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顯示項目 443536-443585 / 2348487 (共46970頁)
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| 國立臺灣大學 |
1999 |
Ga0.51In0.49P/InxGa1 – xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy
|
Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen |
| 國立暨南國際大學 |
2003 |
Ga0.51In0.49P/InxGa1-xAs/GaAs doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs)
|
陳志成?; Chen, CC |
| 國立暨南國際大學 |
2003 |
Ga0.51In0.49P/InxGa1-xAs/GaAs doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs)
|
林佑昇?; Lin, YS |
| 國立臺灣大學 |
2003 |
Ga0.51In0.49P/InxGa1-xAs/GaAs doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs)
|
Lin, Yo-Sheng; Chen, Chih-Chen; Lu, Shey-Shi |
| 臺大學術典藏 |
1999-02 |
Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy
|
Chang, Pei-Zen; Lu, Shey-Shi; Lin, Yo-Sheng; Lin, Yo-Sheng;Lu, Shey-Shi;Chang, Pei-Zen |
| 國立臺灣大學 |
1999-02 |
Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy
|
Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen |
| 臺大學術典藏 |
2018-09-10T07:37:07Z |
Ga0.51In0.49P/InxGa1?xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy
|
Chang, P.-Z.; Lin, Y.-S.; Lu, S.-S.; Lu, S.-S. |
| 國立交通大學 |
2014-12-08T15:45:20Z |
Ga0.5In0.5P barrier layer for wet oxidation of AlAs
|
Lee, SC; Lee, WI |
| 臺大學術典藏 |
2018-09-10T14:54:10Z |
GA2 and GA20-oxidase expressions are associated with the meristem position in Streptocarpus rexii (Gesneriaceae)
|
Spada, A.; M?ller, M.; CHUN-NENG WANG; Wang, C.-N.; Nishii, K.;Ho, M.-J.;Chou, Y.-W.;Gabotti, D.;Wang, C.-N.;Spada, A.;M?ller, M.; Nishii, K.; Ho, M.-J.; Chou, Y.-W.; Gabotti, D. |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion
|
Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; Hong, M.; Kwo, J.; Cui, S.; Ma, T.P.; MINGHWEI HONG |
| 臺北醫學大學 |
2003-04 |
GA2002,SEE YOU IN TAIPEI
|
臺北醫學大學 |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
Ga203 films for electronic and optoelectronic ap
|
Passlack, M;Schubert, EF;Hobson, WS;Hong, M;Moriya, N;Chu, SNG;Konstadinidis, K;Mannaerts, JP;Schnoes, ML;Zydzik, GJ; Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:13Z |
Ga2O3 (Gd2O3) as a dielectric insulator for GaAs device applications
|
Lay, Tsong S; Hong, Minghwei; Mannaerts, JP; Liu, CT; Kwo, Jueinai R; Ren, Fan; Marcus, MA; Ng, KK; Chen, Young-Kai; Chou, Li-Jen; others; MINGHWEI HONG |
| 臺大學術典藏 |
1998 |
Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs
|
Hong, M; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices
|
Chu, LK;Lin, TD;Huang, ML;Chu, RL;Chang, CC;Kwo, J;Hong, M; Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:12Z |
Ga2O3 films for electronic and optoelectronic applications
|
Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
GA2O3 FILMS FOR INSULATOR/III-V SEMICONDUCTOR INTERFACES
|
Passlack, M;Hong, M;Schubert, EF;Mannaerts, JP;HOBSON, WS;MORIYA, N;LOPATA, J;ZYDZIK, GJ; Passlack, M; Hong, M; Schubert, EF; Mannaerts, JP; HOBSON, WS; MORIYA, N; LOPATA, J; ZYDZIK, GJ; MINGHWEI HONG |
| 國立成功大學 |
2014 |
Ga2O3 Films for Photoelectrochemical Hydrogen Generation
|
Chang, Shoou-Jinn; Wu, Ya-Ling; Weng, Wen-Yin; Lin, Yo-Hong; Hsieh, Wei-Kang; Sheu, Jinn-Kong; Hsu, Cheng-Liang |
| 國立成功大學 |
2013-06 |
Ga2O3 Nanowire Photodetector Prepared on SiO2/Si Template
|
Wu, Y. L.; Chang, Shoou-Jinn; Weng, W. Y.; Liu, C. H.; Tsai, T. Y.; Hsu, C. L.; Chen, K. C. |
| 臺大學術典藏 |
2019-12-27T07:49:36Z |
Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices
|
Chu, L.K.;Lin, T.D.;Huang, M.L.;Chu, R.L.;Chang, C.C.;Kwo, J.;Hong, M.; Chu, L.K.; Lin, T.D.; Huang, M.L.; Chu, R.L.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 元智大學 |
May-19 |
Ga2O3-based p-i-n solar blind deep ultraviolet photodetectors
|
李清庭; Jian, Li-Yi; Lee, Hsin-Ying |
| 國立成功大學 |
2019-05 |
Ga2O3-based p-i-n solar blind deep ultraviolet photodetectors
|
Jian;Li-Yi;Lee;Hsin-Ying;Lee;Ching-Ting |
| 國立成功大學 |
2020 |
Ga2O3-based solar-blind deep ultraviolet light-emitting diodes
|
Lin, C.-H.;Lee, C.-T. |
| 國立成功大學 |
2013-09 |
Ga2O3/AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector
|
Huang, Zheng-Da; Weng, Wen Yin; Chang, Shoou Jinn; Chiu, Chiu-Jung; Hsueh, Ting-Jen; Wu, San-Lein |
| 臺大學術典藏 |
2018-09-10T06:28:13Z |
Ga2O3/GaAs depletion mode MOSFET
|
Middleton, JR; Hsia, HK; Caruth, D; Moy, AM; Cheng, KY; Feng, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:25:19Z |
Ga2O3/GaN single nanowire MOSFET with cut-off frequency ~150GHz
|
Jeng-Wei Yu,;Chi-Kang Li,;Po-Chun Yeh,;Yuh-Renn Wu,;Lung-Han Peng,; Jeng-Wei Yu,; Chi-Kang Li,; Po-Chun Yeh,; Yuh-Renn Wu,; Lung-Han Peng,; LUNG-HAN PENG |
| 國立成功大學 |
2013-09-15 |
Ga2O3/GaN-Based Metal-Semiconductor-Metal Photodetectors Covered With Au Nanoparticles
|
Huang, Zheng-Da; Weng, Wen-Yin; Chang, Shoou-Jinn; Hua, Yuan-Fu; Chiu, Chiu-Jung; Tsai, Tsung-Ying |
| 南台科技大學 |
2022-11 |
Ga2O3/GaN-based solar-blind phototransistors fabricated using a thermal oxidation process performed on the GaN p-n junction layers
|
Ping-Feng Chi; Feng-Wu Lin; Ming-Lun Lee; Jinn-Kong Sheu |
| 國立成功大學 |
2023 |
Ga2O3/GaN-based solar-blind phototransistors fabricated using a thermal oxidation process performed on the GaN p-n junction layers
|
Chi, P.-F.;Lin, F.-W.;Lee, M.-L.;Sheu, J.-K. |
| 元培科技大學 |
2019 |
GA2oxs 基因AtGA2ox8 在矮牽牛(Mitchell Diploid)調控吉貝素之功能性研究
|
邱建志 |
| 國立臺灣科技大學 |
2020 |
Ga2Se3Defect Semiconductors: The Study of Direct Band Edge and Optical Properties
|
Ho, C.-H. |
| 國立臺灣大學 |
1978 |
GA3對於菊花生長與開花之影響
|
范若安 |
| 國立臺灣大學 |
1991-12 |
GA3濃度及處理時間對木瓜種子發芽促進之影響
|
曾美倉; Tseng, Mei-Tsang |
| 國立臺灣大學 |
1995-07 |
GA5 locus of Arabidopsis encodes a multifunctional gibberellin 20-oxidase: molecular cloning and functional expression.
|
Xu Y; Li L; Wu KQ; Peeters A; Gage D; Zeevaart J |
| 國立成功大學 |
2017 |
Ga@C-dots as an antibacterial agent for the eradication of Pseudomonas aeruginosa
|
Kumar;Bhooshan, Vijay;Natan;Michal;Jacobi;Gila;Porat;Ze'ev;Banin;Ehud;Gedanken;Aharon |
| 臺大學術典藏 |
2019-09-09T00:55:33Z |
GAA variants and phenotypes among 1,079 patients with Pompe disease: Data from the Pompe Registry
|
Llerena, Juan;YIN-HSIU CHIEN;Kishnani, Priya S.;Araujo, Roberto;Toscano, Antonio;Clemens, Paula R.;Maruti, Sonia S.;Periquet, Magali;Leslie, Nancy;Reuser, Arnold J.J.;Kimonis, Virginia E.;Sanson, Bernd Jan;Abbott, Mary Alice;van der Ploeg, Ans T.; van der Ploeg, Ans T.; Abbott, Mary Alice; Sanson, Bernd Jan; Kimonis, Virginia E.; Reuser, Arnold J.J.; Leslie, Nancy; Periquet, Magali; Maruti, Sonia S.; Clemens, Paula R.; Toscano, Antonio; Araujo, Roberto; Kishnani, Priya S.; YIN-HSIU CHIEN; Llerena, Juan |
| 臺大學術典藏 |
2020-12-24T06:16:18Z |
GAA variants and phenotypes among 1,079 patients with Pompe disease: Data from the Pompe Registry
|
Leslie N.; Kimonis V.E.; Clemens P.R.; Abbott M.-A.; Llerena J.; Jr.; YIN-HSIU CHIEN; van der Ploeg A.T.; Reuser A.J.J.; Maruti S.S.; Sanson B.-J.; Araujo R.; Periquet M.; Toscano A.; Kishnani P.S.; on behalf of the Pompe Registry Sites |
| 淡江大學 |
2005-03 |
GAA: A New Optimization Technique for Task Matching and Scheduling in HCSs
|
莊博任; Chuang, Po-jen; 魏家鑫; Wei, Chia-hsin; 邱育賢; Chiu, Yu-shian |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
|
Y. R. Lin,;Y. F. Lai,;C. P. Liu,;H. H. Lin,; Y. R. Lin,; Y. F. Lai,; C. P. Liu,; H. H. Lin,; HAO-HSIUNG LIN |
| 國立成功大學 |
2017-05 |
GAAFET Versus Pragmatic FinFET at the 5nm Si-Based CMOS Technology Node
|
Huang;Ya-Chi;Chiang;Meng-Hsueh;Wang;Shui-Jinn;Fossum;Jerry, G. |
| 國立高雄第一科技大學 |
1999.01 |
GAAP與SAP對產物保險會計處理上之影響
|
賴麗華;呂嘉盈 |
| 國立交通大學 |
2014-12-08T15:04:05Z |
GAAS BIDIRECTIONAL BISTABILITY SWITCH USING DOUBLE TRIANGULAR BARRIER STRUCTURES
|
YARN, KF; WANG, YH; CHANG, CY |
| 義守大學 |
2010-07 |
GaAs HBT異質接面雙極性電晶體VBIC大訊號模型建立
|
林琪鈞; Chi-Chun Lin |
| 國立成功大學 |
1994 |
GaAs High Speed Devices
|
張俊彥; F. Kai |
| 國立交通大學 |
2014-12-16T08:15:19Z |
GaAs high-speed devices : physics, technology, and circuit applications
|
Chang, C Y |
| 國立成功大學 |
2002-09 |
GaAs metal-oxide-semiconductor field effect transistors fabricated with low-temperature liquid-phase-deposited SiO2
|
Huang, Chien-Jung; Ya, Zhen-Song; Horng, Jui-Hong; Houng, Mau-Phon; Wang, Yeong-Her |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
|
MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL |
| 臺大學術典藏 |
2021-07-26T09:44:17Z |
GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 – In comparison with atomic layer deposited Al2O3
|
Wan H.W;Lin K.Y;Cheng C.K;Su Y.K;Lee W.C;Hsu C.H;Pi T.W;Kwo J;Hong M.; Wan H.W; Lin K.Y; Cheng C.K; Su Y.K; Lee W.C; Hsu C.H; Pi T.W; Kwo J; Hong M.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 ??In comparison with atomic layer deposited Al2O3
|
Wan, H.W.;Lin, K.Y.;Cheng, C.K.;Su, Y.K.;Lee, W.C.;Hsu, C.H.;Pi, T.W.;Kwo, J.;Hong, M.; Wan, H.W.; Lin, K.Y.; Cheng, C.K.; Su, Y.K.; Lee, W.C.; Hsu, C.H.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 國立臺灣大學 |
2000 |
GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer
|
Lee, Ching-Ting; Shyu, Kuo-Chuan; Lin, Iang-Jeng; Lin, Hao-Hsiung |
顯示項目 443536-443585 / 2348487 (共46970頁)
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每頁顯示[10|25|50]項目
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