fang |
| 國立交通大學 |
2014-12-12T02:43:13Z |
GaAsN/GaAs量子井結構中光激發載子暫存降引致光電流抑制效應：等效電路RC時間常數分析
|
黃志斌; Huang, Chih-Pin; 陳振芳; Chen, Jenn-Fang |
| 國立交通大學 |
2014-12-12T01:57:30Z |
GaAsN/GaAs量子井結構中光激發載子的光電容與光電流分析
|
趙俊泓; 陳振芳 |
| 國立交通大學 |
2018-01-24T07:40:28Z |
GaAsN/GaAs量子井蕭基二極體在照光下之光電容模擬
|
許雨堤; 陳振芳; Hsu, Yu-Ti; Chen, Jenn-Fang |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
GaAsPSb and its application to heterojunction bipolar transistors
|
Y. C. Chin,;H. H. Lin,;H. S. Guo,;C. H. Huang,; Y. C. Chin,; H. H. Lin,; H. S. Guo,; C. H. Huang,; HAO-HSIUNG LIN |
| 國立成功大學 |
2012-05-28 |
GaAsSb bandgap, surface fermi level, and surface state density studied by photoreflectance modulation spectroscopy
|
Hwang, J. S.; Tsai, J. T.; Su, I. C.; Lin, H. C.; Lu, Y. T.; Chiu, P. C.; Chyi, J. I. |
| 國立臺灣海洋大學 |
2017 |
GaAsSb spacer effect in quasi-type-II InAs coupled-QDs for intraband absorption enhancement
|
David Jui-Yang Feng;Yen-Ju Lin;Yun-Cheng Ku;Han-Yun Jhang;Tzy-Rong Lin;Mao-Kuen Kuo |
| 國立臺灣海洋大學 |
2017-03 |
GaAsSb spacer effect in quasi-type-II InAs coupled-QDs for intraband absorption enhancement
|
Mao-Kuen Kuo; David Jui-Yang Feng; Yen-Ju Lin; Yun-Cheng Ku; Han-Yun Jhang; Tzy-Rong Lin |
| 臺大學術典藏 |
2020-04-28T07:14:57Z |
GaAsSb spacer effect in quasi-type-II InAs coupled-QDs for intraband absorption enhancement
|
Feng, D.J.-Y.; Lin, Y.-J.; Ku, Y.-C.; Jhang, H.-Y.; Lin, T.-R.; Kuo, M.-K.; MAO-KUEN KUO |
| 臺大學術典藏 |
2018-09-10T05:26:31Z |
GaAsSb/GaAs quantum wells grown by MBE
|
H. H. Lin,; P. W. Liu,; C. L. Tsai,; G. H. Liao,; J. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2003-09 |
GaAsSb/GaAs type-II quantum well and its application on /spl sim/1.3 /spl mu/m laser
|
Lin, Hao-Hsiung; Liu, Po-Wei; Chen, Jhe-Ren; Lin, Hao-Hsiung; Liu, Po-Wei; Chen, Jhe-Ren |
| 國立臺灣大學 |
2003-09 |
GaAsSb/GaAs type-II quantum well and its application on /spl sim/1.3 /spl mu/m laser
|
Lin, Hao-Hsiung; Liu, Po-Wei; Chen, Jhe-Ren |
| 臺大學術典藏 |
2018-09-10T04:35:08Z |
GaAsSb/GaAs type-II quantum well and its application on ~1.3m laser
|
H. H. Lin,; P. W. Liu,; J. R. Chen,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:08Z |
GaAsSb/GaAs type-II quantum wells for 1.3m diode lasers
|
HAO-HSIUNG LIN; H. H. Lin,; P. W. Liu,; G. H. Liao, |
| 臺大學術典藏 |
2018-09-10T04:58:49Z |
GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes
|
H. H. Lin,; P. W. Liu,; G. H. Liao,; C. L. Tsai,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2007-04-30 |
GaAsSb/GaAs量子結構與元件(2/2)
|
林浩雄; 林浩雄 |
| 國立臺灣大學 |
2007-04-30 |
GaAsSb/GaAs量子結構與元件(2/2)
|
林浩雄 |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
GaAsSbN grown on GaAs by gas source molecular beam epitaxy
|
T. C. Ma,; T. Y. Chen,; S. K. Chang,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
