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Institution Date Title Author
國立臺灣大學 1999 Ga0.51In0.49P/InxGa1 – xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen
國立暨南國際大學 2003 Ga0.51In0.49P/InxGa1-xAs/GaAs doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs) 陳志成?; Chen, CC
國立暨南國際大學 2003 Ga0.51In0.49P/InxGa1-xAs/GaAs doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs) 林佑昇?; Lin, YS
國立臺灣大學 2003 Ga0.51In0.49P/InxGa1-xAs/GaAs doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs) Lin, Yo-Sheng; Chen, Chih-Chen; Lu, Shey-Shi
臺大學術典藏 1999-02 Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy Chang, Pei-Zen; Lu, Shey-Shi; Lin, Yo-Sheng; Lin, Yo-Sheng;Lu, Shey-Shi;Chang, Pei-Zen
國立臺灣大學 1999-02 Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen
臺大學術典藏 2018-09-10T07:37:07Z Ga0.51In0.49P/InxGa1?xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy Chang, P.-Z.; Lin, Y.-S.; Lu, S.-S.; Lu, S.-S.
國立交通大學 2014-12-08T15:45:20Z Ga0.5In0.5P barrier layer for wet oxidation of AlAs Lee, SC; Lee, WI
臺大學術典藏 2018-09-10T14:54:10Z GA2 and GA20-oxidase expressions are associated with the meristem position in Streptocarpus rexii (Gesneriaceae) Spada, A.; M?ller, M.; CHUN-NENG WANG; Wang, C.-N.; Nishii, K.;Ho, M.-J.;Chou, Y.-W.;Gabotti, D.;Wang, C.-N.;Spada, A.;M?ller, M.; Nishii, K.; Ho, M.-J.; Chou, Y.-W.; Gabotti, D.
臺大學術典藏 2019-12-27T07:49:43Z Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; Hong, M.; Kwo, J.; Cui, S.; Ma, T.P.; MINGHWEI HONG
臺北醫學大學 2003-04 GA2002,SEE YOU IN TAIPEI 臺北醫學大學
臺大學術典藏 2018-09-10T05:21:10Z Ga203 films for electronic and optoelectronic ap Passlack, M;Schubert, EF;Hobson, WS;Hong, M;Moriya, N;Chu, SNG;Konstadinidis, K;Mannaerts, JP;Schnoes, ML;Zydzik, GJ; Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:13Z Ga2O3 (Gd2O3) as a dielectric insulator for GaAs device applications Lay, Tsong S; Hong, Minghwei; Mannaerts, JP; Liu, CT; Kwo, Jueinai R; Ren, Fan; Marcus, MA; Ng, KK; Chen, Young-Kai; Chou, Li-Jen; others; MINGHWEI HONG
臺大學術典藏 1998 Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs Hong, M; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:34:18Z Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices Chu, LK;Lin, TD;Huang, ML;Chu, RL;Chang, CC;Kwo, J;Hong, M; Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:21:12Z Ga2O3 films for electronic and optoelectronic applications Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:21:10Z GA2O3 FILMS FOR INSULATOR/III-V SEMICONDUCTOR INTERFACES Passlack, M;Hong, M;Schubert, EF;Mannaerts, JP;HOBSON, WS;MORIYA, N;LOPATA, J;ZYDZIK, GJ; Passlack, M; Hong, M; Schubert, EF; Mannaerts, JP; HOBSON, WS; MORIYA, N; LOPATA, J; ZYDZIK, GJ; MINGHWEI HONG
國立成功大學 2014 Ga2O3 Films for Photoelectrochemical Hydrogen Generation Chang, Shoou-Jinn; Wu, Ya-Ling; Weng, Wen-Yin; Lin, Yo-Hong; Hsieh, Wei-Kang; Sheu, Jinn-Kong; Hsu, Cheng-Liang
國立成功大學 2013-06 Ga2O3 Nanowire Photodetector Prepared on SiO2/Si Template Wu, Y. L.; Chang, Shoou-Jinn; Weng, W. Y.; Liu, C. H.; Tsai, T. Y.; Hsu, C. L.; Chen, K. C.
臺大學術典藏 2019-12-27T07:49:36Z Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices Chu, L.K.;Lin, T.D.;Huang, M.L.;Chu, R.L.;Chang, C.C.;Kwo, J.;Hong, M.; Chu, L.K.; Lin, T.D.; Huang, M.L.; Chu, R.L.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG
元智大學 May-19 Ga2O3-based p-i-n solar blind deep ultraviolet photodetectors 李清庭; Jian, Li-Yi; Lee, Hsin-Ying
國立成功大學 2019-05 Ga2O3-based p-i-n solar blind deep ultraviolet photodetectors Jian;Li-Yi;Lee;Hsin-Ying;Lee;Ching-Ting
國立成功大學 2020 Ga2O3-based solar-blind deep ultraviolet light-emitting diodes Lin, C.-H.;Lee, C.-T.
國立成功大學 2013-09 Ga2O3/AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector Huang, Zheng-Da; Weng, Wen Yin; Chang, Shoou Jinn; Chiu, Chiu-Jung; Hsueh, Ting-Jen; Wu, San-Lein
臺大學術典藏 2018-09-10T06:28:13Z Ga2O3/GaAs depletion mode MOSFET Middleton, JR; Hsia, HK; Caruth, D; Moy, AM; Cheng, KY; Feng, M; Hong, M; Mannaerts, JP; MINGHWEI HONG

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