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Showing items 466901-466925 of 2303271 (92131 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T04:12:41Z |
Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150°C
|
Cheng, I.-C.; Wagner, S.; I-CHUN CHENG |
| 國立臺灣大學 |
2004 |
Hole concentration in the three-CuO2-plane copper-oxide superconductor Cu-1223
|
Karppinen, M; Yamauchi, H; Morita, Y; Kitabatake, M; Motohashi, T; Liu, RS; Lee, JM; Chen, JM |
| 臺大學術典藏 |
2018-09-10T04:48:15Z |
Hole concentration in the three-CuO2-plane copper-oxide superconductor Cu-1223
|
RU-SHI LIU; Chen, J. M.; Karppinen, M.;Yamauchi, H.;Morita, Y.;Kitabatake, M.;Motohashi, T.;Liu, R. S.;Lee, J. M.;Chen, J. M.; Karppinen, M.; Yamauchi, H.; Morita, Y.; Kitabatake, M.; Motohashi, T.; Liu, R. S.; Lee, J. M. |
| 臺大學術典藏 |
2006 |
Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
|
Lin, Yu Min; Wu, San Lein; Chang, Shoou Jinn; Chen, Pang Shiu; Liu, Chee Wee; Lin, Yu Min; Wu, San Lein; Chang, Shoou Jinn; Chen, Pang Shiu; Liu, Chee Wee |
| 國立臺灣大學 |
2006 |
Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
|
Lin, Yu Min; Wu, San Lein; Chang, Shoou Jinn; Chen, Pang Shiu; Liu, Chee Wee |
| 國立成功大學 |
2006-05 |
Hole confinement and 1/f noise characteristics of SiGe double-quantum-well p-type metal-oxide-semiconductor field-effect transistors
|
Lin, Yu-Min; Wu, San-Lein; Chang, Shoou-Jinn; Chen, Pang-Shiu; Liu, C. W. |
| 臺大學術典藏 |
2018-09-10T05:58:50Z |
Hole confinement and 1/f noise characteristics of SiGe double-quantum-well p-Type metal-oxide-semiconductor field-effect transistors
|
Lin, Y.M.; San Lein, W.U.; Chang, S.J.; Chen, P.S.; Liu, C.W.; CHEE-WEE LIU |
| 國立臺灣大學 |
2006 |
Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices
|
Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. |
| 國立臺灣大學 |
2006 |
Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices
|
Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. |
| 臺大學術典藏 |
2018-09-10T05:58:49Z |
Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices
|
Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W.; CHEE-WEE LIU |
| 元智大學 |
2004-06 |
Hole detection from a multi-layer PCB image
|
吳家豪; 胡文豐; 陳永盛 |
| 臺大學術典藏 |
2018-09-10T05:51:46Z |
Hole distribution in (Tl0.5Pb0.5)Sr-2(Ca1-xYx)Cu2O7 studied by x-ray absorption spectroscopy
|
Chen, J. M.;Liu, R. S.;Liang, W. Y.; Chen, J. M.; Liu, R. S.; Liang, W. Y.; RU-SHI LIU |
| 臺大學術典藏 |
2018-09-10T06:21:48Z |
Hole distribution in the underdoped, optimally doped, and overdoped superconductors (Tl0.5Pb0.5)Sr-2(Ca1-xYx)Cu2O7
|
Liu, R. S.;Chen, J. M.;Liang, W. Y.; Liu, R. S.; Chen, J. M.; Liang, W. Y.; RU-SHI LIU |
| 臺大學術典藏 |
2018-09-10T06:56:05Z |
Hole distribution in underdoped and overdoped Y(Ba2-ySry)Cu3O6+delta compounds studied by X-ray absorption spectroscopy
|
Liu, R. S.;Chang, C. Y.;Chen, J. M.; Liu, R. S.; Chang, C. Y.; Chen, J. M.; RU-SHI LIU |
| 國立交通大學 |
2014-12-08T15:38:44Z |
Hole distribution in YxPr1-xBa2Cu4O8 and YxPr1-xBa2Cu3O7 probed by X-ray absorption spectroscopy
|
Chen, JM; Liu, SJ; Lee, JM; Lin, JY; Gou, YS; Yang, HD |
| 國立臺灣大學 |
2005-06 |
Hole Distribution of Intercalated Cuprates Using x-ray Absorption Spectroscopy
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Chen, J.M.; Chang, S.C.; Liu, R.S.; Lee, J.M.; Park, M.; Choy, J.H. |
| 臺大學術典藏 |
2018-09-10T05:16:51Z |
Hole distribution of intercalated cuprates using x-ray absorption spectroscopy
|
Chen, J. M.; Chang, S. C.; Liu, R. S.; Lee, J. M.; Park, M.; Choy, J. H.; Chen, J. M.; Chang, S. C.; Liu, R. S.; Lee, J. M.; Park, M.; Choy, J. H.; RU-SHI LIU |
| 國立臺灣大學 |
2005 |
Hole doping and superconductivity characteristics of the s=1, 2 and 3 members of the (Cu,Mo)-12s2 homologous series of layered copper oxides
|
Karppinen, M; Morita, Y; Kobayashi, T; Grigoraviciute, I; Chen, JM; Liu, RS; Yamauchi, H |
| 臺大學術典藏 |
2018-09-10T05:16:51Z |
Hole doping and superconductivity characteristics of the s=1, 2 and 3 members of the (Cu,Mo)-12s2 homologous series of layered copper oxides
|
Karppinen, M.;Morita, Y.;Kobayashi, T.;Grigoraviciute, I.;Chen, J. M.;Liu, R. S.;Yamauchi, H.; Karppinen, M.; Morita, Y.; Kobayashi, T.; Grigoraviciute, I.; Chen, J. M.; Liu, R. S.; Yamauchi, H.; Hung, Ming-Hui; RU-SHI LIU; Cheng, Ya-Jung |
| 國立交通大學 |
2019-04-03T06:44:45Z |
Hole doping by molecular oxygen in organic semiconductors: Band-structure calculations
|
Lu, Chi-Ken; Meng, Hsin-Fei |
| 臺大學術典藏 |
2018-09-10T04:28:28Z |
Hole doping in Pb-free and Pb-substituted (Bi,Pb)(2)Sr2Ca2Cu3O10+delta superconductors
|
Karppinen, M.;Lee, S.;Lee, J. M.;Poulsen, J.;Nomura, T.;Tajima, S.;Chen, J. M.;Liu, R. S.;Yamauchi, H.; Karppinen, M.; Lee, S.; Lee, J. M.; Poulsen, J.; Nomura, T.; Tajima, S.; Chen, J. M.; Liu, R. S.; Yamauchi, H.; RU-SHI LIU |
| 臺大學術典藏 |
2018-09-10T05:51:44Z |
Hole doping into Co-12s2 copper oxides with s fluorite-structured layers between CuO2 planes
|
Fjellvag, H.; Fjellvag, H.; RU-SHI LIU |
| 國立臺灣大學 |
2006 |
Hole doping into Co-12s2 copper oxides with s fluorite-structured layers between CuO2 planespiezolaminated composite plate
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Fjellvag, H.; Moritaa, Y.; Nagai, T.; Lee, J.M.; Chen, J.M.; Liu, R.S.; Hauback, B.C.; Awana, V.P.S.; Matsui, Y.; Yamauchi, H.; Karppinen, M. |
| 中原大學 |
2004-11-01 |
Hole Effective Mass in Strained Si1-xCx Alloys
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C. Y. Lin;S. T. Chang;C. W. Liu |
| 國立臺灣大學 |
2004 |
Hole effective mass in strained Si1-xCx alloys
|
Lin, C. Y.; Chang, S. T.; Liu, C. W. |
Showing items 466901-466925 of 2303271 (92131 Page(s) Totally)
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