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Showing items 466926-466950 of 2303271 (92131 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T04:55:28Z |
Hole effective mass in strained Si1-xCx alloys
|
Chang, S.T.; Liu, C.W.; CHEE-WEE LIU; Lin, C.Y.; Lin, C.Y.;Chang, S.T.;Liu, C.W. |
| 國立交通大學 |
2014-12-08T15:11:49Z |
Hole Effective Masses as a Booster of Self-Consistent Six-Band k . p Simulation in Inversion Layers of pMOSFETs
|
Chen, Ming-Jer; Lee, Chien-Chih; Cheng, Kuan-Hao |
| 國立臺灣大學 |
1997 |
Hole effective masses in relaxed Si1 - xCx and Si1 - yGey alloys
|
Lin, C. Y.; Liu, C. W. |
| 臺大學術典藏 |
2018-09-10T06:31:22Z |
Hole effective masses in relaxed Si1-xCx and Si1-yGey alloys
|
Lin, C.Y.; Liu, C.W.; CHEE-WEE LIU |
| 國立成功大學 |
2007-04-16 |
Hole escape processes detrimental to photoluminescence efficiency in a blue InGaN multiple-quantum-well diode under reverse bias conditions
|
Inoue, T.; Fujiwara, K.; Sheu, Jinn-Kong |
| 修平科技大學 |
2005 |
Hole Flanging with Multi-Action Extrusion(孔凸緣複動化擠伸成形)
|
林恆勝;吳家宏 |
| 國立交通大學 |
2017-04-21T06:49:23Z |
Hole g-Factor Anisotropies in Individual InAs Quantum Rings
|
Kaji, R.; Tominaga, T.; Wu, Y. -N.; Wu, M. -F.; Cheng, S. -J.; Adachi, S. |
| 國立交通大學 |
2014-12-08T15:38:13Z |
Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer
|
Wang, C. H.; Ke, C. C.; Lee, C. Y.; Chang, S. P.; Chang, W. T.; Li, J. C.; Li, Z. Y.; Yang, H. C.; Kuo, H. C.; Lu, T. C.; Wang, S. C. |
| 國立交通大學 |
2014-12-08T15:31:58Z |
Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
|
Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chen, Jenn-Fang; Su, Yan-Kuin |
| 國立成功大學 |
2013-08 |
Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
|
Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chen, Jenn-Fang; Su, Yan-Kuin |
| 國立交通大學 |
2014-12-08T15:35:07Z |
Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer
|
Lin, Bing-Cheng; Chen, Kuo-Ju; Wang, Chao-Hsun; Chiu, Ching-Hsueh; Lan, Yu-Pin; Lin, Chien-Chung; Lee, Po-Tsung; Shih, Min-Hsiung; Kuo, Yen-Kuang; Kuo, Hao-Chung |
| 國立交通大學 |
2014-12-08T15:29:53Z |
Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric
|
Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung |
| 國立成功大學 |
2013-02-18 |
Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric
|
Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung |
| 淡江大學 |
1997-12 |
Hole localization in Pr-doped RBa2Cu3O7−y systems
|
Kao, H.-C. I.; Yu, F. C.; Guan, W. |
| 國立臺灣海洋大學 |
2007-12-11 |
Hole Mobilities of 2,7- and 2,2'-Disubstituted 9,9'-Spirobifluorene-Based Triaryldiamines and Their Application as Hole Transport Materials in OLEDs
|
Yuan-Li Liao;Wen-Yi Hung;Tei-Hung Hou;Chi-Yen Lin;Ken-Tsung Wong |
| 臺大學術典藏 |
2018-09-10T06:28:01Z |
Hole mobilities of 2,7- And 2,2-disubstituted 9,9′-spirobifluorene- based triaryldiamines and their application as hole transport materials in OLEDs
|
Liao, Y.-L.; Hung, W.-Y.; Hou, T.-H.; Lin, C.-Y.; Wong, K.-T.; KEN-TSUNG WONG |
| 國立臺灣海洋大學 |
2007-12-15 |
Hole mobilities of 2,7- and 2,2’-Disubstituted 9,9’-Spirobifluorene-based Triaryldiamines and Their Applications as Hole Transporting Material
|
洪文誼; Wen-Yi Hung |
| 臺大學術典藏 |
2007 |
Hole Mobilities of 2,7- and 2,2′-Disubstituted 9,9′-Spirobifluorene-Based Triaryldiamines and Their Application as Hole Transport Materials in OLEDs
|
Hou, Tei-Hung; Lin, Chi-Yen; Wong, Ken-Tsung; Hung, Wen-Yi; Liao, Yuan-Li; Liao, Yuan-Li; Hung, Wen-Yi; Hou, Tei-Hung; Lin, Chi-Yen; Wong, Ken-Tsung |
| 國立臺灣大學 |
2007 |
Hole Mobilities of 2,7- and 2,2′-Disubstituted 9,9′-Spirobifluorene-Based Triaryldiamines and Their Application as Hole Transport Materials in OLEDs
|
Liao, Yuan-Li; Hung, Wen-Yi; Hou, Tei-Hung; Lin, Chi-Yen; Wong, Ken-Tsung |
| 國立臺灣海洋大學 |
2009-02-01 |
Hole Mobilities of Thermally Polymerized Triaryldiamine Derivatives and Their Application as Hole Transport Materials in Organic Light-Emitting Diodes (OLEDs)
|
Chi-Yen Lin;You-Ming Chen;Hsiao-Fan Chen;Fu-Chuan Fang;Yu-Cheng Lin;Wen-Yi Hung;Ken-Tsung Wong;Raymond C. Kwong;Sean C. Xia |
| 國立臺灣大學 |
2009 |
Hole mobilities of thermally polymerized triaryldiamine derivatives and their application as hole-transport materials in organic light-emitting diodes (OLEDs)
|
Lin, Chi-Yen; Chen, You-Ming; Chen, Hsiao-Fan; Fang, Fu-Chuan; Lin, Yu-Cheng; Hung, Wen-Yi; Wong, Ken-Tsung; Kwong, Raymond C.; Xia, Sean C. |
| 臺大學術典藏 |
2018-09-10T07:33:57Z |
Hole mobilities of thermally polymerized triaryldiamine derivatives and their application as hole-transport materials in organic light-emitting diodes (OLEDs)
|
Lin, C.-Y.; Chen, Y.-M.; Chen, H.-F.; Fang, F.-C.; Lin, Y.-C.; Hung, W.-Y.; Wong, K.-T.; Kwong, R.C.; Xia, S.C.; Lin, C.-Y.; Chen, Y.-M.; Chen, H.-F.; Fang, F.-C.; Lin, Y.-C.; Hung, W.-Y.; Wong, K.-T.; Kwong, R.C.; Xia, S.C.; KEN-TSUNG WONG |
| 臺大學術典藏 |
2022-02-21T23:30:52Z |
Hole mobility behavior in Al-gradient polarization-induced p-type AlGaN grown on GaN template
|
Chen, Chung Chi; Huang, Ting Chun; Lin, Yu Wei; Lin, Yu Ren; Wu, Ping Hsiu; Liou, Ping Wei; Hsieh, Hao Yu; Huang, Yang Yi; Yang, Shaobo; YUH-RENN WU; Yang, C. C. |
| 臺大學術典藏 |
2018-09-10T09:19:11Z |
Hole mobility boost of Ge p-MOSFETs by composite uniaxial stress and biaxial strain
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Lan, H.-S.; Chen, Y.-T.; Lin, J.-Y.; Liu, C.W.; CHIH-WEN LIU |
| 國立成功大學 |
2014-12 |
Hole Mobility Enhancement and p-doping in Monolayer WSe2 by Gold Decoration
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Chen, Chang-Hsiao; Wu, Chun-Lan; Pu, Jiang; Chiu, Ming-Hui; Kumar, Pushpendra; Takenobu, Taishi; Li, Lain-Jong |
Showing items 466926-466950 of 2303271 (92131 Page(s) Totally)
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