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Institution	Date	Title	Author
義守大學	2010-07	GaAs HBT異質接面雙極性電晶體VBIC大訊號模型建立	林琪鈞; Chi-Chun Lin
國立成功大學	1994	GaAs High Speed Devices	張俊彥; F. Kai
國立交通大學	2014-12-16T08:15:19Z	GaAs high-speed devices : physics, technology, and circuit applications	Chang, C Y
國立成功大學	2002-09	GaAs metal-oxide-semiconductor field effect transistors fabricated with low-temperature liquid-phase-deposited SiO2	Huang, Chien-Jung; Ya, Zhen-Song; Horng, Jui-Hong; Houng, Mau-Phon; Wang, Yeong-Her
臺大學術典藏	2018-09-10T04:31:35Z	GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition	MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL
臺大學術典藏	2021-07-26T09:44:17Z	GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 – In comparison with atomic layer deposited Al2O3	Wan H.W;Lin K.Y;Cheng C.K;Su Y.K;Lee W.C;Hsu C.H;Pi T.W;Kwo J;Hong M.; Wan H.W; Lin K.Y; Cheng C.K; Su Y.K; Lee W.C; Hsu C.H; Pi T.W; Kwo J; Hong M.; CHIA-KUEN CHENG
臺大學術典藏	2019-12-27T07:49:14Z	GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 ??In comparison with atomic layer deposited Al2O3	Wan, H.W.;Lin, K.Y.;Cheng, C.K.;Su, Y.K.;Lee, W.C.;Hsu, C.H.;Pi, T.W.;Kwo, J.;Hong, M.; Wan, H.W.; Lin, K.Y.; Cheng, C.K.; Su, Y.K.; Lee, W.C.; Hsu, C.H.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG
國立臺灣大學	2000	GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer	Lee, Ching-Ting; Shyu, Kuo-Chuan; Lin, Iang-Jeng; Lin, Hao-Hsiung
國立交通大學	2014-12-08T15:41:41Z	GaAs metal-semiconductor-metal photodetectors with low dark current and high responsivity at 850 nm	Lin, SD; Lee, CP
國立高雄師範大學	1998-08	GaAs MMIC被動元件與MESFET偏壓電路之研製	王瑞祿; Ruey-Lue Wang
臺大學術典藏	2002	GaAs monolithic 1.5 to 2.8 GHz tunable ring oscillator withaccurate quadrature outputs	Wu, Wen-Chieh; Lin, Hao-Hsiung; Wu, Wen-Chieh; Lin, Hao-Hsiung
國立臺灣大學	2002	GaAs monolithic 1.5 to 2.8 GHz tunable ring oscillator withaccurate quadrature outputs	Wu, Wen-Chieh; Lin, Hao-Hsiung
臺大學術典藏	2018-09-10T04:14:55Z	GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs	W. C. Wu,; H. Wang,; H. H. Lin,; HAO-HSIUNG LIN
國立成功大學	2005-07	GaAs MOS capacitors with photo-CVD SiO2 insulator layers	Liu, C. H.; Lin, T. K.; Chang, Shoou-Jinn
臺大學術典藏	2018-09-10T07:01:18Z	GaAs MOSFET using MBE-grown Ga 2 O 3 (Gd 2 O 3) as gate oxide	Kim, S-J; Park, J-W; Hong, M; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:57Z	GaAs MOSFET using MBE-grown Ga 2 O 3 (Gd 2 O 3 ) as gate oxide	Kim, S.-J.; Park, J.-W.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:35Z	GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition	Ye, PD;Wilk, GD;Kwo, J;Yang, BAYB;Gossmann, H-JL;Frei, MAFM;Chu, SNG;Mannaerts, JP;Sergent, MASM;Hong, MAHM;others; Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:51Z	GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition	Ye, P.D.;Wilk, G.D.;Kwo, J.;Yang, B.;Gossmann, H.-J.L.;Frei, M.;Chu, S.N.G.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.K.;Bude, J.; Ye, P.D.; Wilk, G.D.; Kwo, J.; Yang, B.; Gossmann, H.-J.L.; Frei, M.; Chu, S.N.G.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG
國立成功大學	1999-01	GaAs MOSFET's fabrication with a selective liquid phase oxidized gate	Wu, Jau-Yi; Wang, Hwei-Heng; Wang, Yeong-Her; Houng, Mau-Phon
臺大學術典藏	2018-09-10T03:28:32Z	GaAs MOSFET-Achievements and Challenges M. Hong, YC Wang, F. Ren (,), JP Mannaerts, J. Kwo, AR Kortan, JN Baillargeon, and AY Cho Bell Laboratories, Lucent Technologies, Murray Hill, NJ	Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T03:46:44Z	GaAs MOSFET-Materials Physics and Devices	Hong, M;Kwo, J;Kortan, AR;Mannaerts, JP;Wang, YC;Lay, TS; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wang, YC; Lay, TS; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:01:13Z	GaAs MOSFETs using Ga 2 O 3 (Gd 2 O 3) as gate dielectric	Hong, Minghwei; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:14:22Z	GaAs nanowire/PEDOT: PSS hybrid solar cells	Chao, J.-J.;Shiu, S.-C.;Lin, C.-F.; Chao, J.-J.; Shiu, S.-C.; Lin, C.-F.; CHING-FUH LIN
臺大學術典藏	2018-09-10T08:14:22Z	GaAs nanowire/PEDOT:PSS hybrid solar cells	Chao, J.-J.;Shiu, S.-C.;Lin, C.-F.; Chao, J.-J.; Shiu, S.-C.; Lin, C.-F.; CHING-FUH LIN
臺大學術典藏	2018-09-10T08:14:22Z	GaAs nanowire/PEDOT:PSS hybrid solar cells: Morphological and performance characterization	Chao, J.-J.;Shiu, S.-C.;Lin, C.-F.; Chao, J.-J.; Shiu, S.-C.; Lin, C.-F.; CHING-FUH LIN
臺大學術典藏	2018-09-10T08:42:04Z	GaAs nanowire/PEDOT:PSS hybrid solar cells: The relationship between nanowire morphology and device performance	Chao, J.-J.;Shiu, S.-C.;Hung, S.-C.;Lin, C.-F.; Chao, J.-J.; Shiu, S.-C.; Hung, S.-C.; Lin, C.-F.; CHING-FUH LIN
臺大學術典藏	2018-09-10T08:14:22Z	GaAs nanowire/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) hybrid solar cells	Chao, J.-J.;Shiu, S.-C.;Hung, S.-C.;Lin, C.-F.; Chao, J.-J.; Shiu, S.-C.; Hung, S.-C.; Lin, C.-F.; CHING-FUH LIN
臺大學術典藏	2018-09-10T09:22:03Z	GaAs nanowire/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) hybrid solar cells with incorporating electron blocking poly(3-hexylthiophene) layer	Chao, J.-J.; Shiu, S.-C.; Lin, C.-F.; CHING-FUH LIN
國立高雄師範大學	1992	GaAs Negative Differential Resistance Devices	Ruey-Lue Wang;Y. K. Su;H. H. Tsai; 王瑞祿
元智大學	2006-08	GaAs pHEMT characterization for OFDM power amplifier application	黃建彰; 李菘茂; 陳冠宇
元智大學	2005-08	GaAs pHEMT characterization for OFDM power amplifier application	黃建彰; 李菘茂; 陳冠宇
元智大學	2005-08	GaAs pHEMT characterization for OFDM power amplifier application	黃建彰; 李菘茂; 陳冠宇
義守大學	2011	GaAs pHEMT射頻切換開關的特性分析	李威儂; Wei-Nung Li
國立交通大學	2015-07-21T08:28:30Z	GaAs Polariton Interference in Magnetic Field: Oblique Incident Ellipsometry Measurement	Su, Sheng-Kai; Voskoboynikov, Oleksandr; Li, Liang-Chen; Suen, Yuen-Wuu; Lee, Chien-Ping
元智大學	2006-09	GaAs power pHEMT characterization for extracting nonlinear parameters of drain current by harmonic measurement	陳冠宇; 黃建彰
元智大學	2006-09	GaAs power pHEMT characterization for extracting nonlinear parameters of drain current by harmonic measurement	陳冠宇; 黃建彰
臺大學術典藏	2018-09-10T05:56:11Z	GaAs surface passivation using in-situ oxide deposition	Passlack, M;Hong, M;Opila, RL;Mannaerts, JP;Kwo, JR; Passlack, M; Hong, M; Opila, RL; Mannaerts, JP; Kwo, JR; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:32Z	GaAs surface reconstruction obtained using a dry process	Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG
國立高雄師範大學	1995	GaAs tristep low-low doping channel field effect transistor	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu;Wen-Shiung Lour;Yuan-Tzu Liu;Rong-Chau Liu; 蔡榮輝
中州科技大學	2012-12	GaAs 發光二極體元件的工作特性模擬分析	姚凱瀚, 陳奕豪,徐守棟
國立成功大學	2002	GaAs(N11)A/B 基板上成長之InGaAs 量子點其光學性質,壓電效應,表層厚度與空間分析之研究(2/2)	田興龍
國立臺灣大學	1993	GaAs-AlxGa1-xAs系統電子及電網Subband Energy之度量	張顏暉; Chang, Yuan-Huei
臺大學術典藏	2018-09-10T07:02:54Z	GaAs-based bipolar cascade light-emitting-diodes and superluminescent- diodes at the 1.04-μm wavelength regime	Guol, S.-H. and Wang Jr., H. and Wu, Y.-H. and Lin, W. and Yang, Y.-J. and Sun, C.-K. and Pan, C.-L. and Shi, J.-W.; CHI-KUANG SUN
臺大學術典藏	2018-09-10T03:29:19Z	GaAs-based long-wavelength traveling-wave photodetector	Shi, Jin-Wei; Sun, Chi-Kuang; Yang, Ying-Jay; Chiu, Yi-Jen; Bowers, John E.; CHI-KUANG SUN
臺大學術典藏	2018-09-10T03:51:07Z	GaAs-based long-wavelength traveling-wave photodetector	Y. J. Yang,; J. E. Bowers; YING-JAY YANG; J.-W. Shi; K.-G. Gan; Y.-J. Chiu; C.-K. Sun
臺大學術典藏	2019-12-27T07:49:50Z	GaAs-based metal-oxide semiconductor field-effect transistors with Al 2 O 3 gate dielectrics grown by atomic layer deposition	Ye, P.D.; Wilk, G.D.; Yang, B.; Kwo, J.; Gossmann, H.-J.L.; Frei, M.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:51:58Z	GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition	Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T04:31:33Z	GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition	Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG
南台科技大學	2021-11	GaAs-Based p-i-n Narrow Bandpass 850 nm IR Photodetector With a p-AlGaAs Filter Layer	Chun-Kai Wang;Yu-Zung Chiou;Yi-Lo Huang
臺大學術典藏	2018-09-10T07:35:54Z	GaAs-based transverse junction superluminescent diode at 1.1um wavelength region	Guol, S.-H.;Chou, M.-G.;Wang, J.-H.;Yang, Y.-J.;Sun, C.-K.;Shi, J.-W.; Guol, S.-H.; Chou, M.-G.; Wang, J.-H.; Yang, Y.-J.; Sun, C.-K.; Shi, J.-W.; CHI-KUANG SUN

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